IPW50R190CE,IPP50R190CE MOSFET 500VCoolMOSCEPowerTransistor PG-TO247 PG-TO220 tab CoolMOSTMisarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOSTMCEseriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse. Extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler. Drain Pin 2 Gate Pin 1 Features *ExtremelylowlossesduetoverylowFOMRdson*QgandEoss *Veryhighcommutationruggedness *Easytouse/drive *Pb-freeplating,Halogenfreemoldcompound *QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,LCD&PDPTVandLighting. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 0.19 ID 24.8 A Qg.typ 47.2 nC ID,pulse 63 A Eoss@400V 4.42 J Type/OrderingCode Package IPW50R190CE PG-TO 247 IPP50R190CE PG-TO 220 Final Data Sheet Marking 5R190CE 1 RelatedLinks see Appendix A Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 24.8 15.7 A TC = 25C TC = 100C - 63 A TC=25C - - 339 mJ ID =7.7A; VDD = 50V EAR - - 0.51 mJ ID =7.7A; VDD = 50V Avalanche current, repetitive IAR - - 7.7 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation (non FullPAK) TO-247, TO-220 Ptot - - 152 W TC=25C Operating and storage temperature Tj,Tstg -55 - 150 C - - - 60 Ncm M3 and M3.5 screws IS - - 17.6 A TC=25C Diode pulse current IS,pulse - - 63.0 A TC = 25C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25C, tcond<2s Maximum diode commutation speed3) dif/dt - - 500 A/s VDS=0...400V,ISD<=IS,Tj=25C, tcond<2s Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Mounting torque (non FullPAK) TO-247, TO-220 Continuous diode forward current 2) 2Thermalcharacteristics Table3Thermalcharacteristics(nonFullPAK)TO-247,TO-220 Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 0.82 C/W - Thermal resistance, junction - ambient RthJA - - 62 C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 C Tsold 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max <150C, Maximum Duty Cycle D = 0.5 Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.50 V VDS=VGS,ID=0.51mA - 10 1 - A VDS=500V,VGS=0V,Tj=25C VDS=500V,VGS=0V,Tj=150C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.17 0.45 0.19 - VGS=13V,ID=6.2A,Tj=25C VGS=13V,ID=6.2A,Tj=150C Gate resistance RG - 3 - f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 500 - Gate threshold voltage V(GS)th 2.50 Zero gate voltage drain current IDSS Gate-source leakage curent Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1137 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 68 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 56 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 251 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 9.5 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4 Rise time tr - 8.5 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4 Turn-off delay time td(off) - 54 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4 Fall time tf - 7.5 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 6.1 - nC VDD=400V,ID=7.7A,VGS=0to10V Gate to drain charge Qgd - 24.5 - nC VDD=400V,ID=7.7A,VGS=0to10V Gate charge total Qg - 47.2 - nC VDD=400V,ID=7.7A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=7.7A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2) Final Data Sheet 4 Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=7.7A,Tf=25C 280 - ns VR=400V,IF=7.7A,diF/dt=100A/s - 3.2 - C VR=400V,IF=7.7A,diF/dt=100A/s - 21.5 - A VR=400V,IF=7.7A,diF/dt=100A/s Min. Typ. Max. VSD - 0.85 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 160 150 1 s 140 130 10 s 101 120 110 100 s 90 ID[A] Ptot[W] 100 80 70 1 ms 10 ms 100 DC 60 50 10-1 40 30 20 10 0 0 40 80 120 10-2 160 100 101 TC[C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 s 101 10 s 100 0.5 ZthJC[K/W] ID[A] 100 s 100 1 ms 10 ms 0.2 0.1 10 DC -1 0.05 0.02 -1 10 0.01 single pulse 10-2 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE Typ.outputcharacteristicsTj=25C Typ.outputcharacteristicsTj=125C 80 50 45 70 20 V 20 V 10 V 40 60 10 V 35 8V 30 8V ID[A] ID[A] 50 40 7V 30 7V 25 20 6V 15 20 5.5 V 6V 10 5V 5.5 V 10 4.5 V 5 5V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Typ.drain-sourceon-stateresistance Drain-sourceon-stateresistance 0.8 0.6 0.7 0.5 5.5 V 0.6 5V 15 20 VDS[V] 6.5 V 6V 0.4 7V RDS(on)[] RDS(on)[] 98% 10 V 0.5 0.3 0.4 0.2 0.3 0.1 0.2 0 10 20 30 40 50 0.0 -50 typ -25 0 25 50 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 75 100 125 150 175 Tj[C] RDS(on)=f(Tj);ID=6.2A;VGS=13V 7 Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE Typ.transfercharacteristics Typ.gatecharge 70 10 25 C 9 60 8 50 120 V 7 400 V 6 ID[A] VGS[V] 40 30 150 C 5 4 3 20 2 10 1 0 0 2 4 6 8 0 10 0 10 20 VGS[V] 30 40 50 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=7.7Apulsed;parameter:VDD Avalancheenergy Drain-sourcebreakdownvoltage 360 580 340 320 560 300 280 260 540 240 200 VBR(DSS)[V] EAS[mJ] 220 180 160 140 520 500 120 480 100 80 60 460 40 20 0 0 25 50 75 100 125 150 175 440 -60 -20 Tj[C] 60 100 140 180 Tj[C] EAS=f(Tj);ID=7.7A;VDD=50V Final Data Sheet 20 VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE Typ.capacitances Typ.Cossstoredenergy 4 10 7 6 Ciss 5 2 10 Eoss[J] C[pF] 103 Coss 4 3 2 101 Crss 1 100 0 100 200 300 400 500 0 0 VDS[V] 100 200 300 400 500 VDS[V] C=f(VDS);VGS=0V;f=1MHz Eoss=f(VDS) Forwardcharacteristicsofreversediode 102 101 125 C IF[A] 25 C 100 10-1 0.4 0.6 0.8 1.0 1.2 1.4 VSD[V] IF=f(VSD);parameter:Tj Final Data Sheet 9 Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE 6PackageOutlines Figure1OutlinePG-TO247,dimensionsinmm/inches Final Data Sheet 11 Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE Figure2OutlinePG-TO220,dimensionsinmm/inches Final Data Sheet 12 Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE 7AppendixA Table11RelatedLinks * IFXCoolMOSWebpage:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.2,2016-06-13 500VCoolMOSCEPowerTransistor IPW50R190CE,IPP50R190CE RevisionHistory IPW50R190CE, IPP50R190CE Revision:2016-06-13,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2012-08-24 Release of final version 2.1 2015-08-20 removal of TO-220FP 2.2 2016-06-13 Updated ID ratings, Zth, SOA and Power dissipation curves TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.2,2016-06-13