AUIRF7304Q
VDSS -20V
RDS(on) max. 0.090
ID -4.3A
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Features
Advanced Planar Technology
Low On-Resistance
Dual P Channel MOSFET
Dynamic dv/dt Rating
Logic Level
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-11-16
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.7
A
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.4
IDM Pulsed Drain Current -17
PD @TA = 25°C Maximum Power Dissipation 2.0
W
Linear Derating Factor 0.016
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
W°/C
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
RJA Junction-to-Ambient ––– 62.5
SO-8
AUIRF7304Q
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRF7304Q SO-8 Tape and Reel 4000 AUIRF7304QTR
G D S
Gate Drain Source
HEXFET® Power MOSFET
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
AUIRF7304Q
2 2015-11-16
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
ISD -2.2A, di/dt 50A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
When mounted on 1 inch square copper board , t sec.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.090 VGS = -4.5V, ID = -2.2A
––– ––– 0.140 VGS = -2.7V, ID = -1.8A
VGS(th) Gate Threshold Voltage -0.70 ––– -1.5 V VDS = VGS, ID = -250µA
gfs Forward Trans conductance 4.0 ––– ––– S VDS = -16V, ID = -2.2A
IDSS Drain-to-Source Leakage Current ––– ––– -1.0 µA VDS = - 16V, VGS = 0V
––– ––– -25 VDS = -16V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– ––– 22
nC
ID = -2.2A
Qgs Gate-to-Source Charge ––– ––– 3.3 VDS = -16V
Qgd Gate-to-Drain Charge ––– ––– 9.0 VGS = -4.5V, See Fig.6 & 12
td(on) Turn-On Delay Time ––– 8.4 –––
ns
VDD = -10V
tr Rise Time ––– 26 ––– ID = -2.2A
td(off) Turn-Off Delay Time ––– 51 ––– RG = 6.0
tf Fall Time ––– 33 ––– RD = 4.5See Fig.10
LD Internal Drain Inductance ––– 4.0 –––
nH
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 6.0 ––– from package
and center of die contact
Ciss Input Capacitance ––– 610 –––
pF
VGS = 0V
Coss Output Capacitance ––– 310 ––– VDS = -15V
Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -2.5
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– -17 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C,IS = -1.8A,VGS = 0V
trr Reverse Recovery Time ––– 56 84 ns TJ = 25°C ,IF = -2.2A,
Qrr Reverse Recovery Charge ––– 71 110 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
AUIRF7304Q
3 2015-11-16
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance
Vs. Temperature
Fig. 1 Typical Output Characteristics
0.1
1
10
100
0.01 0.1 1 10 100
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5V
0.1
1
10
100
0.01 0.1 1 10 100
D
DS
20µs PULSE WIDTH
T = 150°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5V
0.1
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C T = 150°C
JJ
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -15V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
I = -3.6A
D
V = -4.5V
GS
AUIRF7304Q
4 2015-11-16
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-Drain Diode
Forward Voltage
0
500
1000
1500
110100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25
G
GS
A
FOR TEST CIRCUIT
SEE FIGURE 12
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -2.2A
V = -16V
D
DS
0.1
1
10
100
0.3 0.6 0.9 1.2 1.5
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
1ms
10ms
AUIRF7304Q
5 2015-11-16
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10a. Switching Time Test Circuit
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperatur e ( C)
-I , Drain Current (A)
°
C
D
Fig 10b. Switching Time Waveforms
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF7304Q
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Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
Fig 13. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
AUIRF7304Q
7 2015-11-16
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
SO-8 Part Marking Information
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSIN C H ES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C AB
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
N O TES:
1. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y14.5M -1994.
2. CONTROLLING DIM ENSION: MILLIM ETER
3. DIMENSIONS ARE SHOWN IN MILLIM ETERS [INCHES].
5 DIM EN SIO N D O ES N O T IN CLUD E M O LD PRO TRUSIO N S.
6 DIM EN SIO N D O ES N O T IN CLUD E M O LD PRO TRUSIO N S.
M O LD PRO TRU SIO N S N O T TO EXC EED 0.25 [.010].
7 D IM EN SIO N IS TH E LEN G TH O F LEA D FO R SO LD ERIN G TO
A S U B S T R A T E .
M O LD PRO TRU SIO N S N O T TO EXC EED 0.15 [.006].
8X 1.78 [.070]
AUIRF7304Q
8 2015-11-16
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF7304Q
9 2015-11-16
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level SO-8 MSL1
ESD
Machine Model Class M1B (+/- 100V)†
AEC-Q101-002
Human Body Model Class H0 (+/- 250V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000V)†
AEC-Q101-005
RoHS Compliant Yes
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
11/16/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
† Highest passing voltage.
