G
D
S
NTE312
N−Channel Silicon Junction
Field Effect Transistor
TO92 Type Package
Description:
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The
NTE312 comes in a TO−92 package.
Features:
DHigh Power Gain: 10dB Min at 400MHz
DHigh Transconductance: 4000 mmho Min at 400MHz
DLow Crss: 1pF Max
DHigh (Yfs) / Ciss Ratio (High−Frequency Figure−of−Merit)
DDrain and Gate Leads Separated for High Maximum Stable Gain
DCross−Modulation Minimized by Square−Law Transfer Characteristic
DFor Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment
Absolute Maximum Ratings: (TA = +25WC unless otherwise specified)
Drain−Gate Voltage, VDG 30V............................................................
Gate−Source Voltage, VGS −30V.........................................................
Gate Current, IG50mA..................................................................
Total Device Dissipation (TA = +25WC ), PD360mW.........................................
Derate Above +25WC 2.88mW/WC...................................................
Total Device Dissipation (TC = +25WC), PD500mW.........................................
Derate Above +25WC 4.0mW/WC....................................................
Storage Temperature Range, Tstg −65W to +150WC..........................................
Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), TL+260WC...............
Rev. 10−13
Electrical Characteristics: (TA = +25WC unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate−Source Breakdown Voltage V(BR)GSS IG = −1.0mA, VDS = 0 −30 − − V
Gate Reverse Current IGSS VGS = −20V, VDS = 0 − − −1.0 nA
Gate 1 Leakage Current IG1SS VG1S = −20V, VDS = 0, TA = +100WC− − −0.5 mA
Gate−Source Cutoff Voltage VGS(off) VDS = 15V, ID = 10mA −1.0 − −6.0 V
ON Characteristics
Zero−Gate Voltage Drain Current IDSS VDS = 15V, VGS = 0, Note 1 5.0 −15 mA
Small−Signal Characteristics
Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 4500 −7500 mmhos
Input Admittance Re(yis) 100MHz VDS = 15V, VGS = 0 − − 100 mmhos
400MHz − − 1000 mmhos
Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz − − 50 mmhos
Output Conductance Re(yos) 100MHz VDS = 15V, VGS = 0 − − 75 mmhos
400MHz − − 100 mmhos
Forward Transconductance Re(yfs) VDS = 15V, VGS = 0, f = 400MHz 4000 − − mmhos
Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1.0MHz − − 4.5 pF
Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1.0MHz − − 1.0 pF
Input Susceptance IM(Yis) 100MHz VDS = 15V, VGS = 0 − − 3.0 mmho
400MHz − − 12.0 mmho
Functional Characteristics
Noise Figure NF 100MHz VDS = 15V, ID = 5mA,
RiG = 1kW
− − 2.0 dB
400MHz − − 4.0 dB
Common Source Power Gain Gps 100MHz VDS = 15V, ID = 5mA,
RiG = 1kW
18 − − dB
400MHz 10 − − dB
Output Susceptance IM(Yos) 100MHz VDS = 15V, VGS = 0 − − 1000 mmhos
400MHz − − 4000 mmhos
Note 1. tp = 100ms, Duty Cycle = 10%.
.021 (.445) Dia Max
G S D
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
NOTE: Drain and Source are interchangeable.
