IRF7304QPBF - International Rectifier

HEXFET® Power MOSFET

08/02/10

Description

IRF7304QPbF

Top View

VDSS = -20V

RDS(on) = 0.090Ω

Thermal Resistance Ratings

Parameter Typ. Max. Units

RθJA Maximum Junction-to-Ambient 62.5 °C/W

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SO-8

lAdvanced Process Technology

lUltra Low On-Resistance

lDual P Channel MOSFET

lSurface Mount

lAvailable in Tape & Reel

l150°C Operating Temperature

lLead-Free

These HEXFET® Power MOSFET's in a Dual

SO-8 package utilize the lastest processing

techniques to achieve extremely low on-resistance

per silicon area. Additional features of these

HEXFET Power MOSFET's are a 150°C junction

operating temperature, fast switching speed and

improved repetitive avalanche rating. These

benefits combine to make this design an extremely

efficient and reliable device for use in a wide

variety of applications.

The efficient SO-8 package provides enhanced

thermal characteristics and dual MOSFET die

capability making it ideal in a variety of power

applications. This dual, surface mount SO-8 can

dramatically reduce board space and is also

available in Tape & Reel.

Parameter Max. Units

ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ -4.5V -4.7

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3

ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A

IDM Pulsed Drain Current -17

@TA = 25°C Power Dissipation 2.0

Linear Derating Factor 0.016

VGS Gate-to-Source Voltage ±12 V

dv/dt Peak Diode Recovery dv/dt -5.0 V/ns

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Absolute Maximum Ratings

W/°C

PD - 96104A

IRF7304QPbF

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Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -20   V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient  -0.012  V/°C Reference to 25°C, ID = -1mA

  0.090 VGS = -4.5V, ID = -2.2A 

  0.140 VGS = -2.7V, ID = -1.8A 

VGS(th) Gate Threshold Voltage -0.70   V VDS = VGS, ID = -250µA

gfs Forward Transconductance 4.0   S VDS = -16V, ID = -2.2A

  -1.0 VDS = -16V, VGS = 0V

  -25 VDS = -16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage   -100 VGS = -12V

Gate-to-Source Reverse Leakage   100 VGS = 12V

QgTotal Gate Charge   22 ID = -2.2A

Qgs Gate-to-Source Charge   3.3 nC VDS = -16V

Qgd Gate-to-Drain ("Miller") Charge   9.0 VGS = -4.5V, See Fig. 6 and 12 

td(on) Turn-On Delay Time  8.4  VDD = -10V

trRise Time  26  ID = -2.2A

td(off) Turn-Off Delay Time  51  RG = 6.0Ω

tfFall Time  33  RD = 4.5Ω, See Fig. 10 

Between lead tip

and center of die contact

Ciss Input Capacitance  610  VGS = 0V

Coss Output Capacitance  310  pF VDS = -15V

Crss Reverse Transfer Capacitance  170   = 1.0MHz, See Fig. 5

Notes:

Parameter Min. Typ. Max. Units Conditions

SContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage   -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V 

trr Reverse Recovery Time  56 84 ns TJ = 25°C, IF = -2.2A

Qrr Reverse RecoveryCharge  71 110 nC di/dt = 100A/µs 

ton Forward Turn-On Time

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

  -17

  -2.5

IGSS

IDSS Drain-to-Source Leakage Current

LSInternal Source Inductance  6.0 

LDInternal Drain Inductance  4.0 

µA

Ω

RDS(ON) Static Drain-to-Source On-Resistance

IRF7304QPbF

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Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

0.1

100

0.01 0.1 1 10 100

20µs PULSE WIDTH

T = 25°C

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

VGS

TOP - 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

BOTTOM - 1.5V

-1.5V

0.1

100

0.01 0.1 1 10 100

20µs PULSE WIDTH

T = 150°C

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

VGS

TOP - 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

BOTTOM - 1.5V

-1.5V

0.1

100

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

T = 25°C T = 150°C

-I , Drain-to-Source Current (A)

-V , Gate-to-Source Voltage (V)

V = -15V

20µs PULSE WIDTH

0.0

0.5

1.0

1.5

2.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

R , Drain-to-Source On Resistance

DS(on)

(Normalized)

I = -3.6A

V = -4.5V

IRF7304QPbF

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Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

500

1000

1500

1 10 100

C, Capacitance (pF)

-V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0 5 10 15 20 25

FOR TEST CIRCUIT

SEE FIGURE 12

-V , Gate-to-Source Voltage (V)

Q , Total Gate Charge (nC)

I = -2.2A

V = -16V

0.1

100

0.3 0.6 0.9 1.2 1.5

T = 25°C

T = 150°C

V = 0V

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

100

1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

= 150 C

= 25 C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)

1ms

10ms

IRF7304QPbF

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Fig 10a. Switching Time Test Circuit

90%

10%

d(on)

d(off)

VDS

-4.5 V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

Fig 10b. Switching Time Waveforms

VGS

VDD

D.U.T.

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150

0.0

1.0

2.0

3.0

4.0

5.0

T , Case Temperature ( C)

-I , Drain Current (A)

IRF7304QPbF

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Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit

QGS QGD

Charge

D.U.T. V

-3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

-4.5 V

IRF7304QPbF

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P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period







VDD

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

VGS*

Peak Diode Recovery dv/dt Test Circuit

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 13. For P-Channel HEXFETS

IRF7304QPbF

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SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

.189

.1497

0°

.013

.050 BAS IC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BAS IC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MI N MAX

MILLIMETERSINCHES

MI N MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BAS IC 0.635 BAS IC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C A B

8X b

0.10 [.004]

4312

F OOT P R I NT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OU T L I NE CONF OR MS T O J E DE C OU T L I NE MS -01 2AA.

NOT E S :

1. DIMENS IONING & T OLERANCING PE R AS ME Y14.5M-1994.

2. CONT ROLLING DIMENS ION: MILLIMET E R

3. DI ME NS IONS AR E S HOWN I N MI L L I ME T E R S [INCH E S ].

5 DI MENS ION DOE S NOT INCL UDE MOL D PROT RUS IONS .

6 DI MENS ION DOE S NOT INCL UDE MOL D PROT RUS IONS .

MOLD PROT RUS IONS NOT T O EXCE ED 0.25 [.010].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBS TRATE.

MOLD PROT RUS IONS NOT T O EXCE ED 0.15 [.006].

8X 1.78 [.070]

DAT E CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7101

Y = LAST DIGIT OF THE YEAR

PART NUMBER

LOT CODE

WW = WEEK

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

A = ASSEMBLY SITE CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF7304QPbF

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330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/2010

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.