COMSET SEMICONDUCT ORS 1/3
2N4901 – 2N4902 – 2N4903
PNP SILICON TRANSISTORS, EPITAXIAL BASE
LF Large signal power amplification
Switching medium current
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
2N4901 -40
2N4902 -60
VCBO Collector to Base Voltage 2N4903 -80 V
2N4901 -40
2N4902 -60
VCEO #Collector-Emitter Voltage 2N4903 -80 V
2N4901 -40
2N4902 -60
VCER Collector-Emitter Voltage 2N4903 -80 V
VEBO Emitter-Base Voltage 2N4901
2N4902
2N4903 -5.0 V
2N4901 -40
2N4902 -60
VCEX Collector-Base Voltage VBE=1.5 V 2N4903 -80 V
ICCollector Current – Continuous 2N4901
2N4902
2N4903 -5 A
ICM Collector Current – Peak tp=5 ms 2N4901
2N4902
2N4903 -10 A
IBBase Current – Continuous 2N4901
2N4902
2N4903 -1 A
PTOT Power Dissipation 2N4901
2N4902
2N4903 87.5 W
TJJunction Temperature 2N4901
2N4902
2N4903 200 °C
TSTG Storage Temperature 2N4901
2N4902
2N4903
-65 to
+200 °C
COMSET SEMICONDUCT ORS 2/3
2N4901 – 2N4902 – 2N4903
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
RthJC Thermal Resistance, Junction to Case 2°C/W
RthJA Junction to Free Air Thermal Resistance 47.3 °C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
2N4901 -40
2N4902 -60
VCEO(BR) Collector-Emitter
Break do wn Voltag e) IC=200 mAdc, IB=0 2N4903 -80 --V
VCE=-40 V, IE=0 2N4901 - - 1.0
VCE=-60 V, IE=0 2N4902 - - 1.0
ICBO Collector-Base cut-off
Current VCE=- 80 V, IE=0 2N4903 - - 1.0 mA
VCE=-40 V, IB=0 2N4901 - - 1.0
VCE=-60 V, IB=0 2N4902 - - 1.0
ICEO Collector-Emitter cut-off
Current VCE=- 80 V, IB=0 2N4903 - - 1.0 mA
VCE=-40 V, VEB=1.5 V - - -0.1
VCE=-40 V, VEB=1.5 V,
TCASE=150°C 2N4901 ---2.0
VCE=-60 V, VEB=1.5 V - - -0.1
VCE=-60 V, VEB=1.5 V,
TCASE=150°C 2N4902 ---2.0
VCE=-80 V, VEB=1.5 V - - -0.1
ICEX Collector Cutoff Current
VCE=-60 V, VEB=1.5 V,
TCASE=150°C 2N4903 ---2.0
mA
VCE=-2.0 V, IC=-1.0 A 2N4901
2N4902
2N4903 20 - 80
h21E DC Current Gain (*)
VCE=-2.0 V, IC=-5.0 A 2N4901
2N4902
2N4903 7--
V
h21e Forward Current Transfer
Ratio (*) VCE=-10 V, IC=-0.5 A,
f=1.0 kHz
2N4901
2N4902
2N4903 20 - - V
IC=-1.0 A, IB=-0.1 A 2N4901
2N4902
2N4903 ---0.4
VCE(SAT) Collector-Emitter saturation
Voltage (*) IC=-5.0 A, IB=-1.0 A 2N4901
2N4902
2N4903 ---1.5
V
COMSET SEMICONDUCT ORS 3/3
2N4901 – 2N4902 – 2N4903
Symbol Ratings Test Condition(s) Min Typ Mx Unit mA
VBE(SAT) Base-Emitter Saturation
Voltage (*) IC=-5.0 A, IB=-1.0 A 2N4901
2N4902
2N4903 -1.7- V
VBE Base-Emitter Voltage (*) IC=-1.0 A, VCE=-2.0 V 2N4901
2N4902
2N4903 ---1.2V
fTTransition Frequency VCE=-10 V, IC=-1.0 A,
f=1.0 kHz
2N4901
2N4902
2N4903 4--MHz
Is/b Second Breakdown
Collector Current t=1 s, VCE=40 V,
TCASE=100°C
2N4901
2N4902
2N4903 1.25 - - A
In accordance with JEDEC Registration Data
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm inches
A 25,45 1
B 38,8 1,52
C 30,09 1,184
D 17,11 0,67
E 9,78 0,38
G 11,09 0,43
H 8,33 0,32
L 1,62 0,06
M 19,43 0,76
N 1 0,04
P 4,08 0,16
Pin 1 : Base
Pin 2 : Emitter
Case : Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without not ice.
