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©2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1
RFP70N06
N-Channel Power MOSFET
60V, 70A, 14 mΩ
These are N -Channel powe r MO SFET s m an ufactur ed u sin g
the MegaFET proc es s. This proc es s, which uses fea ture
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
s witchi ng regulato rs, s witch ing con v erters , motor d rivers a nd
rela y driv ers. These tr ansistors ca n be operated direc tly from
integrated circuits.
Formerly developmental type TA78440.
Features
• 70A, 60V
•r
DS(on) = 0.014Ω
• Temperature Compensated PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
•175
oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
RFP70N06 TO-220AB RFP70N06
NOTE: When ordering use the ent ire part number. Add the suffix 9A to
obtain the TO-263AB v ariant in ta pe an d reel, e. g. RF1 S70N0 6SM9A.
G
D
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Data Sheet September 2013
©2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP70N06 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DSS 60 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . .VDGR 60 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulse d D ra in Curr e n t (N o te 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 70
Re fe r to Pe ak Curre n t Curve A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Singl e P u l se Avalanch e R a t in g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve A
Powe r Dis sipat io n . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
1.0 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL
P ackage Body for 10s , See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
CAUTION: Str esses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess onl y rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 60 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (F igure 10) 2 - 4 V
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V - - 1 µA
VDS = 0.8 x Rated BVDSS, TC = 150oC--25µA
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 70A, VGS = 10V (Figure 9) - - 0.014 Ω
Turn-On Time t(ON) VDD = 30V, ID ≈ 70A, RL = 0.43Ω,
VGS = 10V, RGS = 2.5Ω
(Figure 13)
- - 190 ns
Turn-On Delay Time td(ON) -10- ns
Rise Time tr- 137 - ns
Turn-Off Delay Time td(OFF) -32- ns
Fall Ti me tf-24- ns
Turn-Off Time t(OFF) - - 73 ns
Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 48V, ID = 70A,
RL = 0.68Ω
Ig(REF) = 2.2mA
(Figure 13)
- 120 156 nC
Gate Charge at 10V Qg(10) VGS = 0V to 10V - 65 85 nC
Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 5.0 6.5 nC
Input Capacitance CISS VDS = 25V, V GS = 0V , f = 1MH z
(Figure 12) - 2250 - pF
Output Capacitance COSS - 792 - pF
Reverse Transfer Capacitance CRSS - 206 - pF
Thermal Resistance, Junction to Case RθJC --1.0
oC/W
Thermal Resistance, Junction to Ambient RθJA TO-220 - - 62 oC/W
-- - --
Sour ce to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage VSD ISD = 70A - 1.5 V
Reverse Recovery Time trr ISD = 70A, dISD/dt = 100A/µs - 52 ns
NOTES:
2. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFP70N06
©2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1
Typical Performance Curves TC = 25oC, Unless Otherwise Specified
FIGURE 1. NORMALIZED PO WER DISSIPA TI ON vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRE NT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
00 25 50 75 100 175
0.2
0.4
0.6
0.8
1.0
1.2
125 150
30
10
025 50 75 100 125 150
50
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
70
175
40
20
60
80
1
0.1
0.01
10-5 10-4 10-3 10-2 10-1 100101
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.01
0.02
0.05
0.1
0.2
0.5
THERMAL IMPEDANCE
ZθJC, NORMALIZED
PDM
t1t2
SINGLE PULSE
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
100
10
1
110 100
OPE RATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
100µs
1ms
10ms
500
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
t, PULSE WIDTH (s)
5010-5 10-4 10-3 10-2 10-1 100101
100
IDM, PEAK CURRENT (A)
1000
FOR TEMPERATURES
ABO VE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 10V
II
25 175 TC
–
150
-----------------------
=
TC = 25oC
RFP70N06
©2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1
NOT E: Refer to Fairc hild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARA CTERISTICS FIGURE 9. NORMALIZED DRAIN T O SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD V OLTAGE vs
JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN T O SOURCE BREAKDO WN
VOLTAGE vs JUNCTION TEMPERAT URE
Typical Performance Curves TC = 25oC, Unless Otherwise Specified (Continued)
0.01 0.1
100
300
10
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R ≠ 0
tAV = (L/R ) ln [(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = 25oC
STARTING TJ = 150oC
110 0
80
0123 5
120
160
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAG E (V )
VGS = 7V
VGS = 10V
200
4
VGS = 5V
VGS = 4.5V
VGS = 20V VGS = 8V
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
VGS = 6V
0468102
0
40
80
120
IDS(ON), DRAIN TO SOURCE CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
160 -55oC25oC
200
175oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
0
0.5
1
1.5
-80 -40 0 40 80 120 160
NORMALIZED DRAIN TO SOURCE
TJ, JUNCTION TEMPERATURE (oC) 200
2
2.5
VGS = 10V, ID = 70A
PULSE DURATION = 250µs
ON RESISTANCE
DUTY CYCLE = 0.5% MAX
-80 -40 0 40 80 120 160
0
0.5
1.0
1.5
2.0
NORMALIZED GATE
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATU RE (oC) 200
VGS = VDS, ID = 250µA2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
200
ID = 250µA
RFP70N06
©2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1
FIGURE 12. CAPACITANCE vs DRAIN T O SOURCE VOLTAGE
NOT E: Refer to Fairc hild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZE D SWITCHING W A V EFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY W AVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. SWITCHING WAVEFORMS
Typical Performance Curves TC = 25oC, Unless Otherwise Specified (Continued)
5000
1000
00 5 10 15 20 25
C, CAPACITANCE (pF)
4000
VDS, DRAIN TO SOURCE VO LTAGE (V)
CISS
COSS
CRSS
3000
2000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
60
45
30
15
0
10
7.5
5
2.5
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
IG(REF)
IG(ACT)
20 IG(REF)
IG(ACT)
80
t, TIME (µs)
RL = 0.86Ω
IG(REF) = 2.2mA
VGS = 10V
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
VDD = BVDSS
VDD = BVDSS
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PE AK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RGS
DUT
+
-VDD
VDS
VGS
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
RFP70N06
©2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1
FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORM
Test Circuits and Waveforms (Continued)
RL
VGS +
-
VDS
VDD
DUT
Ig(REF)
VDD
Qg(TH)
VGS = 2V
Qg(10)
VGS = 10V
Qg(TOT)
VGS = 20V
VDS
VGS
Ig(REF)
0
0
RFP70N06
©2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1
PSPICE Elec trical Model
.SUBCKT RFG70N06 2 1 3 ; rev 3/20/92
CA 12 8 5.56e- 9
CB 15 14 5.30e- 9
CIN 6 8 2.63e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 65.18
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e- 9
LGATE 1 9 3.10e-9
LSOURCE 3 7 1.82e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 4.66e-3
RLDRAIN 2 5 10
RGATE 9 20 1.21
RLGATE 1 9 31
RIN 6 8 1e9
RSOURCE 8 7 RDS MOD 3.92e-3
RLSOURCE 3 7 18.2
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.605
.MODEL DBDMOD D (IS = 7.91e-12 RS = 3.87e-3 TRS1 = 2.71e-3 TRS2 = 2.50e-7 CJO = 4.84e-9 TT = 4.51e-8)
.MODEL DBKMOD D (RS = 3.9e-2 TRS1 =1.05e-4 TRS2 = 3.11e-5)
.MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (V TO = 3.46 KP = 47 IS = 1e-30 N = 10 TO X = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 8.46e-4 TC2 = -8.48e-7)
.MODEL RDSMOD RES (T C1 = 2.23e-3 TC2 = 6.56e-6)
.MODEL RVTOMOD RES (TC1 = -3.29e-3 TC2 = 3.49e-7)
.MODEL S1AMOD VSWITCH ( RON = 1e-5 ROFF = 0.1 VON = -8.35 VOFF= -6.35)
.MODEL S1BMOD VSWITCH ( RON = 1e-5 ROFF = 0.1 VON = -6.35 VOFF= -8.35)
.MODEL S2AMOD VSWITCH ( RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 3.0)
.MODEL S2BMOD VSWITCH ( RON = 1e-5 ROFF = 0.1 VON = 3.0 VOFF= -2.0)
.ENDS
NOT E: For fur th er discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
1
GATE
LGATE RGATE
EVTO
+
12 13
814
13
13
15
S1A
S1B
S2A
S2B
CA CB
EGS EDS
RIN CIN
MOS1
MOS2
DBREAK
EBREAK
DBODY
LDRAIN DRAIN
RSOURCE
LSOURCESOURCE
RBREAK
RVTO
VBAT
IT
VTO
ESG
DPLCAP
6
10 5
16
21
11
17
18
8
14
73
17 18
19
2
++
+
+
+
+
20
RDRAIN
ESCL
RSCL1RSCL2
51
50
+
9
RLGATE
RLDRAIN
RLSOURCE
5
51
18
8
6
8
-
-
-
-
5
8
6
8
--
RFP70N06
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
SerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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Rev. I66
tm
®
RFP70N06
©2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1
www.onsemi.com
1
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