BYW82...BYW86
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98 1 (4)
Document Number 86051
Silicon Mesa Rectifiers
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Controlled avalanche characteristics
D
Low reverse current
D
High surge current loading
D
Electrically equivalent diodes:
BYW82 – 1N5624 BYW83 – 1N5625
BYW84 – 1N5626 BYW85 – 1N5627
Applications
Rectifier, general purpose
94 9588
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Reverse voltage BYW82 VR=VRRM 200 V
g
=Repetitive peak reverse voltage BYW83 VR=VRRM 400 V
BYW84 VR=VRRM 600 V
BYW85 VR=VRRM 800 V
BYW86 VR=VRRM 1000 V
Peak forward surge current tp=10ms, half sinewave IFSM 100 A
Repetitive peak forward current IFRM 18 A
Average forward current Tamb
x
65
°
CIFAV 3 A
Pulse avalanche peak power tp=20
m
s, half sinewave,
Tj=175
°
CPR1000 W
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
I(BR)R=1A, Tj=175
°
C ER20 mJ
i2*t–rating i2*t 40 A2*s
Junction and storage
temperature range Tj=Tstg –65...+175
°
C
Maximum Thermal Resistance
Tj = 25
_
C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant RthJA 25 K/W
on PC board with spacing 37.5mm RthJA 70 K/W
BYW82...BYW86
Vishay Telefunken
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2 (4) Document Number 86051
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=3A VF1.0 V
Reverse current VR=VRRM IR0.1 1
m
A
VR=VRRM, Tj=100
°
C IR5 10
m
A
Breakdown voltage IR=100
m
A, tp/T=0.01, tp=0.3ms V(BR) 1600 V
Diode capacitance VR=0, f=0.47MHz CD65 100 pF
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A trr 2 4
m
s
y
IF=1A, di/dt=5A/
m
s, VR=50V trr 3 6
m
s
Reverse recovery charge IF=1A, di/dt=5A/
m
s Qrr 6 10
m
C
Characteristics (Tj = 25
_
C unless otherwise specified)
0 5 10 15 25
0
10
20
30
40
R – Therm. Resist. Junction / Ambient ( K/W )
thJA
l – Lead Length ( mm )
30
94 9563
20
ll
TL=constant
Figure 1. Max. Thermal Resistance vs. Lead Length
0
0
0.4
0.8
1.2
1.6
2.0
I – Average Forward Current ( A )
FAV
Tamb – Ambient Temperature ( °C )94 9565
40 80 120 160 200
VR=VRRM
f=1kHz
RthJA=70K/W
PCB
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
0
0
1
2
3
4
I – Average Forward Current ( A )
FAV
Tamb – Ambient Temperature ( °C )94 9564
40 80 120 160 200
VR=VRRM
f=1kHz
RthJA=25K/W
L=10mm
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
0 40 80 120 160
0.1
1
10
100
1000
Tj – Junction Temperature ( °C )
200
94 9566
m
I – Reverse Current ( A )
R
Scattering Limit
VR=VRRM
Figure 4. Reverse Current vs. Junction Temperature
BYW82...BYW86
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98 3 (4)
Document Number 86051
0 0.6 1.2 1.8 2.4
0.01
0.1
1
10
100
I – Forward Current ( A )
F
VF – Forward Voltage ( V )
3.0
94 9567
Tamb=25°C
Tamb=175°C
Scattering Limit
Figure 5. Max. Forward Current vs. Forward Voltage
0
20
40
60
80
0.1 1 10
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
100
94 9569
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
1
10
100
1000
Z – Thermal Resistance for Pulse Cond. (K/W)
thp
tp – Pulse Length ( s )94 9568 IFRM – Repetitive Peak
Forward Current ( A )
10–4 10–3 10–2 10–1 10010110–1 100101
tp/T=0.05
VRRM=1000V RthJA=70K/W
tp/T=0.5
tp/T=0.2
tp/T=0.1
tp/T=0.01
Tamb=25°C
45°C
70°C
100°C
60°C
tp/T=0.02
Figure 7. Thermal Response
Dimensions in mm
Cathode Identification ∅ 4.3 max.
∅ 1.35 max.
4.2 max.
Sintered Glass Case
SOD 64
Weight max. 1.0g technical drawings
according to DIN
specifications
94 9587
26 min. 26 min.
BYW82...BYW86
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600 Rev. 2, 24-Jun-98
4 (4) Document Number 86051
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
