2011-09-30
1
BCW66K
1
2
3
NPN Silicon AF Transistors
• For general AF applications
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCW68 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCW66KF
BCW66KG
BCW66KH
EFs
EGs
EHs
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
SOT23
SOT23
SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 45 V
Collector-base voltage VCBO 75
Emitter-base voltage VEBO 5
Collector current IC800 mA
Peak collector current, tp ≤ 10 ms ICM 1 A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS ≤ 115 °C
Ptot 500 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 70 K/W
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BCW66K
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 45 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 75 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.02
20
µA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEBO - - 20 nA
DC current gain2)
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.F
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.G
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.H
IC = 100 mA, VCE = 1 V, hFE-grp.F
IC = 100 mA, VCE = 1 V, hFE-grp.G
IC = 100 mA, VCE = 1 V, hFE-grp.H
IC = 500 mA, VCE = 1 V, hFE-grp.F, G, H
hFE
75
110
180
100
160
250
40
-
-
-
160
250
350
-
-
-
-
250
400
630
-
-
Collector-emitter saturation voltage2)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
-
-
-
0.3
0.45
V
Base emitter saturation voltage2)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VBEsat
-
-
-
-
1.25
1.25
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
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BCW66K
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
fT- 170 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 3 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 40 -
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BCW66K
DC current gain hFE = ƒ(IC)
VCE = 1 V
10 10 10 10
BCW 65/66 EHP00396
h
mA
-1 0 2 3
FE
3
10
10
2
0
10
5
5
10
1
1
10
5
100
25
-50
555
C
Ι
˚C
˚C
˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
10 0 600
BCW 65/66 EHP00395
V
CE sat
10
mA
10
10
10
3
2
1
0
-1
5
5
5
mV
200 400 800
150
25
-50
C
Ι
˚C
˚C
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
10 03
BCW 65/66 EHP00394
V
BE sat
10
mA
10
Ι
C
10
10
3
2
1
0
-1
5
5
5
V
12 4
150
25
-50 ˚C
˚C
˚C
Collector cutoff current ICBO = ƒ(TA)
VCB = VCEmax
10 0 50 100 150
BCW 65/66 EHP00393
TA
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
5
4
3
2
1
0
max
typ
˚C
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BCW66K
Transition frequency fT = ƒ(IC)
VCE = 5 V
10
EHP00391BCW 65/66
03
10mA
1
10
3
10
5
5
101102
102
C
T
fMHz
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 2 4 6 8 10 12 14 16 V20
RTF-1
0
5
10
15
20
25
30
35
40
45
50
55
60
pF
75
RTF-2
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 150
0
50
100
150
200
250
300
350
400
450
550
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00392BCW 65/66
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
PDC
P
p
t
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BCW66K
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-09-30
7
BCW66K
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
