TIP29, 30
High Power Bipolar Transistor
Page 1 31/05/05 V1.0
Features:
•Collector-Emitter sustaining voltage-
VCEO(sus) = 60V (Minimum) - TIP29A, TIP30A
= 100V (Minimum) - TIP29C, TIP30C.
•Collector-Emitter saturation voltage-
VCE(sat) = 0.7V (Maximum) at IC= 1.0A.
•Current gain-bandwidth product fT= 3.0MHz (Minimum) at IC= 200mA.
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case).
NPN PNP
TIP29A TIP30A
TIP29C TIP30C
1.0 Ampere
Complementary Silicon
Power Transistors
40 - 100 Volts
30 Watts
TO-220
TIP29, 30
High Power Bipolar Transistor
Page 2 31/05/05 V1.0
THERMAL CHARACTERISTICS
Maximum Ratings
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 4.167 °C/W
Characteristic Symbol TIP29A
TIP30A
TIP29C
TIP30C Unit
Collector-Emitter Voltage VCEO
60 100
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5.0
Collector Current-Continuous
-Peak IC1.0
3.0 A
Base Current IB0.4
Total Power Dissipation at TC= 25°C
Derate above 25°C PD30
0.24
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
Figure - 1 Power Derating
TIP29, 30
High Power Bipolar Transistor
Page 3 31/05/05 V1.0
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC= 30mA, IB= 0) TIP29A, TIP30A
TIP29C, TIP30C
VCEO(sus) 60
100
-V
Collector Cut off Current
(VCE = 30V, IB= 0) TIP29A, TIP30A
(VCE = 60V, IB= 0) TIP29C, TIP30C ICEO -0.3
mA
Collector Cut off Current
(VCE = 60V, VEB = 0) TIP29A, TIP30A
(VCE = 100V, VEB = 0) TIP29C, TIP30C ICES -0.2
Emitter Cut off Current
(VEB = 5.0V, IC= 0) IEBO -1.0
Electrical Characteristics (TC= 25°C unless otherwise noted)
DC Current Gain
(IC= 0.2A, VCE = 4.0V)
(IC= 1.0A, VCE = 4.0V)
hFE 40
15
-
75 -
Collector-Emitter Saturation Voltage
(IC= 1.0A, IB= 125mA) VCE(sat) -0.7
V
Base-Emitter On Voltage
(IC= 1.0A, VCE = 4.0V) VBE(on) -1.3
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product (2)
(IC= 200mA, VCE = 10V, f = 1MHz) fT3.0 -MHz
Small Signal Current Gain
(IC= 200mA, VCE = 10V, f = 1kHz) hfe 20 - -
ON CHARACTERISTICS (1)
(1) Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2.0%.
(2) fT= hFE •fTEST.
TIP29, 30
High Power Bipolar Transistor
Page 4 31/05/05 V1.0
There are two limitations on the power handling ability of a transistor:
average junction temperature and second breakdown safe operating area
curves indicate IC-VCE limits of the transistor that must be observed for
reliable operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure - 6 curve is based on TJ(PK) = 150°C; TCis variable
depending on power level. Second breakdown pulse limits are valid for duty
cycles to 10% provided TJ(PK) ≤150°C. At high case temperatures, thermal
limitation will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure - 2 Turn-On Time Figure - 3 Switching Time Equivalent Circuit
Figure - 4 DC Current Gain Figure - 5 Turn-Off Time
Figure - 6 Active Region Safe Operating Area
TIP29, 30
High Power Bipolar Transistor
Page 5 31/05/05 V1.0
TYPE Part Number
NPN
TIP29A
TIP29C
PNP
TIP30A
TIP30C
Specifications
For enquiries from all other markets
TIP29, 30
High Power Bipolar Transistor
Page 6 31/05/05 V1.0
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