BAV70T
Aug-24-20011
Silicon Switching Diode Array
For high-speed switching applications
Common cathode
VPS05996
1
2
3
EHA07179
3
12
A1 A2
C1/C2
Type Marking Pin Configuration Package
BAV70T A4s 1 = A1 2 = A2 3 = C1/2 SC75
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR70 V
Peak reverse voltage VRM 70
Forward current IF200 mA
Surge forward current, t = 1
sIFS 4.5 A
Total power dissipation, TS = 73 °C Ptot 250 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
310 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BAV70T
Aug-24-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter ValuesSymbol Unit
typ. max.min.
DC characteristics
VBreakdown voltage
I(BR) = 100 µA --70
V(BR)
mVForward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
-
-
-
-
VF
715
855
1000
1250
-
-
-
-
µAReverse current
VR = 70 V - -
IR2.5
Reverse current
VR = 25 V, TA = 150 °C
VR = 70 V, TA = 150 °C
IR
30
50
-
-
-
-
AC characteristics
CD- -Diode capacitance
VR = 0 V, f = 1 MHz pF1.5
trr - - 6 nsReverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100
,
measured at IR = 1mA
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator: tp = 100ns, D = 0.05,
tr = 0.6ns, Ri = 50
Oscillograph: R = 50
, tr = 0.35ns,
C
1pF
BAV70T
Aug-24-20013
Forward current IF = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
mA
250
I
F
Forward current IF = f (VF)
TA = 25°C
0
0
EHB00066BAV 70
Ι
0.5 1.0 V 1.5
50
100
mA
150
F
F
V
maxtyp
Permissible Pulse Load RthJS = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
R
thJS
tbd
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
IFmax/IFDC
tbd
BAV70T
Aug-24-20014
Reverse current IR = f (TA)
10
10
10
0 50 100 150
BAV 70 EHB00065
nA
T
A
Ι
R
˚C
10
10
5
4
3
2
1
5
5
5
25V
70V
max.
= 70 V
R
V
typ.
Forward voltage VF = f (TA)
0
0.5
1.0
0 50 100 150
BAV 70 EHB00068
V
TA
VF
˚C
Ι
F= 100 mA
10 mA
1 mA
0.1 mA
