AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Dynamic dv/dt Rating Logic Level 150C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET Package Type AUIRF7304Q SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS -20V RDS(on) max. ID 0.090 -4.3A Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number AUIRF7304Q SO-8 AUIRF7304Q G Gate Standard Pack Form Quantity Tape and Reel 4000 D Drain S Source Orderable Part Number AUIRF7304QTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TA = 25C Continuous Drain Current, VGS @ -4.5V -4.7 ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation -4.3 -3.4 -17 2.0 VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Symbol RJA Parameter Junction-to-Ambient Units A W 0.016 12 -5.0 -55 to + 150 W/C V V/ns C Typ. Max. Units --- 62.5 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-16 AUIRF7304Q Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions -20 --- --- V VGS = 0V, ID = -250A --- -0.012 --- V/C Reference to 25C, ID = -1mA --- --- 0.090 VGS = -4.5V, ID = -2.2A --- --- 0.140 VGS = -2.7V, ID = -1.8A -0.70 --- -1.5 V VDS = VGS, ID = -250A 4.0 --- --- S VDS = -16V, ID = -2.2A --- --- -1.0 VDS = - 16V, VGS = 0V A --- --- -25 VDS = -16V,VGS = 0V,TJ =125C --- --- -100 VGS = -12V nA --- --- 100 VGS = 12V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- --- --- --- 8.4 26 51 33 22 3.3 9.0 --- --- --- --- LD Internal Drain Inductance --- 4.0 --- LS Internal Source Inductance --- 6.0 --- --- --- --- 610 310 170 --- --- --- Min. Typ. Max. Units --- --- -2.5 --- --- -17 --- --- --- --- 56 71 -1.0 84 110 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = -2.2A nC VDS = -16V VGS = -4.5V, See Fig.6 & 12 VDD = -10V ID = -2.2A ns RG = 6.0 RD = 4.5See Fig.10 Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V pF VDS = -15V = 1.0MHz, See Fig.5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = -1.8A,VGS = 0V ns TJ = 25C ,IF = -2.2A, nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) ISD -2.2A, di/dt 50A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board , t sec. 2 2015-11-16 AUIRF7304Q 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V -ID , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 1 -1.5V 20s PULSE WIDTH TJ = 25C A 0.1 0.01 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP TOP 0.1 1 10 10 1 -1.5V 20s PULSE WIDTH TJ = 150C 0.1 0.01 100 0.1 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 100 TJ = 150C 1 VDS = -15V 20s PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 A 100 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 10 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) TJ = 25C 1 A I D = -3.6A 1.5 1.0 0.5 VGS = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig. 4 Normalized On-Resistance Vs. Temperature 2015-11-16 AUIRF7304Q 10 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd -V GS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1500 Ciss 1000 Coss Crss 500 0 1 10 100 I D = -2.2A VDS = -16V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 12 0 A 0 5 15 20 25 A Q G , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -II D , Drain Current (A) -ISD , Reverse Drain Current (A) 10 TJ = 150C TJ = 25C 1 10 1ms 1 VGS = 0V 0.1 0.3 0.6 0.9 1.2 A 1.5 TA = 25 C TJ = 150 C Single Pulse 1 10ms 10 100 -VDS , Drain-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area 2015-11-16 AUIRF7304Q 5.0 -ID , Drain Current (A) 4.0 3.0 2.0 1.0 Fig 10a. Switching Time Test Circuit 0.0 25 50 75 100 TC , Case Temperature 125 150 ( C) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJA + TA 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 2015-11-16 AUIRF7304Q Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit Fig 13. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET(R) Power MOSFETs 6 2015-11-16 AUIRF7304Q SO-8 Package Outline (Dimensions are shown in millimeters (inches) D D IM B 8 6 7 6 M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 0.25 [ .010] A1 C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M AX 5 A IN C H ES M IN y 0.10 [ .004] B 8X L F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8X c 7 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 2015-11-16 AUIRF7304Q SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-11-16 AUIRF7304Q Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 Class M1B (+/- 100V) AEC-Q101-002 Class H0 (+/- 250V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 11/16/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. 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