1N5391 Thru 1N5399 1.5 AMP PLASTIC SILICON RECTIFIER Mi FEATURES Rating to 1000V PRV Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with freon, alcohol, chlorothene and similar solvents e UL recognized 94V-O plastic material Mi Mechanical Data e Case: JEDEC DO-15 e Terminals: Axial leads, solderable per MIL-STD-202, Method 208 e Polarity: Color band denotes cathode e Weight: 0.012 ounce, 0.3 grams e Mounting Position: Any Mi Maximum Ratings & Characteristics Mi Outline Drawing DO-15 | f 140 (3.6) SIA. 1.0 (25,4) . MIN 034 (.9) 028 (,7) DIA. 1 n $+ 4 || Ly 300 (7.6) 230 (5 8) | f 0 (25 4) MIN 1 Dimensions in inches and (millimeters) Ratings at 25 C ambient temperature unless otherwise specified Single phase, half wave, 6OHz, resistive or inductive load For capacitive load, derate current by 20% 1N5391)1N5392/1N5393/1N5394/1N5395/1N5396/1N5397/1N5398/1N5399| Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 500 600 800 1000 Vv Maximum RMS Voltage VRMs 35 70 140 210 280 350 420 560 700 Vv Maximum DC Blocking Voltage Voc 50 100 200 300 400 500 600 800 | 1000 | V Maximum Average Forward @TL=70C lav) 15 A Rectified Current, .500" (12.7mm) Lead Length Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave lFsM 50 A Superimposed On Rated Load Maximum Forward Voltage At 1.54 DC VF 1.1 Vv Maximum DC Reverse Current @ TA = 25C Ir 5 pA At Rated DC Blocking Voltage @Ta= 150C 50 Typical Junction Capacitance (Note 1) Cy 20 pF Typical Thermal Resistance (Note 2) RthJa 26 C/W Operating Temperature Range Ts -65 to +175 C Storage Temperature Range TstG -65 to +175 C Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC 2. Thermal resistance Junction to Ambient Collmer Semiconductor, Inc.