2.5 GHz to 8.5 GHz, I/Q Mixer
Data Sheet
HMC8193
Rev. B Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©20172018 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Passive I/Q mixer
RF and LO range: 2.5 GHz to 8.5 GHz
Wide IF range: dc to 4 GHz
Single-ended RF, LO, and IF
Conversion loss (downconverter): 9 dB (typical)
Image rejection (downconverter): 25 dBc (typical)
SSB noise figure (downconverter): 11.5 dB (typical)
Input IP3 (downconverter): 20 dBm (typical)
Input P1dB compression point (downconverter): 13 dBm
(typical)
Input IP2 (downconverter): 58 dBm (typical)
RF to IF isolation (downconverter): 22 dB (typical)
LO to RF isolation (downconverter): 48 dB (typical)
LO to IF isolation (downconverter): 38 dB (typical)
Amplitude balance (downconverter): ±0.5 dB (typical)
Phase balance (downconverter): ±5° (typical)
RF return loss: 13 dB (typical)
LO return loss 13 dB (typical)
IF return loss: 17 dB (typical)
Exposed pad, 4 mm × 4 mm, 24-terminal, ceramic
LCC package
APPLICATIONS
Test and measurement instrumentation
Military, aerospace, and radar
Direct conversion receivers
FUNCTIONAL BLOCK DIAGRAM
13
1
3
4
2
7
NIC
NIC
GND
RF
5
6
GND
NIC NIC
14
GND
GND
PACKAGE
BASE
15
LO
16
GND
17
NIC
18
NIC
NIC
8
NIC
9
IF1
10
NIC
11
IF2
12 19
GND NIC
20
NIC
21
NIC
22
NIC
23
NIC
24
NIC
14353-001
HMC8193
Figure 1.
GENERAL DESCRIPTION
The HMC8193 is a passive, in phase/quadrature (I/Q), monolithic
microwave integrated circuit (MMIC) mixer that can be used
either as an image rejection mixer for receiver operations, or as
a single-sideband upconverter for transmitter operations from
2.5 GHz to 8.5 GHz. The inherent I/Q architecture of the
HMC8193 offers excellent image rejection and thereby eliminates
the need for expensive filtering of unwanted sidebands. The
mixer also provides excellent local oscillator (LO) to radio
frequency (RF) and LO to intermediate frequency (IF) isolation
and reduces the effect of LO leakage to ensure signal integrity.
Being the HMC8913 is a passive mixer, it does not require any
dc power sources. The device offers a lower noise figure than an
active mixer, ensuring superior dynamic range for high
performance and precision applications.
The HMC8193 is fabricated on a gallium arsenide (GaAs),
metal semiconductor field effect transistor (MESFET) process
and uses Analog Devices, Inc., mixer cells and a 90° hybrid. It is
available in a compact, 4 mm × 4 mm, 24-lead LCC package
and operates over the40°C to +85°C temperature range. An
evaluation board for this device is also available.
HMC8193 Data Sheet
Rev. B | Page 2 of 36
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics..................................................................... 5
Typical Performance Characteristics ............................................. 6
Downconverter Performance ...................................................... 6
Upconverter Performance ......................................................... 18
Isolation and Return Loss ......................................................... 24
IF Bandwidth .............................................................................. 26
Amplitude and Phase Imbalance ............................................. 27
Spurious and Harmonics Performance ................................... 29
Theory of Operation ...................................................................... 32
Applications Information .............................................................. 33
Soldering Information and Recommended Land Pattern .... 34
Evaluation Board Information.................................................. 35
Outline Dimensions ....................................................................... 36
Ordering Guide .......................................................................... 36
REVISION HISTORY
5/2018Rev. A to Rev. B
Changes to Applications Information Section ............................ 33
1/2018Rev. 0 to Rev. A
Changes to Features .......................................................................... 1
Changed Single-Sideband (SSB) Noise Figure Parameter from
15 dB Typical to 11.5 dB Typical, Table 1 ...................................... 3
Changes to Ordering Guide .......................................................... 36
8/2017Revision 0: Initial Version
Data Sheet HMC8193
Rev. B | Page 3 of 36
SPECIFICATIONS
TA = 25°C, IF = 100 MHz, and LO drive = 18 dBm; all measurements performed as downconverter with lower sideband selected, unless
otherwise noted.
Table 1.
Parameter Symbol Min Typ Max Unit
RADIO FREQUENCY
RF
2.5
8.5
GHz
LOCAL OSCILLATOR LO
Frequency 2.5 8.5 GHz
Drive Level 18 dBm
INTERMEDIATE FREQUENCY IF DC 4 GHz
RF PERFORMANCE AS DOWNCONVERTER
Conversion Loss 9 11 dB
Image Rejection 23 25 dBc
Single-Sideband (SSB) Noise Figure
dB
Input Third-Order Intercept IP3 16 20 dBm
Input 1 dB Compression Point P1dB 13 dBm
Input Second-Order Intercept IP2 58 dBm
Isolation
RF to IF 13 22 dB
LO to RF 37 48 dB
LO to IF 30 38 dB
Amplitude Balance ±0.5 dB
Phase Balance ±5 Degrees
RF PERFORMANCE AS UPCONVERTER
Conversion Loss 8.5 dB
Sideband Rejection 23 dBc
Input Third-Order Intercept IP3 21 dBm
RETURN LOSS PERFORMANCE
RF 13 dB
LO
dB
IFx
dB
HMC8193 Data Sheet
Rev. B | Page 4 of 36
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
RF Input Power 21 dBm
LO Input Power 25 dBm
IF Input Power 21 dBm
IF Source/Sink Current 6 mA
Continuous Power Dissipation, PDISS
(TA = 85°C, Derate 12.44 mW/°C Above 85°C)
1120 mW
Maximum Junction Temperature
175°C
Maximum Peak Reflow Temperature (MSL3)
260°C
Operating Temperature Range 40°C to +85°C
Storage Temperature Range 65°C to +150°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM) 2000 V
Field Induced Charged Device Model (FICDM) 1250 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
Table 3. Thermal Resistance
Package Type
θ
JA
θ
JC
Unit
E-24-11 120 80 °C/W
1 Thermal impedance simulated values are based on a JEDEC 2S2P test board
with 4 × 4 thermal vias. See JEDEC JESD51-12 for additional information.
ESD CAUTION
Data Sheet HMC8193
Rev. B | Page 5 of 36
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
13
1
3
4
2
7
NIC
NIC
GND
RF 5
6
GND
NIC NIC
14 GND
15 LO
16 GND
17 NIC
18 NIC
NIC
8
NIC
9
IF1
10
NIC
11
IF2
12 19
GND NIC
20
NIC
21
NIC
22
NIC
23
NIC
24
NIC
HMC8193
TOP VIEW
(Not to S cale)
14353-002
NOTES
1. NOT INT E RNALLY CONNECTED. NO CO NNE CTION IS
REQUIRED. THE S E P INS CAN BE CONNECT E D TO
RF/ DC GRO UND WITHO UT AFFECTING PE RFORM ANCE .
2. EXPOSED PAD. THE EXPOSED PAD MUST BE
CONNECTED TO RF/ DC GROUND.
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1, 2, 6 to 8, 10, 13, 17 to 24 NIC Not Internally Connected. No connection is required. These pins can be connected to RF/dc
ground without affecting performance.
3, 5, 12, 14, 16 GND Ground Connect. These pins and package bottom must be connected to RF/dc ground. See Figure 3
for the interface schematic.
4 RF Radio Frequency. This pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface
schematic.
9 IF1 First and Quadrature Intermediate Frequency. This pin is dc-coupled. For applications not
requiring operation to dc, dc block this port externally using a series capacitor with a value
selected to pass the necessary IF frequency range. For operation to dc, this pin must not source or
sink more than 6 mA of current; otherwise, the device does not function and may fail. See Figure 4
for the interface schematic.
11 IF2 Second Quadrature Intermediate Frequency. This pin is dc-coupled. For applications not
requiring operation to dc, dc block this port externally using a series capacitor with a value
selected to pass the necessary IF frequency range. For operation to dc, this pin must not source or
sink more than 6 mA of current; otherwise, the device does not function and may fail. See Figure 4 for
the interface schematic.
15 LO Local Oscillator. This pin is ac-coupled and matched to 50 Ω. See Figure 6 for the interface
schematic.
EPAD Exposed Pad. The exposed pad must be connected to RF/dc ground.
INTERFACE SCHEMATICS
GND
14353-003
Figure 3. GND Interface Schematic
IF1, IF2
14353-004
Figure 4. IF1, IF2 Interface Schematic
RF
14353-005
Figure 5. RF Interface Schematic
LO
14353-006
Figure 6. LO Interface Schematic
HMC8193 Data Sheet
Rev. B | Page 6 of 36
TYPICAL PERFORMANCE CHARACTERISTICS
DOWNCONVERTER PERFORMANCE
Downconverter Performance at IF = 100 MHz, Lower Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
0
–20 2 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
–15
–10
–5
345678
+85°C
+25°C
–40°C
14353-007
Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures
40
0
IM AGE REJE CTI ON (d Bc)
+85°C
+25°C
–40°C
5
10
15
20
25
30
35
2 9
RF FREQ UE NCY ( GHz)
345678
14353-008
Figure 8. Image Rejection vs. RF Frequency at Various Temperatures
40
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
35
2 9
RF FREQ UE NCY ( GHz)
3 4 5 6 7 8
+85°C
+25°C
–40°C
14353-009
Figure 9. Input IP3 vs. RF Frequency at Various Temperatures
0
–20 2 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
–15
–10
–5
345678
20dBm
18dBm
16dBm
14dBm
14353-010
Figure 10. Conversion Gain vs. RF Frequency at Various LO Drives
40
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
35
2 9
RF FREQ UE NCY ( GHz)
345678
20dBm
18dBm
16dBm
14dBm
14353-011
Figure 11. Image Rejection vs. RF Frequency at Various LO Drives
40
35
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
2 9
RF FREQ UE NCY ( GHz)
3 4 5 6 7 8
20dBm
18dBm
16dBm
14dBm
14353-012
Figure 12. Input IP3 vs. RF Frequency at Various LO Drives
Data Sheet HMC8193
Rev. B | Page 7 of 36
100
90
02
INP UT IP 2 ( dBm)
10
20
30
40
50
60
70
80
9
RF FREQ UE NCY ( GHz)
3 4 5 6 7 8
+85°C
+25°C
–40°C
14353-013
Figure 13. Input IP2 vs. RF Frequency at Various Temperatures
25
0
INP UT P1d B ( dBm)
5
10
15
20
29
RF FREQ UE NCY ( GHz)
345678
+85°C
+25°C
–40°C
14353-014
Figure 14. Input P1dB vs. RF Frequency at Various Temperatures
100
90
02
INP UT IP 2 ( dBm)
10
20
30
40
50
60
70
80
9
RF FREQ UE NCY ( GHz)
34 5 6 7 8
20dBm
18dBm
16dBm
14dBm
14353-015
Figure 15. Input IP2 vs. RF Frequency at Various LO Drives
25
0
NOISE FIGURE (dB)
2 9
RF FREQ UE NCY ( GHz)
345678
5
10
15
20
18dBm
16dBm
14dBm
14353-016
Figure 16. Noise Figure vs. RF Frequency at Various LO Drives
HMC8193 Data Sheet
Rev. B | Page 8 of 36
Downconverter Performance at IF = 1000 MHz, Lower Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
0
–20 2 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
–15
–10
–5
345678
+85°C
+25°C
–40°C
14353-017
Figure 17. Conversion Gain vs. RF Frequency at Various Temperatures
70
60
0
IM AGE REJE CTI ON (d Bc)
10
20
30
40
50
2 9
RF FREQ UE NCY ( GHz)
3 4 5 6 7 8
+85°C
+25°C
–40°C
14353-018
Figure 18. Image Rejection vs. RF Frequency at Various Temperatures
40
02 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
5
10
15
20
25
30
35
3 4 5 6 7 8
+85°C
+25°C
–40°C
14353-019
Figure 19. Input IP3 vs. RF Frequency at Various Temperatures
0
–20 2 9
CONVE RS IO N GAIN ( dB)
RF FREQ UE NCY ( GHz)
–15
–10
–5
345678
20dBm
18dBm
16dBm
14dBm
14353-020
Figure 20. Conversion Gain vs. RF Frequency at Various LO Drives
70
02
IM AGE REJE CTI ON (d Bc)
10
20
30
40
50
60
9
RF FREQ UE NCY ( GHz)
3 4 5 6 7 8
20dBm
18dBm
16dBm
14dBm
14353-021
Figure 21. Image Rejection vs. RF Frequency at Various LO Drives
40
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
35
2 9
RF FREQ UE NCY ( GHz)
3 4 5 6 7 8
20dBm
18dBm
16dBm
14dBm
14353-022
Figure 22. Input IP3 vs. RF Frequency at Various LO Drives
Data Sheet HMC8193
Rev. B | Page 9 of 36
100
0
INP UT IP 2 ( dBm)
10
20
30
40
50
60
70
80
90
2 9
RF FREQ UE NCY ( GHz)
345678
+85°C
+25°C
–40°C
14353-023
Figure 23. Input IP2 vs. RF Frequency at Various Temperatures
25
0
INP UT P1d B ( dBm)
5
10
15
20
2 9
RF FREQ UE NCY ( GHz)
345678
+85°C
+25°C
–40°C
14353-024
Figure 24. Input P1dB vs. RF Frequency at Various Temperatures
100
0
INP UT IP 2 ( dBm)
10
20
30
40
50
60
70
80
90
2 9
RF FREQ UE NCY ( GHz)
3 4 56 7 8
20dBm
18dBm
16dBm
14dBm
14353-025
Figure 25. Input IP2 vs. RF Frequency at Various LO Drives
HMC8193 Data Sheet
Rev. B | Page 10 of 36
Downconverter Performance at IF = 3500 MHz, Lower Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
0
–5
–10
–15
–20 23456
CONVE RS IO N GAIN (dB)
RF FREQ UE NCY ( GHz) 7
+85°C
+25°C
–40°C
14353-026
Figure 26. Conversion Gain vs. RF Frequency at Various Temperatures
70
0
IM AGE REJE CTI ON (d Bc)
10
20
30
40
50
60
23456
RF FREQ UE NCY ( GHz) 7
+85°C
+25°C
–40°C
14353-027
Figure 27. Image Rejection vs. RF Frequency at Various Temperatures
7
40
35
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
2RF FREQ UE NCY ( GHz)
3 4 5 6
+85°C
+25°C
–40°C
14353-028
Figure 28. Input IP3 vs. RF Frequency at Various Temperatures
0
–20 2
CONVE RS IO N GAIN (dB)
RF FREQ UE NCY ( GHz)
3 4 5 6
–15
–10
–5
20dBm
18dBm
16dBm
14dBm
7
14353-029
Figure 29. Conversion Gain vs. RF Frequency at Various LO Drives
70
0
IM AGE REJE CTI ON (d Bc)
10
20
30
40
50
60
2RF FREQ UE NCY ( GHz)
3456
20dBm
18dBm
16dBm
14dBm
7
14353-030
Figure 30. Image Rejection vs. RF Frequency at Various LO Drives
40
35
02 7
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
5
10
15
20
25
30
3 4 5 6
20dBm
18dBm
16dBm
14dBm
14353-031
Figure 31. Input IP3 vs. RF Frequency at Various LO Drives
Data Sheet HMC8193
Rev. B | Page 11 of 36
100
0
INP UT IP 2 ( dBm)
10
20
30
40
50
60
70
80
90
2 7
RF FREQ UE NCY ( GHz)
3 4 5 6
+85°C
+25°C
–40°C
14353-032
Figure 32. Input IP2 vs. RF Frequency at Various Temperatures
2.5 7.5
RF FREQ UE NCY ( GHz)
25
0
INPUT P1dB (dBm)
5
10
15
20
+85°C
+25°C
–40°C
3.5 4.5 5.5 6.5
14353-033
Figure 33. Input P1dB vs. RF Frequency at Various Temperatures
100
0
INP UT IP 2 ( dBm)
10
20
30
40
50
60
70
80
90
2 7
RF FREQ UE NCY ( GHz)
3 4 5 6
20dBm
18dBm
16dBm
14dBm
14353-034
Figure 34. Input IP2 vs. RF Frequency at Various LO Drives
HMC8193 Data Sheet
Rev. B | Page 12 of 36
Downconverter Performance at IF = 100 MHz, Upper Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
0
–5
–10
–15
–20 2 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
345678
14353-035
Figure 35. Conversion Gain vs. RF Frequency at Various Temperatures
40
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
35 +85°C
+25°C
–40°C
2 9
RF FREQ UE NCY ( GHz)
345678
14353-036
Figure 36. Image Rejection vs. RF Frequency at Various Temperatures
40
35
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
2 9
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
3 4 5 6 7 8
14353-037
Figure 37. Input IP3 vs. RF Frequency at Various Temperatures
0
–20
CONV ERS IO N GAI N ( dB)
20dBm
18dBm
16dBm
14dBm
–15
–10
–5
29
RF FREQ UE NCY ( GHz)
3 4 5 6 7 8
14353-038
Figure 38. Conversion Gain vs. RF Frequency at Various LO Drives
40
0
IM AGE REJE CTI ON (d Bc)
5
10
15
20
25
30
35
2 9
RF FREQ UE NCY ( GHz)
345678
20dBm
18dBm
16dBm
14dBm
14353-039
Figure 39. Image Rejection vs. RF Frequency at Various LO Drives
40
35
0
INP UT IP 3 ( dBm)
5
10
15
20
25
30
2 9
RF FREQ UE NCY ( GHz)
3 4 5 6 7 8
20dBm
18dBm
16dBm
14dBm
14353-040
Figure 40. Input IP3 vs. RF Frequency at Various LO Drives
Data Sheet HMC8193
Rev. B | Page 13 of 36
100
0
INP UT IP 2 ( dBm)
10
20
30
40
50
60
70
80
90
2 9
RF FREQ UE NCY ( GHz)
345678
+85°C
+25°C
–40°C
14353-041
Figure 41. Input IP2 vs. RF Frequency at Various Temperatures
25
20
15
10
5
023456789
INP UT P1d B ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-042
Figure 42. Input P1dB vs. RF Frequency at Various Temperatures
20dBm
18dBm
16dBm
14dBm
100
0
INP UT IP 2 ( dBm)
10
20
30
40
50
60
70
80
90
2 9
RF FREQ UE NCY ( GHz)
345678
14353-043
Figure 43. Input IP2 vs. RF Frequency at Various LO Drives
HMC8193 Data Sheet
Rev. B | Page 14 of 36
Downconverter Performance at IF = 1000 MHz, Upper Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
0
–5
–10
–15
–20 3 54 6 7 8 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-044
Figure 44. Conversion Gain vs. RF Frequency at Various Temperatures
50
45
25
10
35
40
20
30
15
5
03 54 6 7 8 9
IM AGE REJE CTI ON (d Bc)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-045
Figure 45. Image Rejection vs. RF Frequency at Various Temperatures
40
35
30
20
10
25
15
5
03 54 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-046
Figure 46. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–20 3 54 6 7 8 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-047
Figure 47. Conversion Gain vs. RF Frequency at Various LO Drives
50
45
25
10
35
40
20
30
15
5
03 54 6 7 8 9
IM AGE REJE CTI ON (d Bc)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-048
Figure 48. Image Rejection vs. RF Frequency at Various LO Drives
40
35
30
20
10
25
15
5
03 54 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-049
Figure 49. Input IP3 vs. RF Frequency at Various LO Drives
Data Sheet HMC8193
Rev. B | Page 15 of 36
100
80
40
20
60
90
50
70
30
10
03 54 6 7 8 9
INP UT IP 2 ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-050
Figure 50. Input IP2 vs. RF Frequency at Various Temperatures
25
20
15
10
5
0
2.5 3.5 4.5 5.5 6.5 7.5 8.5
INPUT P1dB (d Bm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-051
Figure 51. Input P1dB vs. RF Frequency at Various Temperatures
100
80
40
20
60
90
50
70
30
10
03 54 6 7 8 9
INP UT IP 2 ( dBm)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-052
Figure 52. Input IP2 vs. RF Frequency at Various LO Drives
HMC8193 Data Sheet
Rev. B | Page 16 of 36
Downconverter Performance at IF = 3500 MHz, Upper Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
0
–5
–10
–15
–20 56789
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-053
Figure 53. Conversion Gain vs. RF Frequency at Various Temperatures
40
35
30
25
20
10
5
0
15
5 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-055
Figure 54. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–20 5 6 7 8 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-056
Figure 55. Conversion Gain vs. RF Frequency at Various LO Drives
40
35
30
25
20
10
5
0
15
5 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-058
Figure 56. Input IP3 vs. RF Frequency at Various LO Drives
Data Sheet HMC8193
Rev. B | Page 17 of 36
100
80
40
20
60
90
50
70
30
10
05 6 7 8 9
INP UT IP 2 ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-059
Figure 57. Input IP2 vs. RF Frequency at Various Temperatures
25
20
15
10
5
0456789
INP UT P1d B ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-060
Figure 58. Input P1dB vs. RF Frequency at Various Temperatures
100
80
40
20
60
90
50
70
30
10
056 7 8 9
INP UT IP 2 ( dBm)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-061
Figure 59. Input IP2 vs. RF Frequency at Various LO Drives
HMC8193 Data Sheet
Rev. B | Page 18 of 36
UPCONVERTER PERFORMANCE
Upconverter Performance at IF = 100 MHz, Lower Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
0
–5
–10
–15
–20 2 3 54 6 7 8 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-062
Figure 60. Conversion Gain vs. RF Frequency at Various Temperatures
40
35
30
20
0
10
25
15
5
2 3 54 6 7 8 9
SI DEBAND RE JE CTI ON (dBc)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-063
Figure 61. Sideband Rejection vs. RF Frequency at Various Temperatures
40
35
30
20
10
25
15
5
02 3 54 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-064
Figure 62. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–20 2 3 54 6 7 8 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-065
Figure 63. Conversion Gain vs. RF Frequency at Various LO Drives
40
35
30
20
10
25
15
5
02 3 54 6 7 8 9
SI DEBAND RE JE CTI ON (dBc)
RF FREQ UE NCY ( GHz)
14353-066
20dBm
18dBm
16dBm
14dBm
Figure 64. Sideband Rejection vs. RF Frequency at Various LO Drives
40
35
30
20
10
25
15
5
02 3 54 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-067
Figure 65. Input IP3 vs. RF Frequency at Various LO Drives
Data Sheet HMC8193
Rev. B | Page 19 of 36
Upconverter Performance at IF = 1000 MHz, Lower Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
14353-068
0
–5
–10
–15
–20 2 3 54 6 7 8 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
Figure 66. Conversion Gain vs. RF Frequency at Various Temperatures
14353-069
40
35
30
20
0
10
25
15
5
2 3 54 6 7 8 9
SI DEBAND RE JE CTI ON (dBc)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
Figure 67. Sideband Rejection vs. RF Frequency at Various Temperatures
14353-070
40
35
30
20
0
10
25
15
5
2 3 54 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
Figure 68. Input IP3 vs. RF Frequency at Various Temperatures
14353-071
0
–5
–10
–15
–20 2 3 54 6 7 8 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
Figure 69. Conversion Gain vs. RF Frequency at Various LO Drives
40
35
30
20
10
25
15
5
02 3 54 6 7 8 9
SI DEBAND RE JE CTI ON (dBc)
RF FREQ UE NCY ( GHz)
14353-072
20dBm
18dBm
16dBm
14dBm
Figure 70. Sideband Rejection vs. RF Frequency at Various LO Drives
40
35
30
20
10
25
15
5
02 3 54 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-073
Figure 71. Input IP3 vs. RF Frequency at Various LO Drives
HMC8193 Data Sheet
Rev. B | Page 20 of 36
Upconverter Performance at IF = 3500 MHz, Lower Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
14353-074
0
–5
–10
–15
–20 2 3 54 6 7
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
Figure 72. Conversion Gain vs. RF Frequency at Various Temperatures
14353-075
40
35
30
20
0
10
25
15
5
2 3 54 6 7
SI DEBAND RE JE CTI ON (dBc)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
Figure 73. Sideband Rejection vs. RF Frequency at Various Temperatures
14353-076
35
30
20
0
10
25
15
5
2 3 54 6 7
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
Figure 74. Input IP3 vs. RF Frequency at Various Temperatures
14353-077
0
–5
–10
–15
–20 2354 6 7
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
Figure 75. Conversion Gain vs. RF Frequency at Various LO Drives
14353-078
40
35
30
20
0
10
25
15
5
2 3 54 6 7
SI DEBAND RE JE CTI ON (dBc)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
Figure 76. Sideband Rejection vs. RF Frequency at Various LO Drives
14353-079
35
30
20
0
10
25
15
5
2 3 54 6 7
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
Figure 77. Input IP3 vs. RF Frequency at Various LO Drives
Data Sheet HMC8193
Rev. B | Page 21 of 36
Upconverter Performance at IF = 100 MHz, Upper Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
0
–5
–10
–15
–20 2 3 54 6 7 8 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-080
Figure 78. Conversion Gain vs. RF Frequency at Various Temperatures
40
30
20
10
02 3 54 6 7 8 9
SI DEBAND RE JE CTI ON (dBc)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-081
Figure 79. Sideband Rejection vs. RF Frequency at Various Temperatures
40
30
20
10
02 3 54 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-082
Figure 80. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–20 2 3 54 6 7 8 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
14353-083
20dBm
18dBm
16dBm
14dBm
Figure 81. Conversion Gain vs. RF Frequency at Various LO Drives
40
30
20
10
02 3 54 6 7 8 9
SI DEBAND RE JE CTI ON (dBc)
RF FREQ UE NCY ( GHz)
14353-084
20dBm
18dBm
16dBm
14dBm
Figure 82. Sideband Rejection vs. RF Frequency at Various LO Drives
40
30
20
10
02 3 54 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
14353-085
20dBm
18dBm
16dBm
14dBm
Figure 83. Input IP3 vs. RF Frequency at Various LO Drives
HMC8193 Data Sheet
Rev. B | Page 22 of 36
Upconverter Performance at IF = 1000 MHz, Upper Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
0
–5
–10
–15
–20 3 54 6 7 8 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-086
Figure 84. Conversion Gain vs. RF Frequency at Various Temperatures
40
35
30
20
10
25
15
5
03 54 6 7 8 9
SI DEBAND RE JE CTI ON (dBc)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-087
Figure 85. Sideband Rejection vs. RF Frequency at Various Temperatures
40
35
30
20
10
25
15
5
03 54 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-088
Figure 86. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–20 3 54 6 7 8 9
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
14353-089
20dBm
18dBm
16dBm
14dBm
Figure 87. Conversion Gain vs. RF Frequency at Various LO Drives
40
35
30
20
10
25
15
5
03 54 6 7 8 9
SI DEBAND RE JE CTI ON (dBc)
RF FREQ UE NCY ( GHz)
14353-090
20dBm
18dBm
16dBm
14dBm
Figure 88. Sideband Rejection vs. RF Frequency at Various LO Drives
40
35
30
20
10
25
15
5
03 54 6 7 8 9
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
14353-091
20dBm
18dBm
16dBm
14dBm
Figure 89. Input IP3 vs. RF Frequency at Various LO Drives
Data Sheet HMC8193
Rev. B | Page 23 of 36
Upconverter Performance at IF = 3500 MHz, Upper Sideband
Data taken at LO drive = 18 dBm and TA = 25°C, unless otherwise noted.
0
–5
–10
–15
–20 56789
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-092
Figure 90. Conversion Gain vs. RF Frequency at Various Temperatures
40
35
30
20
10
25
15
5
056789
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-094
Figure 91. Input IP3 vs. RF Frequency at Various Temperatures
0
–5
–10
–15
–20 56789
CONV ERS IO N GAI N ( dB)
RF FREQ UE NCY ( GHz)
14353-095
20dBm
18dBm
16dBm
14dBm
Figure 92. Conversion Gain vs. RF Frequency at Various LO Drives
40
35
30
20
10
25
15
5
056789
INP UT IP 3 ( dBm)
RF FREQ UE NCY ( GHz)
14353-097
20dBm
18dBm
16dBm
14dBm
Figure 93. Input IP3 vs. RF Frequency at Various LO Drives
HMC8193 Data Sheet
Rev. B | Page 24 of 36
ISOLATION AND RETURN LOSS
Data taken at LO drive = 18 dBm, TA = 25°C, unless otherwise noted.
70
60
40
20
50
30
10
0254
36 7 89
LO TO IF ISOLATION (dB)
LO FRE QUENCY ( GHz)
14353-098
IF1, –40°C
IF1, +25°C
IF1,+85°C
IF2, –40°C
IF2, +25°C
IF2, +85°C
Figure 94. LO to IF Isolation vs. LO Frequency at Various Temperatures
70
60
40
20
50
30
10
02 54
3 6 7 8 9
LO TO RF ISOLATION (dB)
LO FRE QUENCY ( GHz)
+85°C
+25°C
–40°C
14353-099
Figure 95. LO to RF Isolation vs. LO Frequency at Various Temperatures
40
35
30
20
0
10
25
15
5
2 3 54 6 7 8 9
RF TO IF ISOLATION (dB)
RF FREQ UE NCY ( GHz)
14353-100
IF1, –40°C
IF1, +25°C
IF1, +85°C
IF2, –40°C
IF2, +25°C
IF2, +85°C
Figure 96. RF to IF Isolation vs. RF Frequency at Various Temperatures
70
60
50
40
30
20
0
10
2 3 54 6 7 8 9
LO TO IF ISOLATION (dB)
LO FRE QUENCY ( GHz)
14353-101
IF1, 14dBm
IF1, 16dBm
IF1, 18dBm
IF1, 20dBm
IF2, 14dBm
IF2, 16dBm
IF2, 18dBm
IF2, 20dBm
Figure 97. LO to IF Isolation vs. LO Frequency at Various LO Drives
70
60
40
20
50
30
10
02 543 6 7 8 9
LO TO RF ISOLATION (dB)
LO FRE QUENCY ( GHz)
14353-102
20dBm
18dBm
16dBm
14dBm
Figure 98. LO to RF Isolation vs. LO Frequency at Various LO Drives
40
35
30
20
0
10
25
15
5
2 3 54 6 7 8 9
RF TO IF ISOLATION (dB)
RF FREQ UE NCY ( GHz)
14353-103
IF1, 14dBm
IF1, 16dBm
IF1, 18dBm
IF1, 20dBm
IF2, 14dBm
IF2, 16dBm
IF2, 18dBm
IF2, 20dBm
Figure 99. RF to IF Isolation vs. RF Frequency at Various LO Drives
Data Sheet HMC8193
Rev. B | Page 25 of 36
0
–5
–10
–15
–20 2 3 54 6 7 8 9
LO RETURN LOSS (dB)
LO FRE QUENCY ( GHz)
+85°C
+25°C
–40°C
14353-116
Figure 100. LO Return Loss vs. LO Frequency at Various Temperatures
0
–5
–10
–15
–25
–20
2 3 54 6 7 8 9
RF RE TURN LOSS ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-117
Figure 101. RF Return Loss vs. RF Frequency at Various Temperatures
LO Frequency = 5.5 GHz
0
–5
–10
–15
–25
–20
00.5 1.51.0 2.0 2.5 3.53.0 4.0
IF RETURN LOSS (dB)
IF FREQUENCY ( GHz)
14353-118
IF 1, –40° C
IF 1, +25°C
IF 1, +85°C
IF 2, –40° C
IF 2, +25°C
IF 2, +85°C
Figure 102. IF Return Loss vs. IF Frequency at Various Temperatures
LO Frequency = 5.5 GHz
0
–5
–10
–15
–20 2 3 54 6 7 8 9
LO RETURN LOSS (dB)
LO FRE QUENCY ( GHz)
20dBm
18dBm
16dBm
14353-119
Figure 103. LO Return Loss vs. LO Frequency at Various LO Drives
0
–5
–10
–15
–25
–20
2 3 54 6 7 8 9
RF RE TURN LOSS ( dB)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14353-120
Figure 104. RF Return Loss vs. RF Frequency at Various LO Drives
LO Frequency = 5.5 GHz
0
–5
–10
–15
–25
–20
00.5 1.51.0 2.0 2.5 3.53.0 4.0
IF RETURN LOSS (dB)
IF FREQUENCY ( GHz)
14353-121
IF 1, 16d Bm
IF 1, 18d Bm
IF 1, 20d Bm
IF 2, 16d Bm
IF 2, 18d Bm
IF 2, 20d Bm
Figure 105. IF Return Loss vs. IF Frequency at Various Temperatures
LO Frequency = 5.5 GHz
HMC8193 Data Sheet
Rev. B | Page 26 of 36
IF BANDWIDTH
Data taken as a downconverter, lower sideband, at LO drive = 18 dBm, TA = 25°C, unless otherwise noted.
0
–5
–10
–15
–20 0 1 32 4
CONV ERS IO N GAI N ( dB)
IF FRE QUENCY ( GHz)
+85°C
+25°C
–40°C
14353-122
Figure 106. Conversion Gain vs. IF Frequency at Various Temperatures
LO Frequency = 5.5 GHz
35
30
20
10
25
15
5
00 1 32 4
INP UT IP 3 ( dBm)
IF FRE QUENCY ( GHz)
+85°C
+25°C
–40°C
14353-123
Figure 107. Input IP3 vs. IF Frequency at Various Temperatures
LO Frequency = 5.5 GHz
0
–5
–10
–15
–20 0 1 32 4
CONV ERS IO N GAI N ( dB)
IF FRE QUENCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-124
Figure 108. Conversion Gain vs. IF Frequency at Various LO Drives
LO Frequency = 5.5 GHz
35
30
20
10
25
15
5
00 1 32 4
INP UT IP 3 ( dBm)
IF FRE QUENCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-125
Figure 109. Input IP3 vs. IF Frequency at Various LO Drives
LO Frequency = 5.5 GHz
Data Sheet HMC8193
Rev. B | Page 27 of 36
AMPLITUDE AND PHASE IMBALANCE
Downconverter Performance, Lower Sideband
4
3
1
–1
–2
2
0
–3
–42.5 3.5 7.55.54.5 6.5 8.5
AMPLITUDE IMBAL ANCE ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-126
Figure 110. Amplitude Imbalance vs. RF Frequency at Various Temperatures,
LO Drive = 18 dBm, IF = 100 MHz
10
0
–10
5
–5
2.5 4.53.5 5.5 6.5 7.5 8.5
PHASE IMBALANCE ( Degrees)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-127
Figure 111. Phase Imbalance vs. RF Frequency at Various Temperatures,
LO Drive = 18 dBm, IF = 100 MHz
4
3
1
–1
–2
2
0
–3
–42.5 3.5 7.5
5.5
4.5 6.5 8.5
AMPLITUDE I M BALANCE ( dB)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-128
Figure 112. Amplitude Imbalance vs. RF Frequency at Various LO Drives,
IF = 100 MHz, TA = 25°C
10
0
–10
5
–5
2.5 4.53.5 5.5 6.5 7.5 8.5
PHASE IMBALANCE ( Degrees)
RF FREQ UE NCY ( GHz)
14353-129
20dBm
18dBm
16dBm
14dBm
Figure 113. Phase Imbalance vs. RF Frequency at Various LO Drives,
IF = 100 MHz, TA = 25°C
HMC8193 Data Sheet
Rev. B | Page 28 of 36
Downconverter Performance, Upper Sideband
4
3
1
–1
–2
2
0
–3
–42.5 3.5 7.55.5
4.5 6.5 8.5
AMPLITUDE I M BALANCE ( dB)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-130
Figure 114. Amplitude Imbalance vs. RF Frequency at Various Temperatures,
LO Drive = 18 dBm, IF = 100 MHz
10
0
–10
5
–5
2.5 4.53.5 5.5 6.5 7.5 8.5
PHASE IMBALANCE ( Degrees)
RF FREQ UE NCY ( GHz)
+85°C
+25°C
–40°C
14353-131
Figure 115. Phase Imbalance vs. RF Frequency at Various Temperatures,
LO Drive = 18 dBm, IF = 100 MHz
4
3
1
–1
–2
2
0
–3
–42.5 3.5 7.55.54.5 6.5 8.5
AMPLITUDE I M BALANCE ( dB)
RF FREQ UE NCY ( GHz)
20dBm
18dBm
16dBm
14dBm
14353-132
Figure 116. Amplitude Imbalance vs. RF Frequency at Various LO Drives,
IF = 100 MHz, TA = 25°C
10
0
–10
5
–5
2.5 4.53.5 5.5 6.5 7.5 8.5
PHASE IMBALANCE ( Degrees)
RF FREQ UE NCY ( GHz)
14353-133
20dBm
18dBm
16dBm
14dBm
Figure 117. Phase Imbalance vs. RF Frequency at Various LO Drives,
IF = 100 MHz, TA = 25°C
Data Sheet HMC8193
Rev. B | Page 29 of 36
SPURIOUS AND HARMONICS PERFORMANCE
All M × N spur data captured with the 90° hybrid attached.
Downconverter M × N Spurious Outputs
Mixer spurious products are measured in dBc from the IF output
power level, unless otherwise specified. Spur values are (M × RF) −
(N × LO).
IF = 100 MHz, RF = 2500 MHz, LO = 2600 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0
1
2
3
4
M × RF
0 Not applicable 0 34 33 47
1 22 0 29 41 46
2 84 69 73 70 85
3 84 82 89 69 87
4 82 83 79 89 92
IF = 100 MHz, RF = 5500 MHz, LO = 5600 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × RF
0 Not applicable 9 35 29 48
1 23 0 53 47 52
2 81 68 69 70 81
3 80 82 84 67 80
4 77 80 79 83 91
IF = 100 MHz, RF = 8500 MHz, LO = 8600 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × RF
0 Not applicable 1 30 35 48
1 15 0 53 69 57
2 76 76 72 78 76
3 70 77 79 89 77
4 67 72 76 80 87
IF = 1000 MHz, RF = 2500 MHz, LO = 3500 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × RF
0 Not applicable −6 +22 +19 +33
1 +11 +0 +32 +36 +43
2 +74 +55 +77 +69 +72
3 +73 +68 +65 +59 +76
4 +71 +74 +59 +65 +68
IF = 1000 MHz, RF = 5500 MHz, LO = 6500 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × RF
0 Not applicable 2 19 13 35
1 12 0 31 38 40
2
71
61
65
64
70
3 68 70 76 67 71
4 64 68 69 77 73
IF = 1000 MHz, RF = 8500 MHz, LO = 9500 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × RF
0
Not applicable
−3 +19 +12 +32
1 +6 +0 +35 +63 +51
2 +66 +69 +62 +67 +63
3 +59 +66 +70 +67 +66
4 +59 +60 +66 +70 +68
IF = 3500 MHz, RF = 2500 MHz, LO = 6000 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × RF
0 Not applicable 4 36 13 52
1
20 0 49 60 44
2 74 61 80 87 81
3 87 78 87 91 88
4
92 94 97 92 88
IF = 3500 MHz, RF = 5500 MHz, LO = 9000 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × RF
0 Not applicable 7 23 28 41
1 14 0 37 55 56
2 85 91 88 81 83
3 88 90 89 93 87
4 87 88 93 93 85
IF = 3500 MHz, RF = 8500 MHz, LO = 12,000 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × RF
0 Not applicable 20 +5 +7 +20
1 10 +0 +38 +61 +54
2 +60 +69 +64 +64 +61
3
+61
+61
+70
+64
+63
4 +54 +63 +53 +34 +62
HMC8193 Data Sheet
Rev. B | Page 30 of 36
Upconverter M × N Spurious Outputs
Mixer spurious products are measured in dBc from the RF output
power level, unless otherwise specified. Spur values are (M × IF) −
(N × LO).
IF = 100 MHz, RF = 2500 MHz, LO = 2600 MHz, RF power =
−10 dBm, and LO power = +18 dBm..
N × LO
0 1 2 3 4
M × IF
0 Not applicable 10 9 24 20
1 27 0 15 10 29
2 75 53 47 61 61
3 79 59 72 57 76
4 93 90 92 89 92
IF = 100 MHz, RF = 5500 MHz, LO = 5600 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × IF
0 Not applicable 19 20 23 40
1 25 0 50 26 44
2 75 54 70 81 78
3 89 69 85 84 85
4 94 94 89 87 86
IF = 100 MHz, RF = 8500 MHz, LO = 8600 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × IF
0 Not applicable −2 +16 +18 +19
1 20 +0 +31 +35 +46
2 67 +50 +55 +67 +75
3 77 +70 +81 +79 +78
4 92 +86 +81 +80 +74
IF = 1000 MHz, RF = 2500 MHz, LO = 3500 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × IF
0 Not applicable 12 11 23 34
1 13 0 25 35 46
2 57 48 63 70 80
3 83 91 79 65 82
4 77 91 84 67 83
IF = 1000 MHz, RF = 5500 MHz, LO = 6500 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × IF
0 Not applicable 13 25 33 41
1 11 0 44 31 39
2
63 40 69 64 75
3 84 68 80 78 75
4 84 89 82 79 76
IF = 1000 MHz, RF = 8500 MHz, LO = 9500 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × IF
0
Not applicable
−3 +24 +21 +34
1 +8 0 +45 +36 +36
2 +58 +37 +59 +63 +66
3 +70 +70 +75 +69 +65
4 +80 +80 +75 +70 +68
IF = 3500 MHz, RF = 2500 MHz, LO = 6000 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × IF
0 Not applicable 20 25 22 29
1
8 0 33 43 41
2 67 71 62 75 70
3 87 79 80 79 88
4
85 91 95 97 92
IF = 3500 MHz, RF = 5500 MHz, LO = 9000 MHz, RF power =
−10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × IF
0 Not applicable −5 +17 +42 +19
1 +6 0 +40 +37 +49
2 +62 +67 +67 +88 +73
3 +91 +82 +80 +79 +84
4 +86 +94 +94 +89 +88
IF = 3500 MHz, RF = 8500 MHz, LO = 12,000 MHz, RF power =
10 dBm, and LO power = +18 dBm.
N × LO
0 1 2 3 4
M × IF
0 Not applicable −1 +12 +5 +7
1 4 0 +29 +58 +59
2 +37 +44 +62 +71 +60
3
+53 +69 +72 +70 +58
4 +70 +79 +74 +72 +65
Data Sheet HMC8193
Rev. B | Page 31 of 36
LO Harmonics
LO drive = 18 dBm and all values in are in dBc below the input
LO level measured at the RF port.
Table 5. Harmonics of LO
N × LO Spur at RF Port
LO Frequency (GHz)
1
2
3
4
2.5 50 45 61 66
3.5
47
46
56
71
4.5 50 63 65 60
5.5 52 68 61 69
6.5 50 66 66 73
7.5 49 63 69 62
8.5 40 59 59 81
HMC8193 Data Sheet
Rev. B | Page 32 of 36
THEORY OF OPERATION
The HMC8193 is a passive, wideband, I/Q, MMIC mixer that
can be used as an image rejection mixer or as a single-sideband
upconverter for transmitter operations. With an RF and LO
range of 2.5 GHz to 8.5 GHz, as well as an IF bandwidth of dc to
4 GHz, the HMC8193 is ideal for applications requiring wide
frequency range, excellent RF performance, and a simple design
that includes a few components and a small PCB footprint. A single
HMC8193 can replace multiple narrow-band mixers in a design.
The inherent I/Q architecture of the HMC8193 offers excellent
image rejection and sideband rejection, thereby eliminating the
need for expensive filtering of unwanted sidebands. The double
balanced architecture of the mixer also provides excellent LO to
RF and LO to IF isolation and reduces the effect of LO leakage
to ensure signal integrity.
The HMC8193 does not require any dc power sources because
it is a passive mixer. The device offers a lower noise figure than
an active mixer, ensuring superior dynamic range for high
performance and precision applications.
The HMC8193 is fabricated on a GaAs MESFET process and
uses Analog Devices mixer cells and a 90° hybrid. The HMC8193 is
available in a compact, 4 mm × 4 mm, 24-terminal LCC package
and operates over a −40°C to +85°C temperature range. An
evaluation board for the HMC8193 is also available from
Analog Devices.
For both upconversion and downconversion, an external 90°
hybrid is required. See the Applications Information section for
information regarding interfacing with an external 90° hybrid
Data Sheet HMC8193
Rev. B | Page 33 of 36
APPLICATIONS INFORMATION
Figure 118 shows the typical application circuit for the
HMC8193. To select the appropriate sideband, an external 90°
hybrid is required. For applications not requiring operation to
dc, use an off-chip dc blocking capacitor. For applications that
require the LO signal at the output to be suppressed, use a bias
tee/RF choke as shown in Figure 118. Ensure that the source/
sink current used for LO suppression is less than 6 mA for each
IF port; otherwise, device damage may occur. The common-
mode voltage for each IF port is 0 V.
To se lect the upper sideband when using as an upconverter,
connect the IF1 pin to the 90° port of the hybrid, and connect
the IF2 pin to the 0° port of the hybrid. To select the lower
sideband, connect IF1 to the 0° port of the hybrid and IF2 to the
90° port of the hybrid. The input is from the sum port of the
hybrid and the difference port is 50 Ω terminated.
To select the upper sideband (low-side LO) when using as a
downconverter, connect the IF1 pin to the 0° port of the hybrid,
and connect the IF2 pin to the 90° port of the hybrid. To select
the lower sideband (high-side LO), connect the IF1 pin to the
90° port of the hybrid and IF2 to the 0° port of the hybrid. The
output is from the sum port of the hybrid, and the difference
port is 50 Ω terminated.
14353-134
50Ω IF
HMC81 93 EVALUATION BOARD
SUPPLY
FOR IF1 SUPPLY
FOR IF2
BIAS TEE/
DC FEED FOR IF2
BIAS TEE/
DC FEED FOR IF1 DC BLOCKING
CAPACITORS
EXTERNAL
90° HY BRID
NOTES
1. DASHE D S E CTI ONS ARE OPTIONAL AND M E ANT FOR L O NUL LING.
13
1
3
4
2
7
RF
5
6
14
15
LO
16
17
18
8
9
IF1
10
11
IF2
12 19
20
21
22
23
24
Figure 118. Typical Application Circuit
HMC8193 Data Sheet
Rev. B | Page 34 of 36
SOLDERING INFORMATION AND RECOMMENDED
LAND PATTERN
Figure 119 and Figure 120 show the recommended land pattern
and solder stencil for the HMC8193, respectively. The HMC8193
is contained in a 4 mm × 4 mm, 24-terminal, ceramic, LCC
package, which has an exposed ground pad (EP). This pad is
internally connected to the ground of the chip. To minimize
thermal impedance and ensure electrical performance, solder
the pad to the low impedance ground plane on the PCB. To
further reduce thermal impedance, it is recommended that the
ground planes on all layers under the pad be stitched together
with vias.
The land pattern on the HMC8193 evaluation board provides a
simulated thermal resistance (θJA) of 120°C/W
.010" REF
.030"
MASK O P E NING .098" SQUARE M AS K OPENING
.020 × 45" CHAM FER FOR P IN 1
.106" SQUARE
GRO UND P AD
.116"
MASK
OPENING
PIN 1 .0197"
[0.50]
.034"
TYPICAL
VIA
SPACING
PAD SI ZE
.026" × .010"
ᶲ .010"
TYPICAL VIA
GRO UND P AD
SOLDERMASK .004" MASK/ME TAL OVE RLAP
.178" SQUARE
.010" MIN MAS K WIDTH
14353-135
Figure 119. Evaluation Board Land Pattern for the HMC8193 Package
0.020
TYP
0.008
TYP
0.019
TYP
0.024
TYP
0.094 0.176
SQUARE
0.017
0.094
R0.004
TYP
14353-136
Figure 120. Solder Stencil for the HMC8193 Package on the HMC8193 Evaluation Board
Data Sheet HMC8193
Rev. B | Page 35 of 36
EVALUATION BOARD INFORMATION
The EV1HMC8193LC4 evaluation PCB used in the application
must use RF circuit design techniques. Signal lines must have
50 Ω impedance and connect the package ground leads and
exposed pad directly to the ground plane, similar to what is
shown in Figure 119. Use a sufficient number of via holes to
connect the top and bottom ground planes. The evaluation
circuit board shown in Figure 121 is available from Analog
Devices upon request.
14353-137
Figure 121. EV1HMC8193LC4 Evaluation PCB, Top Layer
Table 6. Bill of Materials for the EV1HMC8193LC41 Evaluation PCB
Quantity
Reference Designator
Description
Manufacturer
Part Number
1 Not applicable PCB, EV1HMC8193LC42 Analog Devices 109996-1
2 J1, J2 PCB mount SMA RF connector SRI Connector Gage Co. 21-146-1000-01
2 J3, J4 PCB mount SMA connector Johnson SMA Connector 142-0701-851
1 U1 Device under test (HMC8193) Analog Devices HMC8193
1 Reference this number when ordering the evaluation PCB.
2 The circuit board material is Rogers 4350.
HMC8193 Data Sheet
Rev. B | Page 36 of 36
OUTLINE DIMENSIONS
12
0.50
BSC
2.50 REF
BOTTOM VIEW
TOP VIEW
1
24
7
13
18 19
6
02-27-2017-B
0.36
0.30
0.24
EXPOSED
PAD
PKG-004840
PIN 1
INDICATOR
4.05
3.90 SQ
3.75
3.10 BSC
FOR PRO P E R CONNECT IO N OF
THE EXPOSED PAD, REFER TO
THE PIN CO NFIGURAT ION AND
FUNCTION DES CRI P TI ONS
SECTION OF THIS DATA SHEET.
2.60
2.50 SQ
2.40
PIN 1
0.32
BSC
0.08
BSC
SIDE VIEW
1.00
0.90
0.80
SEATING
PLANE
Figure 122. 24-Terminal Ceramic Leadless Chip Carrier [LCC]
(E-24-1)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range
Package Body
Material Lead Finish Package Description MSL Rating2
Package
Option
HMC8193LC4 −40°C to +85°C Alumina Ceramic Gold over Nickel 24-Terminal LCC MSL3 E-24-1
HMC8193LC4TR −40°C to +85°C Alumina Ceramic Gold over Nickel 24-Terminal LCC MSL3 E-24-1
HMC8193LC4TR-R5 −40°C to +85°C Alumina Ceramic Gold over Nickel 24-Terminal LCC MSL3 E-24-1
EV1HMC8193LC4 Evaluation PCB Assembly
1 The HMC8193LC4, the HMC8193LC4TR, and the HMC8193LC4TR-R5 are RoHS compliant parts.
2 See the Absolute Maximum Ratings section.
©20172018 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D14353-0-5/18(B)