2N5154L
Silicon NPN Transisto
Data Sheet
Copyright© 2006 Semicoa
Rev. D-2b 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100 mA 80 Volts
Collector-Emitter Cutoff Current ICEO VCE = 40 Volts 50 µA
Collector-Emitter Cutoff Current ICEX VCE = 60 Volts, VEB = 2 Volts,
TA = 150°C 100
µA
Collector-Emitter Cutoff Current ICES1
ICES2
VCE = 60 Volts
VCE = 100 Volts
1
1 µA
mA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 4 Volts
VEB = 5.5 Volts
1
1 µA
mA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 50 mA, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
TA = -55°C
50
70
40
25
200
Base-Emitter Voltage VBE VCE = 5 Volts, IC = 2.5 A 1.45 Volts
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
1.45
2.20 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
0.75
1.50 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 500 mA,
f = 10 MHz 7
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 5 Volts, IC = 100 mA,
f = 1 kHz 50
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
f = 1 MHz 250
pF
Switching Characteristics
Storage Time
Fall Time
Saturated Turn-On Time
Saturated Turn-Off Time
ts
tf
tON
tOFF
IC = 5 A, IB1=IB2 = 500 mA,
VBEoff = 3.7 Volts, RL = 6 Ω
1.4
0.5
0.5
1.5
µs