!" N-Channel - Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain -Source Voltage VDS 25 Vdc Drain -Gate Voltage VDG 25 Vdc Gate -Source Voltage VGS 25 Vdc ID 100 mAdc IG(f) 10 mAdc 350 2.8 mW mW/C -65 to +150 C Drain Current Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C PD Storage Channel Temperature Range Tstg 1 2 3 TO-92 CASE 29 STYLE 22 MARKING DIAGRAM 2N 3819 YWW 2N3819 = Device Code Y = Year WW = Work Week ORDERING INFORMATION Device 2N3819 Semiconductor Components Industries, LLC, 2002 March, 2002 - Rev. 0 53 Package Shipping TO-92 5000 Units/Box Publication Order Number: 2N3819/D 2N3819 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate -Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) V(BR)GSS 25 - - Vdc Gate -Source (VDS = 15 Vdc, ID = 200 Adc) VGS 0.5 - 7.5 Vdc Gate -Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) - - - 8.0 Vdc IGSS - - 210 nAdc IDSS 2.0 - 20 mAdc OFF CHARACTERISTICS Gate Reverse Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS Zero -Gate -Voltage Drain Current (VDS = 15 Vdc, VGS = 0) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yfs 3.0 - 6.5 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yos - 40 - mhos Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yfs - 5.6 - mmhos Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yrs - 1.0 - mmhos (VDS = 20 Vdc, -VGS = 1.0 Vdc) Ciss - 3.0 - pF Input Capacitance Reverse Transfer Capacitance (VDS = 20 Vdc, -VGS = 1.0 Vdc, f = 1.0 MHz) Crss - 0.7 - pF Output Capacitance (VDS = 20 Vdc, -VGS = 1.0 Vdc, f = 1.0 MHz) Coss - 0.9 - pF (VDS = 15 Vdc, VGS = 0) F(Yfs) - 700 - MHz Cut-off Frequency (Note 1) 1. The frequency at which gfs is 0.7 of its value at 1 kHz. http://onsemi.com 54 2N3819 COMMON SOURCE CHARACTERISTICS )" !" " # " # " ! " ") "! " " ! ! ) #, $ - $ $&&'( , $ - $ % $&&'( #$% $ $% $ % $&&'( $&&'( ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) ! ) !" " " , " ") "! " ! " " " ") "! #, " ! ! ) ! ) )" !" # # " ! " " " ") "! " " Figure 2. Reverse Transfer Admittance (yrs) ++ ! ) !" ( ./0 " ! " " "! " #( " "! ++ " ! #($ % $ $&'( ($ % $ % $&'( #$ *$ $&&'( + +$ *$ % $&&'( Figure 1. Input Admittance (yis) #( " ! " ! ) " Figure 3. Forward Transadmittance (yfs) ! ) ! ) Figure 4. Output Admittance (yos) http://onsemi.com 55 2N3819 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) " 1 ! 5 " ! 1 "2 4 5 "4 2 1 ! ) 2 ) 4 3 ) 2 2 3 ! 1 "1 " 5 " ! 3 2 " ) 4 4 ! 4 2 ! 1 ") ) "3 ! 1 " ! 3 1 2 " ) ) 3 4 4 ! ! 1 1 1 1 3 3 ! 4 ) 2 3 ! 4 1 Figure 5. S11s ! "4 "! 4 3 ) 2 3 2 ) 4 ! "1 3 2 ) 4 ! " 1 1 " 5 " ! "1 "! 5 2 3 Figure 6. S12s 1 ! ) ! 1 5 " ! " 1 ! 4 1 ) "3 ! 2 4 5 ) 3 2 3 "2 1 ! 4 3 ) 2 2 ) 3 ) 4 4 ! ! 1 1 1 ") ! 4 ) 2 3 Figure 7. S21s 4 ) 2 3 Figure 8. S22s http://onsemi.com 56 2 "4 ! 3 "4 1 2N3819 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) " #,# $ - $ $&&'( ,# $ - $ % $&&'( $&&'( $&&'( )" !" ##$% $ #$% $ % ## #,# " ! " " ") "! # " " # " ! ! ) ! ) "! " ,# " " ") "! " ! " " " ") "! ## " ! )" !" ## " ## " ! " " ") "! # " ,# " ! " " ! ) ! ) ! ) Figure 10. Reverse Transfer Admittance (yrg) #(#$ % $ $&&'( (#$ % $ % $&&'( ## $ *$ $&&'( # $ *$ % $&&'( Figure 9. Input Admittance (yig) ! ) " ") "! (# " ! " " " ") "! #(# " " " #(# " ! Figure 11. Forward Transfer Admittance (yfg) ! ) ! ) Figure 12. Output Admittance (yog) http://onsemi.com 57 2N3819 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) ! 1 ") 1 "! 4 5 "1 ) 1 ) 1 ! ! 4 3 ) 2 2 ) 3 4 3 4 ! 1 1 4 ) 2 3 ! " 4 5 ) 3 2 " ) ! 4 ) 2 2 4 5 " ! ! " 1 " 3 " 1 "1 ! 4 1 ) 2 3 1 Figure 14. S12g 1 "! " "1 " "! 1 1 Figure 13. S11g ! "1 3 ! 2 3 3 1 4 2 " " ! ) 2 5 " ! "4 ! 5 ! 1 ! 4 2 "3 ) 3 ! 4 3 ) 2 2 ) 3 ) 4 4 ! ! 1 1 1 1 ! " 4 " ) 2 5 " ! " 3 3 3 ! 4 ) 2 3 5 " ! "2 Figure 15. S21g ") 3 2 "4 ! 4 ) 2 3 Figure 16. S22g http://onsemi.com 58