MMBT4403
Document Number: DS30058 Rev. 11 - 2 1 of 6
www.diodes.com March 2012
© Diodes Incorporated
MMBT4403
40V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT4401)
Ideal for Medium Power Amplification and Switching
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
UL Flammability Rating 94V-0
Case material: molded Plastic “Green” Compound
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.008 grams (Approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT4403-7-F K2T 7 8 3,000
MMBT4403-13-F K2T 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes In corporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
SOT23
Device Symbol Top View
Pin-Out
K2T = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
C
E
B
K2T
YM
MMBT4403
Document Number: DS30058 Rev. 11 - 2 2 of 6
www.diodes.com March 2012
© Diodes Incorporated
MMBT4403
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -6.0 V
Collector Current - Continuous (Note 7) IC -600 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector Power Dissipation (Note 5) PD 310 mW
(Note 6) 350
Thermal Resistance, Junction to Ambient (Note 5) RθJA 403 °C/W
(Note 6) 357
Thermal Resistance, Junction to Leads (Note 7) RθJL 350 °C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C
Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
7. Thermal resistance from junctio n to solder-point (at the end of the collector lead).
0 255075100125150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
Ma x Pow e r Dissi p a ti o n (W )
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Therm al Imped an ce
D=0.5
D=0.2 D=0.1 Single Pulse
D=0.05
The rma l R esistan ce C / W )
Pu l se Width (s)
10m 100m 1 10 100 1k
0.1
1
10 Single Pulse. Tamb=25°C
Pulse Power Dissipation
Pu l se Width (s)
Max P owe r Dissip at i on (W)
MMBT4403
Document Number: DS30058 Rev. 11 - 2 3 of 6
www.diodes.com March 2012
© Diodes Incorporated
MMBT4403
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage BVCBO -40 V IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO -40 V IC = -10.0mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO -6.0 V IE = -100μA, IC = 0
Collector Cutoff Current ICEX -100 nA
VCE = -35V, VEB
(
OFF
)
= -0.4V
Base Cutoff Current IBL -100 nA
VCE = -35V, VEB
(
OFF
)
= -0.4V
ON CHARACTERISTICS (Note 8)
DC Current Gain hFE
30
60
100
100
20
300
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -150mA, VCE = -2.0V
IC = -500mA, VCE = -2.0V
Collector-Emitter Saturation Voltage VCE(sat) -0.40
-0.75 V IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage VBE(sat) -0.75
-0.95
-1.30 V IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 8.5 pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo 30 pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.5 15 kΩ VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 60 500
Output Admittance hoe 1.0 100 μS
Current Gain-Bandwidth Product fT 200 MHz VCE = -10V, IC = -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td 15 ns
VCC = -30V, IC = -150mA,
VBE(off) = -2.0V, IB1 = -15mA
Rise Time t
r
20 ns
Storage Time ts 225 ns
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
Fall Time tf 30 ns
Notes: 8. Short duration pulse test used to minimize self-heating effect.
MMBT4403
Document Number: DS30058 Rev. 11 - 2 4 of 6
www.diodes.com March 2012
© Diodes Incorporated
MMBT4403
Typical Electrical Characteristics
1
100
1,000
110
100 1,000
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
C
10
110
100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation V oltage
vs. Collector Current
C
0
0.1
0.2
0.3
0.4
0.5
T = 50°C
A
T = 25°C
A
T = 150°C
A
I
C
I
B
= 10
0.1 110 100
V , BASE -EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Figure 3 Typical Base-Emitter Turn-On V o ltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
V = 5V
CE
T = 150°C
A
0.2
0.3
0.4
0.5
0.9
0.8
0.7
0.6
1.0
1
10
100
0.1 1 10 100
C
A
P
A
C
I
T
AN
C
E (p
F
)
V,
Typical
R
REVERSE VO LTAGE (V)
Figure 4 Capacitance Characteristics
Cobo
Cibo
f = 1MHz
1
100
1,000
110 100
f,
G
AI
N
-BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Figure 5 Typical Gain-Bandwidth Product vs. Collector Current
C
10
V = 5V
CE
I ,BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
0.001 0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 110 100
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
MMBT4403
Document Number: DS30058 Rev. 11 - 2 5 of 6
www.diodes.com March 2012
© Diodes Incorporated
MMBT4403
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
MMBT4403
Document Number: DS30058 Rev. 11 - 2 6 of 6
www.diodes.com March 2012
© Diodes Incorporated
MMBT4403
IMPORTANT NOTICE
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