1
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
PG-TO247
tab
PG-TO220
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation
whilerepresentingacostappealingalternativecomparedtostandard
MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits
ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.
Extremelylowswitchingandconductionlossesmakeswitching
applicationsevenmoreefficient,morecompact,lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,LCD&PDPTVandLighting.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 550 V
RDS(on),max 0.19 Ω
ID24.8 A
Qg.typ 47.2 nC
ID,pulse 63 A
Eoss@400V 4.42 µJ
Type/OrderingCode Package Marking RelatedLinks
IPW50R190CE PG-TO 247
IPP50R190CE PG-TO 220 5R190CE see Appendix A
2
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
24.8
15.7 ATC = 25°C
TC = 100°C
Pulsed drain current2) ID,pulse - - 63 A TC=25°C
Avalanche energy, single pulse EAS - - 339 mJ ID =7.7A; VDD = 50V
Avalanche energy, repetitive EAR - - 0.51 mJ ID =7.7A; VDD = 50V
Avalanche current, repetitive IAR - - 7.7 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V
Gate source voltage VGS -20
-30
-
-
20
30 Vstatic;
AC (f>1 Hz)
Power dissipation (non FullPAK)
TO-247, TO-220 Ptot - - 152 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 150 °C -
Mounting torque (non FullPAK) TO-247,
TO-220 - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current IS- - 17.6 A TC=25°C
Diode pulse current2) IS,pulse - - 63.0 A TC = 25°C
Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs
Maximum diode commutation speed3) dif/dt - - 500 A/µsVDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs
2Thermalcharacteristics
Table3Thermalcharacteristics(nonFullPAK)TO-247,TO-220
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 0.82 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
1) Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
4
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.51mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=500V,VGS=0V,Tj=25°C
VDS=500V,VGS=0V,Tj=150°C
Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.17
0.45
0.19
-ΩVGS=13V,ID=6.2A,Tj=25°C
VGS=13V,ID=6.2A,Tj=150°C
Gate resistance RG-3-Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1137 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 68 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related1) Co(er) - 56 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related2) Co(tr) - 251 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 9.5 - ns VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
Rise time tr- 8.5 - ns VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
Turn-off delay time td(off) - 54 - ns VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
Fall time tf- 7.5 - ns VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 6.1 - nC VDD=400V,ID=7.7A,VGS=0to10V
Gate to drain charge Qgd - 24.5 - nC VDD=400V,ID=7.7A,VGS=0to10V
Gate charge total Qg- 47.2 - nC VDD=400V,ID=7.7A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=7.7A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
5
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.85 - V VGS=0V,IF=7.7A,Tf=25°C
Reverse recovery time trr - 280 - ns VR=400V,IF=7.7A,diF/dt=100A/µs
Reverse recovery charge Qrr - 3.2 - µC VR=400V,IF=7.7A,diF/dt=100A/µs
Peak reverse recovery current Irrm - 21.5 - A VR=400V,IF=7.7A,diF/dt=100A/µs
6
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 40 80 120 160
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
7
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
Typ.outputcharacteristicsTj=25°C
VDS[V]
ID[A]
0 5 10 15 20
0
10
20
30
40
50
60
70
80
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Typ.outputcharacteristicsTj=125°C
VDS[V]
ID[A]
0 5 10 15 20
0
5
10
15
20
25
30
35
40
45
50
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 10 20 30 40 50
0.2
0.3
0.4
0.5
0.6
0.7
0.8
5 V
5.5 V
6 V
6.5 V
7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150 175
0.0
0.1
0.2
0.3
0.4
0.5
0.6
98%
typ
RDS(on)=f(Tj);ID=6.2A;VGS=13V
8
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
Typ.transfercharacteristics
VGS[V]
ID[A]
0246810
0
10
20
30
40
50
60
70
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Typ.gatecharge
Qgate[nC]
VGS[V]
0 10 20 30 40 50
0
1
2
3
4
5
6
7
8
9
10
400 V
120 V
VGS=f(Qgate);ID=7.7Apulsed;parameter:VDD
Avalancheenergy
Tj[°C]
EAS[mJ]
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
EAS=f(Tj);ID=7.7A;VDD=50V
Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
440
460
480
500
520
540
560
580
VBR(DSS)=f(Tj);ID=1mA
9
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0
1
2
3
4
5
6
7
Eoss=f(VDS)
Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
102
125 °C
25 °C
IF=f(VSD);parameter:Tj
10
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trr
tFtS
Q
FQ
S
dIF/ dt
dIrr / dt
VDS(peak)
Q
rr = QF+ Q
S
trr =tF+tS
VDS
IF
VDS
IF
Rg1
Rg2
Rg1 = Rg2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
11
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
6PackageOutlines
Figure1OutlinePG-TO247,dimensionsinmm/inches
12
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
Figure2OutlinePG-TO220,dimensionsinmm/inches
13
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
7AppendixA
Table11RelatedLinks
•IFXCoolMOSWebpage:www.infineon.com
•IFXDesigntools:www.infineon.com
14
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.2,2016-06-13Final Data Sheet
RevisionHistory
IPW50R190CE, IPP50R190CE
Revision:2016-06-13,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2012-08-24 Release of final version
2.1 2015-08-20 removal of TO-220FP
2.2 2016-06-13 Updated ID ratings, Zth, SOA and Power dissipation curves
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.