ORIG A226 -~S2O0 SS) MOTOROLA MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 HIGH-CURRENT COMPLEMENTARY SILICON TRANSISTORS ... for use as output devices in complementary general purpose amplifier applications. @ High OC Current Gain hee = 1000 (Min) @ Ic = 25 Ade Curves to 100 A (Pulsed) hee = 400 (Min) @ Ic = 50 Adc Diode Protection to Rated Ic Monolithic Construction with Built-In Base-Emitter Shunt Resistor Junction Temperature to +200C 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR 60-120 VOLTS 300 WATTS MAXIMUM RATINGS MJ11028]MJ11030/MJ11032 Rating Symbol | MJ11029]MJ1 103 1] MJ1 1033 Une Collector-Emutter Voltage VcEO 60 90 120 Vde Collector-Base Voitage Ves 60 90 120 Vde Emitter-Base Voltage Veg 5 Vde Collector CurrentContinuous le 50 Adc Peak lom 100 Base CurrentContinuous tg 2 Ade Total Power Dissipation @ Te = 25C Pp 300 Watts Cerate above 25C @ Te = 100C 1.71 wiec Operating and Storage Junction Ty. Tstg -55 to +200 % Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Maximum Lead Temperature for Te 275 c Soldering Purposes far < 10 seconds Therma Resistance Junction to Case Resc 0 584 c FIGURE 1 DARLINGTON CIRCUIT SCHEMATIC Collector PNP MJ11029 MJ11031 MJ11033 Base Or Collector NPN MJ11028 Ms11030 { MJ11032 1 ' Base - 3 rc YT Le a 7 J. ak K SEATING o t PLANE STYLE1 PIN 1. BASE 2. EMITTER CASE. COLLECTOR CASE 197-01 (TO-3 Except Pin Orameter}MJ11023, MJ11030, MJ11032 NPN/ MJ11029, MJ11031, MJ11033 PNP ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted } } Characteristic | Symbol | Min | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) BYcEO Vde {ig = 100 mAdc, Ig = 0) MJ11028 MJ11029 60 - MJ11030 MJ11031 90 - MJ11032 MJ11033 120 - Coltector-Emitter Leakage Current IceR mAdc (Vcg = 60 Vde, Rgg = 1k ohm) MJ11028 MJ11029 - 2 (Voge = 90 Vac, Rgge = 1 k ohm) MJ11030 MJ11031 - 2 (Voge = 120 Vie, Age = 1 k ohm) MJ11032 MJ11033 - 2 (Vog = 60 Vde, Age 21 k ohm, Te = 150C} MJ11028 MJ11029 - 10 Vee = 90 Vde, Age +1 k ohm, Te * 150C) MJ11030 MJ11031 - 10 (Voge = 120 Vde, Rgg = 1 k ohm, To = 150C) MJ11032_MJ11033 - 10 Emutter Cutoff Current lepo - 5 mAdc (Vge = 5 Vde, Ic = 0) Collector-Emitter Leakage Current ICEO - 2 mAde (Voce = 50 Vde, ig = 0} ON CHARACTERISTICS (1) OC Current Gain hee - (ig = 25 Ade, Voce 7 5 Vde) Tk 18k (Ic * 50 Adc, Vege = 5 Vdc) 400 - Collector-Emitter Saturation Voltage VCE(sat) Vde (Ic = 25 Adc, Ig = 250 mAdc} - 25 (I = 50 Ade, tg = 500 mAdc) - 3.5 Base-Emitter Saturation Voltage VBE lsat) Vde (I = 25 Ade, ig = 200 mAdc) - 3.0 (I = 50 Adc, Ig = 300 mAdc) - 45 (1} Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. - FIGURE 2 DC SAFE OPERATING AREA 100 50 5 = 20 Zz 10 ad = 2 sr Banding Wire Limited e F - Thermally Limited @ Te = 25C = zr Second Breakdown Limited 41 al 3 as MJ11028, 29 2 311030, 31 Q2 MJ11 33 Qt 0.2 0.5 i 2 5 10 20 50 100 Veg. COLLECTOR EMITTER VOLTAGE (VOLTS) FIGURE 3 DC CURRENT GAIN 100 & 50k Veet 5 Ty 2 25C z ak S 10k - cS Sk ee m4 3 2 2k w ik 311029, MJ11031, MJ11033 PNP = 500 311028, MJ31030, MJ11032 NPN 200 100 1 2 5 10 20 sa tc, COLLECTOR CURRENT {AMP} 200 3-938 Vee. COLLECTOR EMITTER VOLTAGE (VOLTS) 2 There are two limitations on the power-handling ability of a transistor: average junction temperature and second break- down, Safe operating area curves indicate IG-Vcg limits of the transistor that must be observed for reliable operation, :.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 1s based on Tyipk) = 200C. Tr ss variable depending on conditions At high case temperatures, thermal Jimitations will reduce the power that can be handied to values less than the limitations imposed by second break- down. FIGURE 4 ON VOLTAGE MJ11029, MJ11031, MJ11033 PNP MI11028, 311030, MJ11032 NPN Ty = 259C Icitg = 100 1 2 3 5 10 20 50 100 - Ic, COLLECTOR CURRENT (AMP)