Semiconductor Components Industries, LLC, 2002
March, 2002 − Rev. 0
53 Publication Order Number:
2N3819/D
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N−Channel − Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDS 25 Vdc
Drain−Gate Voltage VDG 25 Vdc
Gate−Source Voltage VGS 25 Vdc
Drain Current ID100 mAdc
Forward Gate Current IG(f) 10 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD350
2.8
mW
mW/°C
Storage Channel Temperature Range Tstg −65 to +150 °C
Device Package Shipping
ORDERING INFORMATION
2N3819 TO−92
TO−92
CASE 29
STYLE 22
5000 Units/Box
3
2
1
2N3819 = Device Code
Y = Year
WW = Work Week
MARKING DIAGRAM
2N
3819
YWW
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2N3819
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54
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0)
V(BR)GSS 25 − − Vdc
Gate−Source
(VDS = 15 Vdc, ID = 200 µAdc)
VGS 0.5 −7.5 Vdc
Gate−Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
VGS(off) − − −8.0 Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
IGSS − − 210 nAdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
IDSS 2.0 −20 mAdc
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yfs3.0 −6.5 mmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yos−40 −mhos
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yfs−5.6 −mmhos
Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yrs−1.0 −mmhos
Input Capacitance (VDS = 20 Vdc, −VGS = 1.0 Vdc) Ciss −3.0 −pF
Reverse Transfer Capacitance (VDS = 20 Vdc, −VGS = 1.0 Vdc, f = 1.0 MHz) Crss −0.7 −pF
Output Capacitance (VDS = 20 Vdc, −VGS = 1.0 Vdc, f = 1.0 MHz) Coss −0.9 −pF
Cut−off Frequency (Note 1) (VDS = 15 Vdc, VGS = 0) F(Yfs) −700 −MHz
1. The frequency at which gfs is 0.7 of its value at 1 kHz.
2N3819
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55
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Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos)
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COMMON SOURCE CHARACTERISTICS
S−PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
2N3819
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57
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Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg)
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog)
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COMMON GATE CHARACTERISTICS
S−PARAMETERS
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