2N3789 2N3791
2N3790 2N3792
SILICON
PNP POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3789, 2N3790,
2N3791, and 2N3792 are silicon PNP power transistors,
manufactured by the epitaxial planar process, designed
for medium speed switching and amplifier applications.
MARKING: FULL PART NUMBER
2N3789 2N3790
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N3791 2N3792 UNITS
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 10 A
Continuous Base Current IB 4.0 A
Power Dissipation PD 150 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 1.17 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N3789 2N3790
2N3791 2N3792
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICEV V
CE=Rated VCEO, VEB=1.5V - 1.0 - 1.0 mA
ICEV V
CE=Rated VCEO, VEB=1.5V, TC=150°C - 5.0 - 5.0 mA
IEBO V
EB=7.0V - 5.0 - 5.0 mA
BVCEO I
C=200mA 60 - 80 - V
VCE(SAT) I
C=4.0A, IB=400mA (2N3789, 2N3790) - 1.0 - 1.0 V
VCE(SAT) I
C=5.0A, IB=500mA (2N3791, 2N3792) - 1.0 - 1.0 V
VBE(ON) V
CE=2.0V, IC=5.0A (2N3789, 2N3790) - 2.0 - 2.0 V
VBE(ON) V
CE=2.0V, IC=5.0A (2N3791, 2N3792) - 1.8 - 1.8 V
VBE(ON) V
CE=4.0V, IC=10A - 4.0 - 4.0 V
hFE V
CE=2.0V, IC=1.0A (2N3789, 2N3790) 25 90 25 90
hFE V
CE=2.0V, IC=1.0A (2N3791, 2N3792) 50 180 50 180
hFE V
CE=2.0V, IC=3.0A (2N3789, 2N3790) 15 - 15 -
hFE V
CE=2.0V, IC=3.0A (2N3791, 2N3792) 30 - 30 -
fT V
CE=10V, IC=500mA, f=1.0MHz 4.0 - 4.0 - MHz
TO-3 CASE
R2 (31-July 2013)
www.centralsemi.com
2N3789 2N3791
2N3790 2N3792
SILICON
PNP POWER TRANSISTORS
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
TO-3 CASE - MECHANICAL OUTLINE
R2
www.centralsemi.com
R2 (31-July 2013)