MMBT4403-7 - Diodes - searchdatasheet.com

MMBT4403

Document Number: DS30058 Rev. 10 - 2 1 of 6

www.diodes.com September 2011

MMBT4403

40V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (MMBT4401)

• Ideal for Medium Power Amplification and Switching

• Lead Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• UL Flammability Rating 94V-0

• Case material: molded Plastic “Green” Compound

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.008 grams (Approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

MMBT4403-7-F K2T 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com

3. For more packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

SOT23

Device Symbol Top View

Pin-Out

K2T = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

C

E

B

K2T

YM

MMBT4403

Document Number: DS30058 Rev. 10 - 2 2 of 6

www.diodes.com September 2011

MMBT4403

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO -40 V

Collector-Emitter Voltage VCEO -40 V

Emitter-Base Voltage VEBO -5.0 V

Collector Current - Continuous (Note 4) IC -600 mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4) PD 300 mW

Thermal Resistance, Junction to Ambient (Note 4) RθJA 417 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch

Typical Thermal Characteristics

0

50

100

25 50 75 100 125 150 175 200

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N (mW)

D

T , AMBIENT TEMPERA TURE (°C)

Fig. 1 Power Dissipation vs. Ambient Temperature

A

150

200

250

300

350

0

R = 417 C/W

θ

JA

°

400

1

10

100

1,000

0.1 1 10 100

I,

C

O

LLE

C

T

O

R

C

U

R

EN

T

(mA)

C

V , COLLECTOR-EMITTER CURRENT (V)

Fi g. 2 SOA, Safe Ope r ati on Area

CE

DC

P = 100ms

W

P = 10ms

W

MMBT4403

Document Number: DS30058 Rev. 10 - 2 3 of 6

www.diodes.com September 2011

MMBT4403

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage V

(

BR

)

CBO -40 ⎯ V IC = -100μA, IE = 0

Collector-Emitter Breakdown Voltage V

(

BR

)

CEO -40 ⎯ V IC = -1.0mA, IB = 0

Emitter-Base Breakdown Voltage V

(

BR

)

EBO -5.0 ⎯ V IE = -100μA, IC = 0

Collector Cutoff Current ICEX ⎯ -100 nA

VCE = -35V, VEB

(

OFF

)

= -0.4V

Base Cutoff Current IBL ⎯ -100 nA

VCE = -35V, VEB

(

OFF

)

= -0.4V

ON CHARACTERISTICS (Note 5)

DC Current Gain hFE

30

60

100

20

⎯

300

⎯

IC = -100µA, VCE = -1.0V

IC = -1.0mA, VCE = -1.0V

IC = -10mA, VCE = -1.0V

IC = -150mA, VCE = -2.0V

IC = -500mA, VCE = -2.0V

Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.40

-0.75 V IC = -150mA, IB = -15mA

IC = -500mA, IB = -50mA

Base-Emitter Saturation Voltage VBE(SAT) -0.75

⎯ -0.95

-1.30 V IC = -150mA, IB = -15mA

IC = -500mA, IB = -50mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance Cobo ⎯ 8.5 pF

VCB = -10V, f = 1.0MHz, IE = 0

Input Capacitance Cibo ⎯ 30 pF

VEB = -0.5V, f = 1.0MHz, IC = 0

Input Impedance hie 1.5 15 kΩ VCE = -10V, IC = -1.0mA,

f = 1.0kHz

Voltage Feedback Ratio hre 0.1 8.0 x 10-4

Small Signal Current Gain hfe 60 500 ⎯

Output Admittance hoe 1.0 100 μS

Current Gain-Bandwidth Product fT 200 ⎯ MHz VCE = -10V, IC = -20mA,

f = 100MHz

SWITCHING CHARACTERISTICS

Delay Time td ⎯ 15 ns

VCC = -30V, IC = -150mA,

VBE(off) = -2.0V, IB1 = -15mA Rise Time t

r

⎯ 20 ns

Storage Time ts ⎯ 225 ns

VCC = -30V, IC = -150mA,

IB1 = IB2 = -15mA Fall Time tf ⎯ 30 ns

Note: 5.

Short duration pulse test used to minimize self-heating effect.

MMBT4403

Document Number: DS30058 Rev. 10 - 2 4 of 6

www.diodes.com September 2011

MMBT4403

Typical Electrical Characteristics

1

100

1,000

110

100 1,000

h, D

C

U

R

E

N

T

G

AI

N

FE

I , COLLECTOR CURRENT (mA)

Fig. 3 Typical DC Current Gain vs. Collector Current

C

10

110

100 1,000

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION VOLTAGE (V)

CE(SAT)

I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

C

0

0.1

0.2

0.3

0.4

0.5

T = 50°C

A

T = 25°C

A

T = 150°C

A

I

C

I

B

= 10

0.1 110 100

V , BASE -EMI

T

E

R

T

U

R

N-

O

N V

O

L

T

A

G

E (V)

BE(ON)

I , COLLECTOR CURRENT (mA)

Fig. 5 T y pical Base-Emitter Tu rn-On Voltage

vs. Collector Current

C

T = 25°C

A

T = -50°C

A

V = 5V

CE

T = 150°C

A

0.2

0.3

0.4

0.5

0.9

0.8

0.7

0.6

1.0

1

10

100

0.1 1 10 100

C

A

P

A

C

I

T

AN

C

E (p

F

)

V,

Typical

R

REVERSE VO LTAG E (V)

Fig . 6 Capacitance Charac te r istics

Cobo

Cibo

f = 1MHz

1

100

1,000

110 100

f,

G

AIN-BANDWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

I , COLLECTOR CURRENT (mA)

Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current

C

10

V = 5V

CE

I ,BASE CURRENT (mA)

Fig. 8 Typical Collector Saturation Region

B

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

V

O

L

T

A

G

E (V)

CE

0.001 0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1 110 100

I = 1mA

C

I = 10mA

C

I = 30mA

C

I = 100mA

C

I = 300mA

C

MMBT4403

Document Number: DS30058 Rev. 10 - 2 5 of 6

www.diodes.com September 2011

MMBT4403

Package Outline Dimensions

Suggested Pad Layout

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

A

M

JL

D

F

BC

H

K

G

K1

XE

Y

C

Z

MMBT4403

Document Number: DS30058 Rev. 10 - 2 6 of 6

www.diodes.com September 2011

MMBT4403

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR

PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other

changes without further notice to this doc ument and an y product described herein. Diodes Incorporat ed does not assu me any liability arising

out of the application or use of this document or any product descr ibed herein; neither does Diodes Incorporated convey any license under

its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such

applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are

represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales

channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall

indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising

out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and

markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the

express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in

the labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or s ystem whose failure to p erfo rm can be re asonabl y e xpected to cause

the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,

and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their

products and any use of Diodes I ncorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-

or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes

Incorporated and its representatives against any d amages arising out of the use of Diodes Incorpor ated products in such safety-critical, life

support devices or systems.

www.diodes.com