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Page <2> V1.003/01/13
General Purpose Transistor
Electrical Characteristics (Ta = 25°C unless otherwise specied)
Parameters Symbol Test Condition Rating Unit
Collector-EmitterVoltage VCEO IC=2mA,IB = 0 >45
VCollector-BaseVoltage VCBO IC=100µA,IE = 0 >50
Emitter-BaseVoltage VEBO IE=100µA,IC = 0 >5
Collector-CutoffCurrent ICBO
ICES
VCB=30V,IE = 0
Tj=150°C
VCB=30V,IE = 0
VCE=80V,VBE = 0
<15
<5
<15
nA
µA
nA
Collector-CutoffCurrent ICES
TJ=125°C
VCE=80V,VBE = 0 <4 µA
DCCurrentGain hFE
IC=10µA,VCE=5V BC557B
BC557B
IC=100mA,VCE=5V BC557B
Typical 150
200-450
Typical 200
-
CollectorEmitterSaturationVoltage VCE(Sat)
IC=10mA,IB = 0.5mA
IC=100mA,IB = 5mA
<0.30
<0.65
V
BaseEmitterSaturationVoltage VBE(sat)
IC=10mA,IB = 0.5mA
IC=100mA,IB = 5mA
Typical 0.70
Typical 0.90
BaseEmitteronVoltage VBE(on)
IC=2mA,VCE=5V
IC=10mA,VCE=5V
0.55-0.70
<0.82
Dynamic Characteristics
Transition Frequency fT
IC=10mA,VCE=5V
f=100MHz Typical 150 MHz
CollectoroutputCapacitance Ccbo VCB=10V,f=1MHz <6
pF
EmitterInputCapacitance Cib VEB=0.5V,f=1MHz Typical 9
Noise Figure NF
IC=0.2mA,VCE=5V
RS=2kΩ,f=1kHz
B=200Hz
<10 dB
SmallSignalCurrentGain hfe IC=2mA,VCE=5V-BC557B Typical 330 -
InputImpedance hie IC=2mA,VCE=5V-BC557B 3.2-8.5 KΩ
VoltageFeedbackRatio hre IC=2mA,VCE=5V-BC557B Typical 2 ×10-4
OutputAdmittance hoe IC=2mA,VCE=5V-BC557B <60 umhos