ES1A thru ES1J
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
All Dimensions in millimeter
SMA
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
4.06 4.57
2.92 2.29
1.27 1.63
0.31 0.15
4.83 5.59
0.05 0.20
2.01 2.62
0.76 1.52
NOTES : 1.Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
SURFACE MOUNT
SUPER FAST RECTIFIERS
REVERSE VOLTAGE -
50
to
400
Volts
FORWARD CURRENT -
1.0
Ampere
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 4, Mar-2005, KSGA01
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
1.0
30
0.92
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance (Note 3)
Typical Junction Capacitance (Note 2)
UNIT
CHARACTERISTICS SYMBOL
@TL =110 C
ES1A
Maximum Reverse Recovery Time (Note 1)
@TJ =25 C
@TJ=125 C
Typical Reverse Recovery Time
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
T
RR
C
J
R
θ
JL
R
θ
JL
T
J
T
STG
50
35
50
ES1B
100
70
100
ES1C
150
105
150
ES1D
200
140
200
ES1G
400
280
400
ES1J
600
420
600
V
V
V
1.25 1.30
A
A
V
uA
ns
ns
pF
C/W
C
C
5.0
200
25
20
10
25
-55 to + 150
-55 to + 150
30
35
B
A
C
H
E
F
G
D
SMA