is > BF 115 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Aligemein bis 100 MHz Applications: General up to 100 MHz Abmessungen in mm Dimensions in mm 254 Absolute Grenzdaten Absolute maximum ratings Kollektor-Basis-Sperrspannung UcBO Collector-base voltage Kollektor-Emitter-Sperrspannung UCEO Collector-emitter voltage Rg Stk, Re=1kQ Ucer Emitter-Basis-Sperrspannung VeBO Emitter-base voltage Kollektorstrom Io Collector current Basisstrom Ip Base current Gesamtverlustleistung Total power dissipation famb = 45C Prot Sperrschichttemperatur ti Junction temperature Lagerungstemperaturbereich 'stg Storage temperature range B 2/V.2. 499/0875 A1 AnschiuB ,,S mit Gehause verbunden Terminal S connected with case Normgehause Case 18 A4 DIN 41876 JEDEC TO 72 Gewicht - Weight max. 0,59 50 Vv 30 Vv 50 Vv 5 Vv 30 mA 1 mA 145 mw 175 C -55 ... +175 C 181BF 115 UoER Vv Ig=2ma tamb 25C Rebrw, - 21k E Ew, wCe Warmewiderstand Min. Thermal resistance Sperrschicht-Umgebung Rina Junction ambient Statische Kenngr6Ben DC characteristics tamb = 28C, falls nicht anders angegeben unless otherwise specitied Kollektorreststrom Collector cut-off current Ucp = 20V, lamb = 175C lopo Kollektor-Basis-Ourchbruchspannung Collector-base breakdown voltage Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage 'p ) F = 0,01, tp = 0,3 ms 182 75919 Tfk Typ. Max. g00 C/W 0,5 HABF 115 Emitter-Basis-Durchbruchspannung Emitter-base breakdown voltage Te = 10 pA Basis-Emitter-Spannung Base-emitter voltage UcE = 10V, Io = 1mA UcE = 2 V, Io =20mA Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio UcE = 10V, Io = tmA UcE = 2V, Io =20mA Dynamische KenngrBen AC characteristics lamb = 25C Transitfrequenz Gain bandwidth product Uog = 10V, Jo =1mA, f = 100 MHz Ruckwirkungskapazitat Feedback capacitance Ug = 10V, Io = 1 mA, f = 0,45 MHz RauschmaB Noise figure Uop = 10V, Ip = 1 MA, Rg = 300 kQ, f = 200 kHz f = 1MHz Ucp = 10 V, J/g = 1 mA, Rg = 509, f= 1MHz UcB = 10V, Io =1mA, Rg = 100 Q, Jf = 100 MHz MischrauschmaB Noise figure for mixer Ucp = 10V, lo = 1mA, Rg = 1 kQ, f = 0,2 MHz Ugg = 10 V, Ig = 1 mA, Rg = 500 Q, f=1 MHz p . ) = 0,01, tp = 0,3 ms UBR)EBO UBE Ube ) AEE Mee) fT Cire Min. Typ. 5 650 700 48 40 230 0,65 1,5 1,2 3,5 4 3,5 2,5 Max. Vv 740 mv 1 Vv 167 MHz 0,8 pF dB dB dB dB dB dB 183BF 115 Vierpol KenngrdBen Two port characteristics lamb = 25C Emitterschaltung Common emitter configuration Ugg = 10V, ig = 1mA, f = 0,45 MHz KurzschluB-Eingangsadmittanz Short circuit input admittance KurzschluB-Rickwartssteilheit Short circuit reverse transfer admittance KurzschluB-Vorwirtssteilheit Short circuit forward transfer admittance KurzschluB-Ausgangsadmittanz Short circuit output admittance Basisschaltung Common base configuration 184 Ucg = 10V, Ig = 1 mA, f = 100 MHz KurzschluB-Eingangsadmittanz Short circuit input admittance KurzschluB-Riickwartssteilheit Short circuit reverse transfer admittance KurzschluB-Vorwartssteilheit Short circuit forward transfer admittance Kurzschlu8-Ausgangsadmittanz Short circuit output admittance Sie ie | Pre | ~Pre [> | Pte S0e oe 8ib ~ bip | rb | ~Prb | "1b | Pt Sob Min. Typ. 0,4 25 1,8 go 33 3,8 220 87 33 150 14 1,5 Max. mS pF pS mS ys pF ms pF ys mS uS pF25 mA 20 15 Ugg =2 10 a 200 400 600 LA L BF 115 72843) Th tamb * 25 C Ugg = 10V tamb = 25C 185BF 115 186 Ugg 210 Ig= TmA Gg * Geopt tamb = 25 C 0,5 10 MHz