2N4901 - 2N4902 - 2N4903 PNP SILICON TRANSISTORS, EPITAXIAL BASE LF Large signal power amplification Switching medium current ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector to Base Voltage VCEO #Collector-Emitter Voltage VCER Collector-Emitter Voltage VEBO Emitter-Base Voltage VCEX Collector-Base Voltage IC Collector Current - Continuous ICM Collector Current - Peak IB Base Current - Continuous PTOT Power Dissipation TJ Junction Temperature VBE=1.5 V tp=5 ms Value 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 -40 -60 -80 -40 -60 -80 -40 -60 -80 Unit V V V -5.0 V -40 -60 -80 V 2N4901 2N4902 2N4903 -5 A 2N4901 2N4902 2N4903 -10 A 2N4901 2N4902 2N4903 -1 A 87.5 W 200 C -65 to +200 C 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 TSTG Storage Temperature 2N4901 2N4902 2N4903 COMSET SEMICONDUCTORS 1/3 2N4901 - 2N4902 - 2N4903 THERMAL CHARACTERISTICS Symbol Ratings RthJC Thermal Resistance, Junction to Case RthJA Junction to Free Air Thermal Resistance Value Unit 2 C/W 47.3 C/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol Ratings Test Condition(s) VCEO(BR) Collector-Emitter Breakdown Voltage) ICBO Collector-Base cut-off Current ICEO Collector-Emitter cut-off Current Collector Cutoff Current VCE(SAT) Collector-Emitter saturation Voltage (*) V - VCE=-40 V, IE=0 - 1.0 VCE=-60 V, IE=0 2N4902 - - 1.0 VCE=-80 V, IE=0 2N4903 - - 1.0 VCE=-40 V, IB=0 2N4901 - - 1.0 VCE=-60 V, IB=0 2N4902 - - 1.0 VCE=-80 V, IB=0 2N4903 - - 1.0 - - -0.1 - - -2.0 - - -0.1 - - -2.0 - - -0.1 - - -2.0 20 - 80 VCE=-40 V, VEB=1.5 V, TCASE=150C VCE=-60 V, VEB=1.5 V VCE=-60 V, VEB=1.5 V, TCASE=150C VCE=-80 V, VEB=1.5 V VCE=-60 V, VEB=1.5 V, TCASE=150C VCE=-2.0 V, IC=-5.0 A Forward Current Transfer Ratio (*) Unit - DC Current Gain (*) h21e Mx -40 -60 -80 - VCE=-2.0 V, IC=-1.0 A h21E Typ 2N4901 2N4902 2N4903 2N4901 IC=200 mAdc, IB=0 VCE=-40 V, VEB=1.5 V ICEX Min VCE=-10 V, IC=-0.5 A, f=1.0 kHz IC=-1.0 A, IB=-0.1 A IC=-5.0 A, IB=-1.0 A COMSET SEMICONDUCTORS mA mA 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 mA V 7 - - 20 - - - - -0.4 V V - - -1.5 2/3 2N4901 - 2N4902 - 2N4903 Symbol Ratings Test Condition(s) VBE(SAT) Base-Emitter Saturation Voltage (*) IC=-5.0 A, IB=-1.0 A VBE Base-Emitter Voltage (*) IC=-1.0 A, VCE=-2.0 V fT Transition Frequency VCE=-10 V, IC=-1.0 A, f=1.0 kHz Is/b Second Breakdown Collector Current t=1 s, VCE=40 V, TCASE=100C Min 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 Typ Mx Unit mA - 1.7 - V - - -1.2 V 4 - - MHz 1.25 - - A In accordance with JEDEC Registration Data (*) Pulse Width 300 s, Duty Cycle 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm inches 25,45 1 38,8 1,52 30,09 1,184 17,11 0,67 9,78 0,38 11,09 0,43 8,33 0,32 1,62 0,06 19,43 0,76 1 0,04 4,08 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3