Philips Semiconductors Product specification Schottky barrier diode BAS86 FEATURES DESCRIPTION SOD80C glass SMD package with e Low forward voltage e High breakdown voltage Guard ring protected Hermetically-sealed small SMD package. APPLICATIONS e Ultra high- Voltage clamping e Protection circuits e Blocking diodes. Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed tin-plated metal discs at each end. It is suitable for automatic placement and as such it can withstand immersion soldering. speed switching ~f+ Cathode indicated by a grey band. Fig.1 Simplified outline (SOD80C), pin configuration and symbol. MAM190 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage - 50 Vv le continuous forward current - 200 mA lFyav) average forward current see Fig.2 - 200 mA leam repetitive peak forward current tps 1sec.,5<0.5 ~ 500 mA lesm non-repetitive peak forward current tp = 10 ms 5 A Tstg storage temperature -65 +150 a T; junction temperature ~ 125 C Tamb operating ambient temperature -65 +125 C 1996 Oct 01 2-35Philins Semiconductors Product specification Schottky barrier diode BAS86 ELECTRICAL CHARACTERISTICS Tamb = 25 C untess otherwise specified. SYMBOL PARAMETER. CONDITIONS MAX. UNIT Ve forward voltage see Fig.3 Ie =0.1 mA 300 mv lp=1mA 380 mV lp = 10mA 450 mV Ip =30 mA 600 mV IF = 100 mA 900 mV In reverse current Vr = 40 V; see Fig.4; note 1 5 pA ter reverse recovery time when switched from Ir = 10 mA to I_ = 10 mA; 4 ns R,, = 100 Q; measured at Ip = 1 mA; see Fig.6 Ca diode capacitance f= 1 MHz; Vp = 1 V; see Fig.5 8 pF Note 1. Pulsed test: tp = 300 ps; 5 = 0.02. THERMAL CHARACTERISTICS SYMBOL | _ PARAMETER CONDITIONS VALUE | UNIT Pin ja thermal resistance from junction to ambient | note 1 320 K/AW Note 1. Refer to SOD80 standard mounting conditions. 1996 Oct 01 2-%Philips Semiconductors Product specification Schottky barrier diode BAS86 GRAPHICAL DATA 250 MrAS#O 403 'F(AV) ip (ma) (mA) 200 107 150 N \ 10 100 \ 50 N ' 0 1077 50 00 150 0 1 Tam Cc) 0 0.4 0.8 Ve W) 1.2 Fig.2 Derating curve. (1) Tamp = 125 C. (2) Tamp = 85C. (3) Tamp = 25C. Fig.3 Forward current as a function of forward voltage; typical values. (1) Tamb = 85 C. (2) Temp = 25C. (3) Tams = 40C. Fig.4 Reverse currentas a function of reverse voltage; typical values. f=1 MHz. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 1996 Oct 01Philips Semiconductors Product. specification Schottky barrier diode BAS86 e dip Fig.6 Reverse recovery definitions. 1996 Oct 01