TIP32C PNP EP I TAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2
www.unisonic.com.tw QW-R209-017,B
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -100 V
Emitter-Base Voltage VEBO -5 V
DC IC -3 A
Collector Current PULSE ICM -5 A
Base Current IB -1 A
Tc=25 40 W
Power Dissipation Ta=25 PD 2 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -40 ~ +150 ℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Emitter Sustaining Voltage* BVCEO I
C=-30mA,IB=0 -100 V
Collector Cutoff Current ICES V
CE=-100V, VBE=0 -200 µA
Collector Cutoff Current ICEO V
CE=-60V, IB=0 -0.3 mA
Emitter Cutoff current IEBO V
BE=-5V, Ic=0 -1 mA
Collector-Emitter Saturation Voltage* VCE(sat) I
C=-3A, IB=-375mA -1.2 V
Base-Emitter On Voltage* VBE(on) I
C=-3A, VCE=-4A -1.8 V
DC Current Gain* hFE IC=-1A, VCE=-4V
IC=-3A, VCE=-4V 25
10
50
Current Gain Bandwidth Product fT I
C=-0.5A,VCE=-10V, f=1MHz 3 MHz
*Pulse Test: PW<=300µs, Duty Cyle<=2%