1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol MPSA42 MPSA43 Unit
Collector–Emitter Voltage VCEO 300 200 Vdc
Collector–Base Voltage VCBO 300 200 Vdc
Emitter–Base Voltage VEBO 6.0 6.0 Vdc
Collector Current — Continuous IC500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/mW
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0) MPSA42
MPSA43
V(BR)CEO 300
200 —
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0) MPSA42
MPSA43
V(BR)CBO 300
200 —
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0) V(BR)EBO 6.0 — Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0) MPSA42
(VCB = 160 Vdc, IE = 0) MPSA43
ICBO —
—0.1
0.1
µAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0) MPSA42
(VEB = 4.0 Vdc, IC = 0) MPSA43
IEBO —
—0.1
0.1
µAdc
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSA42/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
123
Motorola, Inc. 1998
COLLECTOR
3
2
BASE
1
EMITTER
REV 1
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
hFE 25
40
40
—
—
—
—
Collector–Emitter Saturation V oltage
(IC = 20 mAdc, IB = 2.0 mAdc) MPSA42
MPSA43
VCE(sat) —
—0.5
0.4
Vdc
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) —0.9 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT50 — MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MPSA42
MPSA43
Ccb —
—3.0
4.0
pF
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
C, CAPACITANCE (pF)
Figure 1. DC Current Gain
VR, REVERSE VOLTAGE (VOL TS)
0.1
100
0.1
10
1.0 10 1000
Ceb @ 1MHz
Figure 2. Capacitance
IC, COLLECTOR CURRENT (mA) 10070503020107.05.03.02.0
80
70
50
30
20
10
TJ = 25
°
C
VCE = 20 V
f = 20 MHz
f , CURRENT–GAIN — BANDWIDTH (MHz)
T
1.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Current–Gain – Bandwidth
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
100
1.0 Ccb @ 1MHz
60
40
VBE(on) @ 25
°
C, VCE = 10 V
VCE(sat) @ 25
°
C, IC/IB = 10
VBE(sat) @ 25
°
C, IC/IB = 10
VCE(sat) @ 125
°
C, IC/IB = 10
VCE(sat) @ –55
°
C, IC/IB = 10
VBE(sat) @ 125
°
C, IC/IB = 10
VBE(sat) @ –55
°
C, IC/IB = 10
VBE(on) @ 125
°
C, VCE = 10 V
VBE(on) @ –55
°
C, VCE = 10 V
Figure 4. ”ON” Voltages
IC, COLLECTOR CURRENT (mA)
120
0.1 1.0 10
100
80
60
0
hFE, DC CURRENT GAIN
TJ = +125
°
C
25
°
C
–55
°
C
VCE = 10 Vdc
100
20
40
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–11
(TO–226AA)
ISSUE AJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
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MPSA42/D
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