VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RE
TIFIER
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6620 thru 1N6625
1N6620 thru 1N6625
DESCRIPTION APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 10 00 volts are hermetically sealed with voidless-
glass construction usi ng an internal “Categ ory I” metallurg ical bond. T hese devices
are also availa ble in surface mount ME LF package configurations by adding a “US”
suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requireme nts includin g stand ard, fast and u ltrafast
device types in both through-hole a nd surface mount packages.
Package “A”
Axial
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Microsemi
Scottsdale Division Page 1
FEATURES APPLIC ATIONS / BENE FITS
• Popular JEDEC registered 1N6620 to 1N6625 series
• Voidless hermetically s ealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/585
• Further options for screening in accordance with
MIL-PRF-19500 for JANS by using a “SP” prefix, e.g.
SP6620, SP6624, etc.
• Surface mount equivalents also avai lable in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N6620US thru 1 N6625US)
• Ultrafast recovery rectifier series 200 to 1000 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +150oC
• Storage Temperature: -65oC to +175oC
• Peak Forward Surge Current @ 25oC: 20 Amps
(except 1N6625 which is 15 Amps)
Note: Test pulse = 8.3 ms, half-sine wave.
• Average Rectified For ward Current (IO) at TL= +55oC
(L=.375 inch from body):
1N6620 thru 1N6622: 2.0 Amps
1N6623 thru 1N6625: 1.5 Amps
(Derate linearly at 0.833%/oC for TL> +55oC)
• Average Rectified For ward Current (IO) at TA=25oC:
1N6620 thru 1N6622: 1.2 Amps
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO
rating is typical for PC boards wher e thermal
resistance from mounting point to ambient is
sufficiently controlled where TJ(max) is not exceeded.)
• Thermal Resistance L= 0.375 inch (RθJL): 38oC/W
• Capacitance at VR= 10 V: 10 pF
• Solder temperature: 260oC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-296
• Weight: 340 mg
• See package dimensions on l ast page
Copyright © 2009
10-06-2009 REV C; SA7-55.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503