MMBT4403LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 − Vdc
Collector−Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0) V(BR)CBO −40 − Vdc
Emitter−Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc
Base Cutoff Current
(VCE = −35 Vdc, VEB = −0.4 Vdc) IBEV − −0.1 Adc
Collector Cutoff Current
(VCE = −35 Vdc, VEB = −0.4 Vdc) ICEX − −0.1 Adc
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −150 mAdc, VCE = −2.0 Vdc) (Note 3)
(IC = −500 mAdc, VCE = −2.0 Vdc) (Note 3)
hFE 30
60
100
100
20
−
−
−
300
−
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat) −
−−0.4
−0.75
Vdc
Base−Emitter Saturation Voltage (Note 3)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat) −0.75
−−0.95
−1.3
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz) fT200 − MHz
Collector−Base Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Ccb − 8.5 pF
Emitter−Base Capacitance
(VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF
Input Impedance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hie 1.5 15 k
Voltage Feedback Ratio
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4
Small−Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe 60 500 −
Output Admittance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hoe 1.0 100 mhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = −30 Vdc, VEB = −2.0 Vdc, td− 15
Rise Time
,
.
,
IC = −150 mAdc, IB1 = −15 mAdc) tr− 20 ns
Storage Time (VCC = −30 Vdc, IC = −150 mAdc, ts− 225
Fall Time
,
,
IB1 = IB2 = −15 mAdc) tf− 30 ns
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.