TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/441 DEVICES LEVELS 2N3740 2N3741 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol 2N3740 2N3741 Unit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage VEBO 7.0 Vdc Base Current IB 2.0 Adc Collector Current IC 4.0 Adc PT 25 14 W TJ, Tstg -65 to +200 C RJC 7.0 C/W Total Power Dissipation @ TA = +25C (1) @ TC = +100C Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case TO-66 (TO-213AA) * See Appendix A for Package Outline Note: (1) Derate linearly @ 143 mW/C for TC > +25C ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit 2N3740 2N3741 V(BR)CEO 60 80 2N3740 2N3741 ICEO 10 10 Adc VCE = 60Vdc, VBE = 1.5Vdc VCE = 80Vdc, VBE = 1.5Vdc 2N3740 2N3741 ICEX 300 300 Adc Collector-Base Cutoff Current VCB = 60Vdc VCB = 80Vdc 2N3740 2N3741 ICBO 100 100 Adc IEBO 100 Adc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100mAdc Vdc Collector-Emitter Cutoff Current VCE = 40Vdc VCE = 60Vdc Collector-Emitter Cutoff Current Emitter-Base Cutoff Current VEB = 7.0Vdc T4-LDS-0021 Rev. 1 (072070) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/441 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERISTICS Symbol Min. Max. Unit (2) Forward-Current Transfer Ratio IC = 100mAdc, VCE = 1.0Vdc IC = 250mAdc, VCE = 1.0Vdc IC = 500mAdc, VCE = 1.0Vdc IC = 1.0Adc, VCE = 1.0Vdc IC = 4.0Adc, VCE = 5.0Vdc hFE 40 30 20 10 3.0 120 Collector-Emitter Saturation Voltage IC = 250mAdc, IB = 25mAdc IC = 1.0Adc, IB = 125mAdc VCE(sat) 0.4 0.6 Vdc Base-Emitter Voltage IC = 250mAdc, VCE = 1.0Vdc VBE(on) 1.0 Vdc Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 100mAdc, VCE = 10Vdc, f = 5.0MHz |hfe| 1.0 12 Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 50mAdc, VCE = 10Vdc, f = 1.0kHz hfe 25 250 Output Capacitance VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz Cobo 100 pF Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Turn-On Time VCC = 30Vdc; IC = 1.0Adc; IB = 0.1Adc ton 400 s Turn-Off Time VCC = 30Vdc; IC = 1.0Adc; IB = IB = 0.1Adc toff 1.0 s SAFE OPERATING AREA DC Tests TC = +25C, 1 Cycle, t = 1.0s Test 1 VCE = 6.25Vdc, IC = 4.0Adc Test 2 VCE = 20Vdc, IC = 1.25Adc Test 3 VCE = 50Vdc, IC = 150mAdc VCE = 65Vdc, IC = 150mAdc 2N3740 2N3741 (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0021 Rev. 1 (072070) Page 2 of 2