NTE312 N-Channel Silicon Junction Field Effect Transistor TO92 Type Package Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO-92 package. Features: D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 mmho Min at 400MHz D Low Crss: 1pF Max D G D High (Yfs) / Ciss Ratio (High-Frequency Figure-of-Merit) S D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross-Modulation Minimized by Square-Law Transfer Characteristic D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment Absolute Maximum Ratings: (TA = +25WC unless otherwise specified) Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25WC ), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above +25WC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.88mW/WC Total Device Dissipation (TC = +25WC), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate Above +25WC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/WC Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65Wto +150WC Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), TL . . . . . . . . . . . . . . . +260WC Rev. 10-13 Electrical Characteristics: (TA = +25WC unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Gate-Source Breakdown Voltage V(BR)GSS IG = -1.0mA, VDS = 0 -30 - - V Gate Reverse Current IGSS VGS = -20V, VDS = 0 - - -1.0 nA Gate 1 Leakage Current IG1SS VG1S = -20V, VDS = 0, TA = +100WC - - -0.5 mA VDS = 15V, ID = 10mA -1.0 - -6.0 V IDSS VDS = 15V, VGS = 0, Note 1 5.0 - 15 mA |yfs| VDS = 15V, VGS = 0, f = 1kHz 4500 - 7500 mmhos Re(yis) 100MHz VDS = 15V, VGS = 0 - - 100 mmhos 400MHz - - 1000 mmhos |yos| VDS = 15V, VGS = 0, f = 1kHz - - 50 mmhos Re(yos) 100MHz VDS = 15V, VGS = 0 - - 75 mmhos 400MHz - - 100 mmhos Gate-Source Cutoff Voltage VGS(off) ON Characteristics Zero-Gate Voltage Drain Current Small-Signal Characteristics Forward Transfer Admittance Input Admittance Output Admittance Output Conductance Forward Transconductance Re(yfs) VDS = 15V, VGS = 0, f = 400MHz 4000 - - mmhos Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1.0MHz - - 4.5 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1.0MHz - - 1.0 pF 100MHz VDS = 15V, VGS = 0 - - 3.0 mmho 400MHz - - 12.0 mmho 100MHz VDS = 15V, ID = 5mA, RiG = 1kW 400MHz - - 2.0 dB - - 4.0 dB 100MHz VDS = 15V, ID = 5mA, RiG = 1kW 400MHz 18 - - dB 10 - - dB 100MHz VDS = 15V, VGS = 0 - - 1000 mmhos 400MHz - - 4000 mmhos Input Susceptance IM(Yis) Functional Characteristics Noise Figure Common Source Power Gain Output Susceptance NF Gps IM(Yos) Note 1. tp = 100ms, Duty Cycle = 10%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min G S D .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max NOTE: Drain and Source are interchangeable.