2.5 GHz to 8.5 GHz, I/Q Mixer
Data Sheet
Rev. B Document Feedback
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FEATURES
Passive I/Q mixer
RF and LO range: 2.5 GHz to 8.5 GHz
Wide IF range: dc to 4 GHz
Single-ended RF, LO, and IF
Conversion loss (downconverter): 9 dB (typical)
Image rejection (downconverter): 25 dBc (typical)
SSB noise figure (downconverter): 11.5 dB (typical)
Input IP3 (downconverter): 20 dBm (typical)
Input P1dB compression point (downconverter): 13 dBm
(typical)
Input IP2 (downconverter): 58 dBm (typical)
RF to IF isolation (downconverter): 22 dB (typical)
LO to RF isolation (downconverter): 48 dB (typical)
LO to IF isolation (downconverter): 38 dB (typical)
Amplitude balance (downconverter): ±0.5 dB (typical)
Phase balance (downconverter): ±5° (typical)
RF return loss: 13 dB (typical)
LO return loss 13 dB (typical)
IF return loss: 17 dB (typical)
Exposed pad, 4 mm × 4 mm, 24-terminal, ceramic
LCC package
APPLICATIONS
Test and measurement instrumentation
Military, aerospace, and radar
Direct conversion receivers
FUNCTIONAL BLOCK DIAGRAM
13
1
3
4
2
7
NIC
NIC
GND
RF
5
6
GND
NIC NIC
14
GND
GND
PACKAGE
BASE
15
LO
16
GND
17
NIC
18
NIC
NIC
8
NIC
9
IF1
10
NIC
11
IF2
12 19
GND NIC
20
NIC
21
NIC
22
NIC
23
NIC
24
NIC
14353-001
HMC8193
Figure 1.
GENERAL DESCRIPTION
The HMC8193 is a passive, in phase/quadrature (I/Q), monolithic
microwave integrated circuit (MMIC) mixer that can be used
either as an image rejection mixer for receiver operations, or as
a single-sideband upconverter for transmitter operations from
2.5 GHz to 8.5 GHz. The inherent I/Q architecture of the
HMC8193 offers excellent image rejection and thereby eliminates
the need for expensive filtering of unwanted sidebands. The
mixer also provides excellent local oscillator (LO) to radio
frequency (RF) and LO to intermediate frequency (IF) isolation
and reduces the effect of LO leakage to ensure signal integrity.
Being the HMC8913 is a passive mixer, it does not require any
dc power sources. The device offers a lower noise figure than an
active mixer, ensuring superior dynamic range for high
performance and precision applications.
The HMC8193 is fabricated on a gallium arsenide (GaAs),
metal semiconductor field effect transistor (MESFET) process
and uses Analog Devices, Inc., mixer cells and a 90° hybrid. It is
available in a compact, 4 mm × 4 mm, 24-lead LCC package
and operates over the −40°C to +85°C temperature range. An
evaluation board for this device is also available.