REVISIONS DOC. NO. SPC-FOO5 * Effective: 7/8/02 * DCP No: 1598 ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED i ti mp WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC DcP #/ REV DESCRIPTION DRAWN| DATE |CHECKD| DATE |APPRVD) DATE i Iu < st >) TECHNOLOGY. 1447] A RELEASED HO | 5/19/04) SF | 8/10/04) JC | 8/10/04 SPC-FOOS.DWG 1885 B UPDATED TO ROHS COMPLIANCE EO | 02/03/08} HO | 2/6/06 | HO 2/6/06 Description: Switchmode series TO220 NPN Silicon Power Transistor. The MJE13005 transistor is designed for high voltage, high speed, Power switching in inductive circuits. They are particularly suited for 115220V switchmode applications. Features: . . . Switching regulators 4 pn Configuration: RoHS DC-DC convertors 2 Colle t Compliant Inverters 3, cmitter Solenoid and relay drivers Motor controls 4. Collector Absolute Maximum Ratings: 2 Electrical Characteristics: (Ty = +25C unless otherwise specified) CollectorEmitter Voltage, Vopy = 7O00V 3 CollectorEmitter Voltage, Vero = 400V [Parameter | Symbol [Test Conditions [Min |Max| Unit | Emitter-Base Voltage, Vegp9 = 9V OFF Characteristics Continuous Collector Current, Ib = 4A CollectorEmitter Breakdown Voltage |iarycro lig = 10mA, Ig = 0 400|- |v Base Current, Ef = 2A . soe . Collector Cut-Off C it Vee = 7OOV, V, = 1.5V -~ i A Total Device Dissipation (Te = +25C), Pp = 75W - ~ : ae - serv <= : ~ Derate above 25C = 0.6W/*C miter Cutmoff Gurren Keo __[Mep = 9: lo = = m Operating Junction Temperature Range, Tj = 65C to +150C ON Characteristics Storage Temperature Range, Tstg = 65C to +150C DC Current Gain, Note 1 Fre Vee = 5V, Ib = 1A 10 |60 |- Vee = 5V, I = 2A 8 |40 |- CollectorEmitter Saturation Voltage Voeteat) kb = 1A, h = 200mA 0.5 |v B C = Note 1 Ie = 2A, Ig = 500mA foe |v | fe H E NPN BaseEmitter Saturation Voltage Voetect) Ib = 1A, k = 200mA 1.2 |V H | 1 Note 1 Io = 2A, ly = 500mA |1.6 |v i 7 3 Collector Small-Signal Characteristics A a] 0 Current GainBandwidth Product |fr Vor = 10V, Io = 500mA, f = 1MHz = [4 |[- [MHz] 2 Base Switching Characteristics 12 3 lay Ti - ra N { jo 0 Delay Time te Veo = 125V, Ip = 2A, Ib = lap = 0.4A c L | | | Rise Time tr = _|9-7 Jus } I I I 1 Emitter Storage Time ts Voc = 125V, Ie = 2A, Igy = lop = 0.48 - 14 K | | | Fall Time te los yout oh Note 1: Pulse test: Pulse width $300us, Duty cycle $2%. = Dimensions| A B Cc |D E | F G H J K L M N 0 Dt Le J re Max. |16.51['0.67 [4.83[0.90|1.40| 3.88] 2.79| 3.43]0.56| 14.73/4.07 [2.92[31.24] _. M Min. 14.42) 9.63 /3.65]) 11.15] 3.75) 2.29) 2.54) | 12.70/2.80) 2.03) DISCLAIMER: TOLERANCES: DRAWN BY: DATE: DRAWING TITLE: ALL STATEMENTS AND TECHNICAL INFORMATION CONTAINED | UNI ESS OTHERWISE |_HISHAM ODISH 5/19/04 Transistor, Power, Silicon, TO-220, NPN HEREIN ARE BASED UPON INFORMATION AND/OR TESTS WE BELIEVE TO BE ACCURATE AND RELIABLE. SINCE SPECIFIED, CHECKED BY: DATE: SIZE] DWG. NO. ELECTRONIC FILE REV CONDITIONS OF USE ARE BEYOND OUR CONTROL, THE ; GSeR SHALL DETERMINE THE SUNABILIY OF THE PRopuct | DIMENSIONS ARE Steve Feiwell 8/10/04] A MJE13005 01H0840.DWG | B FOR THE INTENDED USE AND ASSUME ALL RISK AND FOR REFERENCE APPROVED BY: DATE: LIABILITY WHATSOEVER IN CONNECTION THEREWITH. PURPOSES ONLY. j ae j