Order this document by MPSA42/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSA42 MPSA43 Unit Collector - Emitter Voltage VCEO 300 200 Vdc Collector - Base Voltage VCBO 300 200 Vdc Emitter - Base Voltage VEBO 6.0 6.0 CASE 29-11, STYLE 1 TO-92 (TO-226AA) Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/mW Thermal Resistance, Junction to Case RqJC 83.3 C/mW ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 300 200 -- -- 300 200 -- -- 6.0 -- -- -- 0.1 0.1 -- -- 0.1 0.1 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CEO MPSA42 MPSA43 V(BR)CBO MPSA42 MPSA43 Emitter - Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) MPSA42 MPSA43 Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MPSA42 MPSA43 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Vdc Vdc Vdc Adc ICBO Adc IEBO Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1998 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 25 40 40 -- -- -- -- -- 0.5 0.4 VBE(sat) -- 0.9 Vdc fT 50 -- MHz -- -- 3.0 4.0 ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector - Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE -- VCE(sat) MPSA42 MPSA43 Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 2 v 300 ms, Duty Cycle v 2.0%. Ccb MPSA42 MPSA43 pF Motorola Small-Signal Transistors, FETs and Diodes Device Data 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 100 80 25C 60 40 -55C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 f T, CURRENT-GAIN -- BANDWIDTH (MHz) 80 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 70 60 50 40 30 TJ = 25C VCE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current-Gain - Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. "ON" Voltages Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- N CASE 029-11 (TO-226AA) ISSUE AJ STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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