BAS86
Schottky barrier single diode
25 July 2012 Product data sheet
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1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device
(SMD) package with tin-plated metal discs at each end. It is suitable for “automatic
placement” and as such it can withstand immersion soldering.
1.2 Features and benefits
Low forward voltage
High breakdown voltage
Guard ring protected
Hermetically sealed glass SMD package.
1.3 Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IF(AV) average forward
current
[1] - - 200 mA
VRreverse voltage - - 50 V
VFforward voltage IF = 100 mA; Tamb = 25 °C - - 900 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
NXP Semiconductors BAS86
Schottky barrier single diode
BAS86 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 25 July 2012 2 / 9
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode[1]
2 A anode
k a
LLDS; MiniMelf (SOD80C)
aaa-003679
K A
[1] The marking band indicates the cathode.
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BAS86 LLDS;
MiniMelf
hermetically sealed glass surface-mounted package; 2
connectors
SOD80C
4. Marking
Table 4. Marking codes
Type number Marking code
BAS86 marking band
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage - 50 V
IFforward current - 200 mA
IF(AV) average forward current [1] - 200 mA
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 500 mA
IFSM non-repetitive peak forward
current
tp = 10 ms; Tj(init) = 25 °C - 5 A
Tjjunction temperature - 125 °C
Tamb ambient temperature -65 125 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
NXP Semiconductors BAS86
Schottky barrier single diode
BAS86 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 25 July 2012 3 / 9
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - - 320 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
IF = 0.1 mA; Tamb = 25 °C - - 300 mV
IF = 1 mA; Tamb = 25 °C - - 380 mV
IF = 10 mA; Tamb = 25 °C - - 450 mV
IF = 30 mA; Tamb = 25 °C - - 600 mV
VFforward voltage
IF = 100 mA; Tamb = 25 °C - - 900 mV
IRreverse current VR = 40 V; Tamb = 25 °C; pulsed;
tp ≤ 300 µs; δ ≤ 0.02
- - 5 µA
Cddiode capacitance f = 1 MHz; Tamb = 25 °C; VR = 1 V - - 8 pF
trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tamb = 25 °C
- - 4 ns
NXP Semiconductors BAS86
Schottky barrier single diode
BAS86 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 25 July 2012 4 / 9
1.20.80.40 VF(V)
IF
(mA)
103
102
10
1
10- 1
mld357
(1) (2) (3)
(1) (2) (3)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig. 1. Forward current as a function of forward
voltage; typical values
mgc686
105
104
IR
(nA)
103
102
10- 1
10
1
500 10 20 30 40
VR(V)
(1)
(2)
(3)
(1) Tamb = 85 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig. 2. Reverse current as a function of reverse
voltage; typical values
mgc687
0 50
12
Cd
(pF)
0
4
8
10 20 30 40
VR(V)
Tamb = 25 °C; f = 1 MHz
Fig. 3. Diode capacitance as a function of reverse
voltage; typical values
0
50
100
150
200
250
0 50 100 150
IF(AV)
(mA)
Tamb (°C)
mra540
FR4 PCB, standard footprint
Fig. 4. Average forward current as a function of
ambient temperature; derating curve
8. Test information
NXP Semiconductors BAS86
Schottky barrier single diode
BAS86 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 25 July 2012 5 / 9
trr
(1)
+ IF
t
output signal
trtp
t
10 %
90 %
VR
input signal
V = VR+ IF× RS
RS= 50 ΩIF
D.U.T.
Ri= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
(1) IR = 1 mA
Fig. 5. Reverse recovery time test circuit and waveforms
9. Package outline
06-03-16Dimensions in mm
1.60
1.45
0.3
3.7
3.3
0.3
Fig. 6. LLDS; MiniMelf (SOD80C)
10. Soldering
sod080c
2.30
4.30
4.55
1.601.702.25
0.90
(2x)
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
Fig. 7. Reflow soldering footprint for SOD80C (LLDS; MiniMelf)
NXP Semiconductors BAS86
Schottky barrier single diode
BAS86 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 25 July 2012 6 / 9
Fig. 8. Wave soldering footprint for SOD80C (LLDS; MiniMelf)
11. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
BAS86 v.5 20120725 Product data sheet - BAS86 v.4
Modifications: Editorial update
BAS86 v.4 20100908 Product data sheet - BAS86 v.3
BAS86 v.3 20000525 Product specification - BAS86 v.2
BAS86 v.2 19961001 Product specification - BAS86 v.1
BAS86 v.1 19960320 Product specification - -
NXP Semiconductors BAS86
Schottky barrier single diode
BAS86 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 25 July 2012 7 / 9
12. Legal information
12.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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and the products or of the application or use by customer’s third party
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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NXP Semiconductors BAS86
Schottky barrier single diode
BAS86 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 25 July 2012 8 / 9
grant, conveyance or implication of any license under any copyrights, patents
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
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HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NXP Semiconductors BAS86
Schottky barrier single diode
BAS86 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 25 July 2012 9 / 9
13. Contents
1 Product profile ....................................................... 1
1.1 General description .............................................. 1
1.2 Features and benefits ...........................................1
1.3 Applications .......................................................... 1
1.4 Quick reference data ............................................ 1
2 Pinning information ............................................... 2
3 Ordering information ............................................. 2
4 Marking ................................................................... 2
5 Limiting values .......................................................2
6 Thermal characteristics .........................................3
7 Characteristics .......................................................3
8 Test information ..................................................... 4
9 Package outline ..................................................... 5
10 Soldering ................................................................ 5
11 Revision history .....................................................6
12 Legal information ...................................................7
12.1 Data sheet status ................................................. 7
12.2 Definitions .............................................................7
12.3 Disclaimers ...........................................................7
12.4 Trademarks .......................................................... 8
© NXP B.V. 2012. All rights reserved
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Date of release: 25 July 2012