MMBT4403 40V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data * * * * * * * * * * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401) Ideal for Medium Power Amplification and Switching Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability SOT23 Case: SOT23 UL Flammability Rating 94V-0 Case material: molded Plastic "Green" Compound Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.008 grams (Approximate) C B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 3) Product MMBT4403-7-F Notes: Marking K2T Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc.s "Green" Policy can be found on our website at http://www.diodes.com 3. For more packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 MMBT4403 Document Number: DS30058 Rev. 10 - 2 K2T = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) YM K2T 2012 Z Mar 3 Apr 4 2013 A May 5 Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D September 2011 (c) Diodes Incorporated MMBT4403 Maximum Ratings @TA = 25C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 4) Symbol VCBO VCEO VEBO IC Value -40 -40 -5.0 -600 Unit V V V mA Value 300 417 -55 to +150 Unit mW C/W C Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: Symbol PD RJA TJ, TSTG (Note 4) (Note 4) 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Typical Thermal Characteristics 1,000 400 IC, COLLECTOR CURRENT (mA) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 DC 100 PW = 100ms PW = 10ms 10 RJA = 417C/W 50 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature 0 25 MMBT4403 Document Number: DS30058 Rev. 10 - 2 2 of 6 www.diodes.com 1 0.1 1 10 100 VCE, COLLECTOR-EMITTER CURRENT (V) Fig. 2 SOA, Safe Operation Area September 2011 (c) Diodes Incorporated MMBT4403 Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL -40 -40 -5.0 -100 -100 V V V nA nA hFE 30 60 100 100 20 300 Collector-Emitter Saturation Voltage VCE(SAT) -0.40 -0.75 V Base-Emitter Saturation Voltage VBE(SAT) -0.75 -0.95 -1.30 V Cobo Cibo hie hre hfe hoe 1.5 0.1 60 1.0 8.5 30 15 8.0 500 100 pF pF k -4 x 10 S Current Gain-Bandwidth Product fT 200 MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf 15 20 225 30 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Note: Test Condition IC = -100A, IE = 0 IC = -1.0mA, IB = 0 IE = -100A, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100A, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA 5. Short duration pulse test used to minimize self-heating effect. MMBT4403 Document Number: DS30058 Rev. 10 - 2 3 of 6 www.diodes.com September 2011 (c) Diodes Incorporated MMBT4403 Typical Electrical Characteristics 0.5 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 10 0.3 T A = 150C 0.1 0 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current TA = 25C 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 100 1.0 VCE = 5V f = 1MHz 0.9 0.8 CAPACITANCE (pF) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) T A = 50C 0.2 1 TA = -50C 0.7 0.6 TA = 25C 0.5 Cibo 10 Cobo 0.4 TA = 150C 0.3 0.2 0.1 1 0.1 10 100 1 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics 1.6 1,000 VCE, COLLECTOR-EMITTER VOLTAGE (V) VCE = 5V fT, GAIN-BANDWIDTH PRODUCT (MHz) IC IB = 10 0.4 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current MMBT4403 Document Number: DS30058 Rev. 10 - 2 4 of 6 www.diodes.com 1.4 1.2 IC = 10mA IC = 1mA IC = 100mA I = 300mA C IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 1 0.1 10 100 IB,BASE CURRENT (mA) Fig. 8 Typical Collector Saturation Region 0.01 September 2011 (c) Diodes Incorporated MMBT4403 Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X MMBT4403 Document Number: DS30058 Rev. 10 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 5 of 6 www.diodes.com September 2011 (c) Diodes Incorporated MMBT4403 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2011, Diodes Incorporated www.diodes.com MMBT4403 Document Number: DS30058 Rev. 10 - 2 6 of 6 www.diodes.com September 2011 (c) Diodes Incorporated