IPD110N12N3 G IPS110N12N3 G "%&$!"#TM3Power-Transistor Features Product Summary R ( 492 ??6= ?@ C>2 ==6G6= V ;I )*( K R ;I"\[#$>2 I )) Z" I; /- 7 R I46==6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R U @ A6C2 E:?8 E6>A6C2 E FC6 R * 3 7C66 =62 5 A=2 E:?8 , @ # - 4@ >A=:2 ?E 92 =@ 86? 7C66 R + F2 =:7:65 2 44@ C5:?8 E@ % )# 7@ CE2 C86E2 AA=:42 E:@ ? R$562 =7@ C9:89 7C6BF6?4J DH:E49:?8 2 ?5 DJ?49C@ ?@ FD C64E :7:42 E :@ ? Type $* - ( ( " $* ( ( " Package F>%JE*-)%+ F>%JE*-*%+ Marking ))(D)*D ))(D)*D Maximum ratings, 2 ET W U F?=6DD @ E96CH:D6 DA64:7:65 Parameter Symbol Conditions @ ?E :?F@ FD 5C 2 :? 4FCC6?E I; Value T 9 U /- T 9 -, U Unit 7 * F=D65 5C2 :? 4FCC6?E*# I ;$]bYR T 9 U +(( G2 =2 ?496 6?6C8J D:?8=6 AF=D6 E 7I I ; R >I " )*( ZA " 2 E6 D@ FC46 G@ =E2 86+# V >I r*( K * @ H6C5:DD:A2 E:@ ? P a\a )+. L ) A6C2 E:?8 2 ?5 DE@ C 2 86 E6>A6C2 EFC6 T W T aT T 9 U $ 4=:>2 E :4 42 E68@ CJ $( $ )# % - . U 2 ?5 % - *# D66 7:8FC 6 JWZNe U 2 ?5 5FEJ 4J4=6 , 6G 7@ C/ T4%-K A2 86 IPD110N12N3 G IPS110N12N3 G Parameter Values Symbol Conditions Unit min. typ. max. % % )&) Thermal characteristics .96C>2 =C6D:DE2 ?46 ; F?4E:@ ? 42 D6 R aUA9 .96C>2 =C6D:DE2 ?46 ; F?4E:@ ? 2 >3 :6?E R aUA7 >:?:>2 =7@ @ EAC:?E B'L ,# 4> 4@ @ =:?8 2 C62 % % -( )*( % % * + , % (&) ) % )( )(( % ) )(( [7 % 1&* )) Z" % )&- % " ,* 0+ % I Electrical characteristics, 2 ET W U F?=6DD @ E96CH:D6 DA64:7:65 Static characteristics C2 :? D@ FC46 3 C62 <5@ H? G@ =E2 86 V "8H#;II V >I / I ; > " 2 E6 E9C6D9@ =5 G@ =E2 86 V >I"aU# V ;I5V >I I ; W 16C@ 82 E6 G@ =E2 86 5C 2 :? 4FCC6?E I ;II V ;I / V >I T W U / V ;I / V >I T W U / " 2 E6 D@ FC46 =62 <2 86 4FCC6?E I >II V >I / V ;I C2 :? D@ FC46 @ ? DE2 E6 C6D:DE2 ?46 R ;I"\[# V >I / I ; " 2 E6 C6D:DE 2 ?46 R> J_N[P\[QbPaN[PR g S / hV ;Ih6*hI ;hR ;I"\[#ZNe I ; ,# 6G:46 @ ? >> I >> I >> 6A@ IJ * !, H:E9 4>* @ ?6 =2 J6C 4@ ??64E :@ ? * :D G6C E:42 =:? DE :==2 :C , 6G A2 86 K s7 W>E 9:4< 4@ AA6C2 C 62 7@ C5C 2 :? IPD110N12N3 G IPS110N12N3 G Parameter Values Symbol Conditions Unit min. typ. max. % +*,( ,+)( % ,(0 -,+ Dynamic characteristics $?AFE42 A2 4:E2 ?46 C V V >I / V ;I f ' # K / ) FEAFE42 A2 4:E2 ?46 C \ , 6G6CD6 EC2 ?D76C42 A2 4:E2 ?46 C _ % ** % .FC? @ ? 56=2 J E:>6 t Q"\[# % ). % , :D6 E:>6 t_ % ). % .FC? @ 7756=2 J E:>6 t Q"\SS# % *, % !2 ==E:>6 tS % 0 % " 2 E6 E@ D@ FC46 492 C86 Q T % )0 % " 2 E6 E@ 5C2 :? 492 C86 Q TQ % )* % % *( % V ;; / V >I / I ; R > " ]= [ " 2 E6 92 CT6 92 C2 4E6C:DE :4D-# V ;; / I ; V >I E@ / [9 - H:E49:?8 492 C86 Q d " 2 E6 492 C86 E@ E 2= QT % ,1 .- " 2 E6 A=2 E62 F G@ =E 2 86 V ]YNaRNb % -&. % ) FEAFE492 C86 Q \ % -. /- [9 % % /- 7 % % +(( % ) )&* % 1( [ % *,1 [9 V ;; / V >I / K Reverse Diode :@ 56 4@ ?E:?@ FD 7@ CH2 C5 4FCC 6?E II :@ 56 AF=D6 4FCC 6?E I I$]bYR :@ 56 7@ CH2 C5 G@ =E2 86 V I; , 6G6CD6 C64@ G6CJ E:>6 t __ , 6G6CD6 C64@ G6CJ 492 C 86 Q __ -# , 6G T 9 U V >I / I = T W U V H / I =5I I Qi ='Qt WD K - 66 7:8FC 6 7@ C82 E6 492 C 86 A2 C2 >6E6C567:?:E :@ ? A2 86 IPD110N12N3 G IPS110N12N3 G 1 Power dissipation 2 Drain current P a\a5S"T 9# I ;5S"T 9 V >I" 140 / 80 70 120 60 100 I D [A] P tot [W] 50 80 40 60 30 40 20 20 10 0 0 0 50 100 150 200 0 50 T C [C] 100 150 200 T C [C] 3 Safe operating area 4 Max. transient thermal impedance I ;5S"V ;I T 9 U D 5( Z aUA95S"t ]# A2 C2 >6E6C t ] A2 C2 >6E6C D 5t ]'T 103 101 WD WD 102 WD 100 Z thJC [K/W] I D [A] >D ;9 10 1 >D (&- (&* (&) 10-1 10 (&((&(* 0 (&() D:?8=6 AF=D6 10-1 10 10-2 -1 10 0 10 1 10 2 10 3 V DS [V] , 6G 10-5 10-4 10-3 10-2 10-1 100 t p [s] A2 86 IPD110N12N3 G IPS110N12N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I ;5S"V ;I T W U R ;I"\[#5S"I ; T W U A2 C 2 >6E6C V >I A2 C2 >6E6C V >I 250 30 / / / / / 25 200 150 R DS(on) [m ] 20 I D [A] / 100 / / 15 / 10 / / 50 5 / / 0 0 0 1 2 3 4 5 0 20 V DS [V] 40 60 80 60 80 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I ;5S"V >I L V ;Ih6*hI ;hR ;I"\[#ZNe g S5S"I ; T W U A2 C 2 >6E6C T W 200 100 80 150 g fs [S] I D [A] 60 100 40 U 50 U 20 0 0 0 2 4 6 8 , 6G 0 20 40 I D [A] V GS [V] A2 86 IPD110N12N3 G IPS110N12N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R ;I"\[#5S"T W I ; V >I V >I"aU#5S"T W V >I5V ;I / A2 C2 >6E6C I; 25 4 3.5 20 3 W V GS(th) [V] R DS(on) [m ] W 2.5 15 af] 10 2 1.5 1 5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 11 Typ. capacitances C 5S"V ;I V >I / f 60 100 140 180 T j [C] T j [C] 12 Forward characteristics of reverse diode ' # K I =5S"V I;# A2 C2 >6E6C TW 104 103 9V U U 103 U 102 I F [A] C [pF] 9\ 102 U 101 9_ 101 100 0 20 40 60 80 100 V DS [V] , 6G 0 0.5 1 1.5 2 V SD [V] A2 86 IPD110N12N3 G IPS110N12N3 G 13 Avalanche characteristics 14 Typ. gate charge I 7I5S"t 7K R >I " V >I5S"Q TNaR I ; AF=D65 A2 C 2 >6E6C T W"aN_a# A2 C2 >6E6C V ;; 103 10 / 8 102 / / V GS [V] I AS [A] 6 U 4 U 10 1 U 2 100 0 100 101 102 103 0 10 t AV [s] 30 40 50 Q gate [nC] 15 Drain-source breakdown voltage V 8H";II#5S"T W I ; 20 16 Gate charge waveforms > 135 V >I Qg 130 V BR(DSS) [V] 125 120 V T "aU# 115 110 Q T "aU# Q d Q T 105 -60 -20 20 60 100 140 Q g ate Q TQ 180 T j [C] , 6G A2 86 IPD110N12N3 G IPS110N12N3 G PG-TO-251SL : Outline , 6G A2 86 IPD110N12N3 G IPS110N12N3 G PG-TO252-3: Outline , 6G A2 86 IPD110N12N3 G IPS110N12N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please 4@ ?E2 4EE 96 ?62 C6DE$?7:?6@ ? .649?@ =@ 8:6D ) 77:46 HHH :?7:?6@ ? 4@ > Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. , 6G A2 86