TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/441
T4-LDS-0021 Rev. 1 (072070) Page 1 of 2
DEVICES LEVELS
2N3740 2N3741 JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N3740 2N3741 Unit
Collector-Emitter Voltage VCEO 60 80 Vdc
Collector-Base Voltage VCBO 60 80 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Base Current IB 2.0 Adc
Collector Current IC 4.0 Adc
Total Power Dissipation @ TA = +25°C (1)
@ TC = +100°C PT 25
14 W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance, Junction-to-Case RθJC 7.0 °C/W
Note:
(1) Derate linearly @ 143 mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100mAdc 2N3740
2N3741
V(BR)CEO
60
80
Vdc
Collector-Emitter Cutoff Current
VCE = 40Vdc
VCE = 60Vdc
2N3740
2N3741
ICEO
10
10
µAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 1.5Vdc
VCE = 80Vdc, VBE = 1.5Vdc
2N3740
2N3741
ICEX
300
300
ηAdc
Collector-Base Cutoff Current
VCB = 60Vdc
VCB = 80Vdc
2N3740
2N3741
ICBO
100
100
ηAdc
Emitter-Base Cutoff Current
VEB = 7.0Vdc IEBO 100
ηAdc
TO-66 (TO-213AA)
* See Appendix A for Package
Outline
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/441
T4-LDS-0021 Rev. 1 (072070) Page 2 of 2
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 100mAdc, VCE = 1.0Vdc
IC = 250mAdc, VCE = 1.0Vdc
IC = 500mAdc, VCE = 1.0Vdc
IC = 1.0Adc, VCE = 1.0Vdc
IC = 4.0Adc, VCE = 5.0Vdc
hFE
40
30
20
10
3.0
120
Collector-Emitter Saturation Voltage
IC = 250mAdc, IB = 25mAdc
IC = 1.0Adc, IB = 125mAdc
VCE(sat)
0.4
0.6
Vdc
Base-Emitter Voltage
IC = 250mAdc, VCE = 1.0Vdc VBE(on) 1.0 Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 100mAdc, VCE = 10Vdc, f = 5.0MHz
|hfe| 1.0 12
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 50mAdc, VCE = 10Vdc, f = 1.0kHz hfe 25 250
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 100 pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
VCC = 30Vdc; IC = 1.0Adc; IB = 0.1Adc ton 400 µs
Turn-Off Time
VCC = 30Vdc; IC = 1.0Adc; IB = IB = 0.1Adc toff 1.0 µs
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 6.25Vdc, IC = 4.0Adc
Test 2
VCE = 20Vdc, IC = 1.25Adc
Test 3
VCE = 50Vdc, IC = 150mAdc
VCE = 65Vdc, IC = 150mAdc
2N3740
2N3741
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
