MMBT4403 40V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data * * * * * * * * * * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401) Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT23 Case: SOT23 UL Flammability Rating 94V-0 Case material: molded Plastic "Green" Compound Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.008 grams (Approximate) C B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Product MMBT4403-7-F MMBT4403-13-F Notes: Marking K2T K2T Reel size (inches) 7 13 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com Marking Information Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 MMBT4403 Document Number: DS30058 Rev. 11 - 2 Mar 3 YM K2T K2T = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2012 Z Apr 4 2013 A May 5 Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D March 2012 (c) Diodes Incorporated MMBT4403 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 7) Symbol VCBO VCEO VEBO IC Value -40 -40 -6.0 -600 Unit V V V mA Value 310 350 403 357 350 -55 to +150 Unit Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 7) Collector Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Notes: PD RJA RJL TJ,TSTG mW C/W C/W C 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 400 Thermal Resistance (C/W) Max Power Dissipation (W) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Temperature (C) 350 300 250 200 D=0.5 150 100 D=0.1 Single Pulse D=0.2 50 0 100 D=0.05 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 10 Single Pulse. T amb=25C 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation MMBT4403 Document Number: DS30058 Rev. 11 - 2 2 of 6 www.diodes.com March 2012 (c) Diodes Incorporated MMBT4403 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 8) Symbol Min Max Unit BVCBO BVCEO BVEBO ICEX IBL -40 -40 -6.0 -100 -100 V V V nA nA hFE 30 60 100 100 20 300 Collector-Emitter Saturation Voltage VCE(sat) -0.40 -0.75 V Base-Emitter Saturation Voltage VBE(sat) -0.75 -0.95 -1.30 V Cobo Cibo hie hre hfe hoe 1.5 0.1 60 1.0 8.5 30 15 8.0 500 100 pF pF k -4 x 10 S Current Gain-Bandwidth Product fT 200 MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf 15 20 225 30 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Notes: Test Condition IC = -100A, IE = 0 IC = -10.0mA, IB = 0 IE = -100A, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100A, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA 8. Short duration pulse test used to minimize self-heating effect. MMBT4403 Document Number: DS30058 Rev. 11 - 2 3 of 6 www.diodes.com March 2012 (c) Diodes Incorporated MMBT4403 Typical Electrical Characteristics 0.5 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 10 0.3 T A = 150C 0.1 0 TA = 25C 10 1,000 100 IC, COLLECTOR CURRENT (mA) Figure 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Figure 1 Typical DC Current Gain vs. Collector Current 1 100 1.0 VCE = 5V f = 1MHz 0.9 0.8 CAPACITANCE (pF) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) T A = 50C 0.2 1 TA = -50C 0.7 0.6 TA = 25C 0.5 Cibo 10 Cobo 0.4 TA = 150C 0.3 1 0.1 0.2 0.1 10 100 1 IC, COLLECTOR CURRENT (mA) Figure 3 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1 10 100 VR, REVERSE VOLTAGE (V) Figure 4 Typical Capacitance Characteristics 1.6 1,000 VCE, COLLECTOR-EMITTER VOLTAGE (V) VCE = 5V fT, GAIN-BANDWIDTH PRODUCT (MHz) IC IB = 10 0.4 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 5 Typical Gain-Bandwidth Product vs. Collector Current MMBT4403 Document Number: DS30058 Rev. 11 - 2 4 of 6 www.diodes.com 1.4 1.2 IC = 10mA IC = 1mA IC = 100mA I = 300mA C IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 1 0.1 10 100 IB,BASE CURRENT (mA) Figure 6 Typical Collector Saturation Region 0.01 March 2012 (c) Diodes Incorporated MMBT4403 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A B C H K M K1 D J F L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X MMBT4403 Document Number: DS30058 Rev. 11 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 5 of 6 www.diodes.com March 2012 (c) Diodes Incorporated MMBT4403 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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