DISCRETE SEMICONDUCTORS DAWA SlAlleler WM EIR BCP51; BCP52; BCP53 PNP medium power transistors Product specification 1999 Apr 08 Supersedes data of 1997 Apr 08 Philips Se nductor &) PHILIPS VTPhilips Semiconductors Product specification meee ee ee ee PNP medium power transistors BCP51; BCP52; BCP53 meee ee ee ee FEATURES PINNING e High current (max. 1 A) PIN DESCRIPTION e Low voltage (max. 80 V) { base e Medium power (max. 1.3 W). 2,4 collector 3 emitter APPLICATIONS e Audio, telephony and automotive applications e Thick and thin-film circuits. 4 2,4 DESCRIPTION 1 PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. | | | 3 1 2 3 Top view MAM288 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vcopo collector-base voltage open emitter BCP51 - 45 Vv BCP52 - 60 Vv BCP53 - 100 Vv VcEo collector-emitter voltage open base BCP51 - 45 Vv BCP52 - 60 Vv BCP53 - 80 Vv VeBo emitter-base voltage open collector - 5 Vv Io collector current (DC) - -1 A lom peak collector current - -1.5 A IBm peak base current - -0.2 A Prot total power dissipation Tamb < 25 C; note 1 - 1.3 Ww Tstg storage temperature 65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature 65 +150 C Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm?2. For other mounting conditions, see Thermal considerations for SOT223 in the General Part of associated Handbook. 1999 Apr 08 2Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rih ja thermal resistance from junction to ambient note 1 95 K/W Rih j-s thermal resistance from junction to soldering point 14 KW Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm?2. For other mounting conditions, see Thermal considerations for SOT223 in the General Part of associated Handbook. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT IcBo collector cut-off current le = 0; Vcg =-30 V - - -100 {nA le = 0; Vog =-30 V; T) = 125C -10 |pA lEBo emitter cut-off current Ic = 0; Veg =-5 V - - 100 | nA hee DC current gain Voce = 2 V; see Fig.2 Ic =-5 mA 40 - - Ic =-150 mA 63 - 250 Ic = -500 mA 25 - - hee DC current gain Ico = 150 mA; Vce = -2 V; see Fig.2 BCP53-10 63 - 160 BCP51-16; BCP52-16; BCP53-16 100 |- 250 VecEsat collector-emitter saturation voltage | Ic =500 mA; Ip =-50 mA - - 0.5 |V Vee base-emitter voltage Ic =-500 mA; Vce = -2 V - - -1 Vv fr transition frequency Ic =-10 mA; Vce =5 V; - 115 |- MHz f = 100 MHz 1999 Apr 08 3Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 +60 MBH730 HEE i Voce =-2V 120 A N 80 \ 40 0 -10-1 +1 -10 -102 -108 Io (mA) -104 Fig.2 DC current gain; typical values. 1999 Apr 08 4Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 \ \ 7 Me - OA \ opel | Loar) < [e] 0 2 4mm Looiitiriitisiitiiiit scale DIMENSIONS (mm are the original dimensions) UNIT A Ay bp b, c D E e e, He Lp Q v w y 18 | 010] 080! 341 lose] 67 | 37 73 | 14 | 0.95 | 45 {001} 060] 29 |o22!] 63 | 33] *8| 23 | 671 o7 | oas| &F | &1 | O REFERENCES OUTLINE EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE 26-4444 $OT223 Ee} 97-02-28 1999 Apr 08 5Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, itis advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 08 6Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 NOTES 1999 Apr 08 7Philips Semiconductors Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp8 Philips Semiconductors Date of release: 1999 Apr 08 Document order number: 9397 750 05533 pet PHILIPS Lede