RB751S40 — Schottky Barrier Diodes
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
RB751S40 Rev. A2 1
September 2009
RB751S40
Schottky Barrier Diodes
Features
Low Forward Voltage Drop
Flat Lead, Surface Mount Device Under 0.70mm Height
Extremely Small Outline Plastic Package SOD523F
Moisture Level Sensitivity 1
Pb-free Versi on and RoHS Compliant
Matte Tin (Sn) Lead Finish
Green Mold Compound
Absolute Maximum Ratings * TA=25°C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol Parameter Value Units
VRRM Maximum Repetitive Reverse Voltage 40 V
IF(AV) Average Rectified Forward Current 30 mA
IFSM Non-Repetitive Peak Forward Current 500 mA
TJOperating Junction Temperature Range -55 to +125 °C
TSTG Storage Temperature Range -55 to +125 °C
Symbol Parameter Value Units
PDTotal Device Dissipation (TC=25°C) 200 mW
RθJA Thermal Resistance, Junction to Ambient 500 °C/W
Symbol Parameter Test Condition Min. Typ. Max. Units
BVRBreakdown Voltage IR=10μA30 V
IRReverse Leakage Current VR=30V 0.5 μA
VFForward Voltage IF=1mA 0.37 V
SOD-523F
Band Indicates Cathode
Cathode
ELECTRICAL SYMBOL
Anode
RB751S40 Marking : 4B
RB751S40 — Schottky Barrier Diodes
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
RB751S40 Rev. A2 2
Typical Performance Characteristics
RB751S40 — Schottky Barrier Diodes
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
RB751S40 Rev. A2 3
Typical Performance Characteristics (Continue)
RB751S40 — Schottky Barrier Diodes
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
RB751S40 Rev. A2 4
Physical Dimension
SOD-523F
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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Preliminary First Production
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The datasheet is for reference information only. Rev. I41
Mouser Electronics
Authorized Distributor
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RB751S40