DS23017 Rev. 8 - 2 1 of 3 MBR3030PT - MBR3060PT
www.diodes.com ãDiodes Incorporated
MBR3030PT - MBR3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
PQ
K
S
M
H
R
D
C
Maximum Ratings and Electrical Characteristics @ TA= 25°C unless otherwise specified
·Guard Ring Die Construction for
Transient Protection
·Low Power Loss, High Efficiency
·High Surge Capability
·High Current Capability and Low Forward Voltage Drop
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
·Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
·Case: TO-3P
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Finish ¾Bright Tin. Plated Leads Solderable
per MIL-STD-202, Method 208
·Polarity: As Marked on Body
·Ordering Information: See Last Page
·Marking: Type Number
·Weight: 5.6 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol MBR
3030PT
MBR
3035PT
MBR
3040PT
MBR
3045PT
MBR
3050PT
MBR
3060PT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 35 40 45 50 60 V
RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V
Average Rectified Output Current @ TC= 125°C
Total Device (See Fig. 1) IO30 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM 200 A
Forward Voltage Drop @ IF= 20A, TC= 25°C
per element (Note 3) @ IF= 20A, TC= 125°C
@ IF= 30A, TC= 25°C
@ IF= 30A, TC= 125°C
VFM
¾
0.60
0.76
0.72
0.75
0.65
0.80
0.75
V
Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage, per element @ TC= 125°CIRM 1.0
60
5.0
100 mA
Typical Total Capacitance (Note 2) CT500 pF
Typical Thermal Resistance Junction to Case (Note 1) RqJc 1.4 °C/W
Voltage Rate of Change (Rated VR)dV/dt 10,000 V/µs
Operating Temperature Range Tj-65 to +150 °C
Storage Temperature Range TSTG -65 to +175 °C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width £300 ms, duty cycle £2%.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
TO-3P
Dim Min Max
A1.88 2.08
B4.68 5.36
C20.63 22.38
D18.5 21.5
E2.1 2.4
G0.51 0.76
H15.38 16.25
J1.90 2.70
K2.9Æ3.65Æ
L3.78 4.50
M5.2 5.7
N0.89 1.53
P1.82 2.46
Q2.92 3.23
R11.70 12.84
S¾6.10
All Dimensions in mm
DS23017 Rev. 8 - 2 2 of 3 MBR3030PT - MBR3060PT
www.diodes.com
0.1
1.0
10
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS F0RWARD VOLTAGE (V)
Fi
g
.2 T
y
pical Forward Characteristics, per element
F
100
00.20.4
MBR 3030PT - MBR 3045PT
MBR 3050PT - MBR 3060PT
0.6 0.8
T=25°C
j
2% duty cycle
0
50
100
150
200
250
300
110 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60Hz
Fi
g
. 3 Max Non-Repetitive Sur
g
e Current
T = 25°C
j
8.3ms Single half-wave
JEDEC Method
100
1000
4
000
0.1 1.0 10 100
C , CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
Fi
g
.4 T
y
pical Total Capacitance
R
T=25°C
f=1MHz
j
0.01
0.1
1.0
10
020 40 60 80 100 120 140
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
g
.5 T
y
pical Reverse Characteristics, per element
T = 125°C
j
T = 75°C
j
T = 25°C
j
100
0 50 100 150
I , AVERAGE FORWARD CURRENT (A)
O
T , CASE TEMPERATURE (°C)
Fi
g
. 1 Forward Current Deratin
g
Curve, total device
C
0
6
12
18
24
30
Notes: 5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf.
DS23017 Rev. 8 - 2 3 of 3 MBR3030PT - MBR3060PT
www.diodes.com
Ordering Information
Device Packaging Shipping
MBR3030PT TO-3P 30/Tube
MBR3035PT TO-3P 30/Tube
MBR3040PT TO-3P 30/Tube
MBR3045PT TO-3P 30/Tube
MBR3050PT TO-3P 30/Tube
MBR3060PT TO-3P 30/Tube
(Note 5)
