VISHAY
BC846 to BC849
Document Number 85115
Rev. 1.2, 12-Mar-04
Vishay Semiconductors
www.vishay.com
1
18822
1
2
3
1
3
2E
B
C
Small Signal Transistors (NPN)
Features
• These transistors are subdivided into three groups
(A, B, and C) according to their current gain. The
type BC846 is available in groups A and B, how-
ever, the types BC847 and BC848 can be supplied
in all three groups. The BC849 is a low noise type
available in groups B and C. As complementary
types, the PNP transistors BC856...BC859 are
recommended.
• NPN Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part Ordering code Marking Remarks
BC846A BC846A-GS18 or BC846A-GS08 1A Tape and Reel
BC846B BC846B-GS18 or BC846B-GS08 1B Tape and Reel
BC847A BC847A-GS18 or BC847A-GS08 1E Tape and Reel
BC847B BC847B-GS18 or BC847B-GS08 1F Tape and Reel
BC847C BC847C-GS18 or BC847C-GS08 1G Tape and Reel
BC848A BC848A-GS18 or BC848A-GS08 1J Tape and Reel
BC848B BC848B-GS18 or BC848B-GS08 1K Tape and Reel
BC848C BC848C-GS18 or BC848C-GS08 1L Tape and Reel
BC849B BC849B-GS18 or BC849B-GS08 2B Tape and Reel
BC849C BC849C-GS18 or BC849C-GS08 2C Tape and Reel
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2
Document Number 85115
Rev. 1.2, 12-Mar-04
VISHAY
BC846 to BC849
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout on third page.
Maximum Thermal Resistance
1) Device on fiberglass substrate, see layout on third page.
Electrical DC Characteristics
Parameter Test condition Part Symbol Value Unit
Collector - base voltage BC846 VCBO 80 V
BC847 VCBO 50 V
BC848 VCBO 30 V
BC849 VCBO 30 V
Collector - emitter voltage BC846 VCES 80 V
BC847 VCES 50 V
BC848 VCES 30 V
BC849 VCES 30 V
BC846 VCEO 65 V
BC847 VCEO 45 V
BC848 VCEO 30 V
BC849 VCEO 30 V
Emitter - base voltage BC846 VEBO 6V
BC847 VEBO 6V
BC848 VEBO 5V
BC849 VEBO 5V
Collector current IC100 mA
Collector peak current ICM 200 mA
Peak base current IBM 200 mA
Peak emitter current - IEM 200 mA
Power dissipation Tamb = 25 °C Ptot 3101) mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
RθJA 4501) °C/W
Thermal resistance junction to
substrate backside
RθSB 3201) °C/W
Junction temperature Tj150 °C
Storage temperature range TS- 65 to + 150 °C
Parameter Test condition Symbol Min Ty p. Max. Unit
Small signal current gain
(current gain group A)
VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 220
Small signal current gain
(current gain group B)
VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 330
Small signal current gain
(current gain group C)
VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 600
Input impedance
(current gain group A)
VCE = 5 V, IC = 2 mA, f = 1 kHz hie 1.6 2.7 4.5 kΩ
Input impedance
(current gain group B)
VCE = 5 V, IC = 2 mA, f = 1 kHz hie 3.2 4.5 8.5 kΩ
VISHAY
BC846 to BC849
Document Number 85115
Rev. 1.2, 12-Mar-04
Vishay Semiconductors
www.vishay.com
3
Electrical AC Characteristics
Input impedance
(current gain group C)
VCE = 5 V, IC = 2 mA, f = 1 kHz hie 68.715kΩ
Output admittance
(current gain group A)
VCE = 5 V, IC = 2 mA, f = 1 kHz hoe 18 30 µS
Output admittance
(current gain group B)
VCE = 5 V, IC = 2 mA, f = 1 kHz hoe 30 60 µS
Output admittance
(current gain group C)
VCE = 5 V, IC = 2 mA, f = 1 kHz hoe 60 110 µS
Reverse voltage transfer ratio
(current gain group A)
VCE = 5 V, IC = 2 mA, f = 1 kHz hre 1.5 x 10-4
Reverse voltage transfer ratio
(current gain group B)
VCE = 5 V, IC = 2 mA, f = 1 kHz hre 2 x 10-4
Reverse voltage transfer ratio
(current gain group C)
VCE = 5 V, IC = 2 mA, f = 1 kHz hre 3 x 10-4
DC current gain
(current gain group A)
VCE = 5 V, IC = 10 µAh
FE 90
DC current gain
(current gain group B)
VCE = 5 V, IC = 10 µAh
FE 150
DC current gain
(current gain group C)
VCE = 5 V, IC = 10 µAh
FE 270
DC current gain
(current gain group A)
VCE = 5 V, IC = 2 mA hFE 110 180 220
DC current gain
(current gain group B)
VCE = 5 V, IC = 2 mA hFE 200 290 450
DC current gain
(current gain group C)
VCE = 5 V, IC = 2 mA hFE 420 520 800
Collector saturation voltage IC = 10 mA, IB = 0.5 mA VCEsat 90 250 mV
IC = 100 mA, IB = 5 mA VCEsat 200 600 mV
Base saturation voltage IC = 10 mA, IB = 0.5 mA VBEsat 700 mV
IC = 100 mA, IB = 5 mA VBEsat 900 mV
Base-emitter voltage VCE = 5 V, IC = 2 mA VBEon 580 660 700 mV
VCE = 5 V, IC = 10 mA VBE 770 mV
Collector-base cut-off current VCB = 30 V ICBO 15 nA
VCB = 30 V, TJ = 150 °C ICBO 5µA
Parameter Test condition Part Symbol Min Typ. Max Unit
Gain bandwidth product VCE = 5 V, IC = 10 mA,
f = 100 MHz
fT300 MHz
Collector-base capacitance VCB = 10 V, f = 1 MHz CCBO 3.5 6 pF
Emitter - base capacitance VEB = 0.5 V, f = 1 MHz CEBO 9pF
Noise figure VCE = 5 V, IC = 200 µA,
RG = 2 kΩ, f = 1 kHz,
∆f = 200 Hz
BC846 F 2 10 dB
VCE = 5 V, IC = 200 µA,
RG = 2 kΩ, f = 1 kHz,
∆f = 200 Hz
BC847 F 2 10 dB
BC848 F 2 10 dB
BC849 F 1.2 4 dB
VCE = 5 V, IC = 200 µA,
RG = 2 kΩ, f = (30 to 15000) Hz
BC849 F 1.4 4 dB
Parameter Test condition Symbol Min Typ. Max. Unit
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4
Document Number 85115
Rev. 1.2, 12-Mar-04
VISHAY
BC846 to BC849
Vishay Semiconductors
Layout for RθJA test
Thickness: Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)
Fig. 1 Admissible Power Dissipation vs. Temperature of
Substrate Backside
200
18823
T
amb
- Ambient Temperature ( °C)
500
400
300
200
100
20 40 60 80 100 120 140 160 1800
0
P - Admissible Power Dissipation ( mW )
tot
Fig. 2 DC Current Gain vs. Collector Current
-50°C
18824
1
10
100
1000
10.1 10 1000.01
h - DC Current Gain
FE
I - Collector Current ( mA )
C
VCE =5V
25 °C
Tamb =100°C
VISHAY
BC846 to BC849
Document Number 85115
Rev. 1.2, 12-Mar-04
Vishay Semiconductors
www.vishay.com
5
Fig. 3 Pulse Thermal Resistance vs. Pulse Duration (normalized)
Fig. 4 Collector-Base Cutoff Curent vs. Ambient Temperature
Fig. 5 Collector Current vs. Base-Emitter Voltage
t
p
- Pulse Length ( s )
ν/T=t
p
P
I
T
t
p
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
18825
R - Pulse Thermal Resistance
thSB
ν=0
10
0
10
-1
10
-2
10
-3
10
100
1000
10000
1
0.1
200
18826
T
amb
- Ambient Temperature (°C)
20 40 60 80 100 120 140 160 1800
I - Collector-Base Cutoff Current ( nA )
CBO
V:
CBO
VCES
Test voltage
equal to the given
maximum value
maximum
typical
I - Collector Current ( mA )
C
18827
V
BE
- Base-Emitter Voltage(V)
amb =100°CT
-50°C
VCE =5V
25°C
1
10
0.1
100
0.2010.4 0.6 0.8
Fig. 6 Collector Base Capacitance, Emitter base Capacitance vs.
Bias Voltage
Fig. 7 Collector Saturation Voltage vs. Collector Current
Fig. 8 Relative h-Parameters vs. Collector Current
C / C - Collector / Emitter
Base Capacitance ( pF )
CBO EBO
18828
V
CBO
,V
EBO
- Reverse Bias Voltage(V)
0
2
4
6
8
10
0.1 101
amb =25°CT
EBO
C
CBO
C
V - Collector Saturation Voltage(V)
CEsat
0
0.1
0.2
0.3
0.4
0.5
18829
I
C
- Collector Current ( mA )
0.1 1 10 100
amb =100°CT
-50°C
25°C
I/I=20
CB
18830
1
10
0.1
100
0.1 110
h (I )/h (I =2mA)
eeCC
IC- Collector Current ( mA )
amb =25°CT
VCE =5V
hie
hre
hfe
hoe
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6
Document Number 85115
Rev. 1.2, 12-Mar-04
VISHAY
BC846 to BC849
Vishay Semiconductors
Fig. 9 Gain-Bandwidth Product vs. Collector Current
Fig. 10 Noise Figure vs. Collector Current
Fig. 11 Noise Figure vs. Collector Current
amb =25°CT
10
100
1000
0.1 110 100
VCE =10V
5V 2V
f - Gain_Bandwidth Product ( MHz )
T
I - Collector Current ( mA )
C
18831
18832
F - Noise Figure ( dB )
amb =25°CT
VCE =5V
f=1kHz
RG=1MΩ100 kΩ10 kΩ
1kΩ
500 Ω
0
2
4
6
8
10
12
14
16
18
20
100.10.010.001 1
IC- Collector Current ( mA )
18833
F - Noise Figure ( dB )
0
2
4
6
8
10
12
14
16
18
20
100.10.010.001 1
IC- Collector Current ( mA )
amb =25°CT
VCE =5V
f = 120 Hz
RG=1MΩ100 kΩ10 kΩ
1kΩ
1kΩ
500 Ω
Fig. 12 Noise Figure vs. Collector Emitter Voltage
18834
F - Noise Figure ( dB )
0
2
4
6
8
10
12
14
16
18
20
10 1000.1 1
VCE - Collector Emitter Voltage(V)
amb =25°CT
IC= 0.2 mA
f=1kHz
Df = 200 Hz
RG=2kΩ
VISHAY
BC846 to BC849
Document Number 85115
Rev. 1.2, 12-Mar-04
Vishay Semiconductors
www.vishay.com
7
Package Dimensions in mm (Inches)
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.8 (0.031)
12
3
17418
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
max 0.1 (.004)
1.33 (.052)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.125 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
ISO Method A
2.4 (.094)
2.6 (.102)
Mounting Pad Layout
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8
Document Number 85115
Rev. 1.2, 12-Mar-04
VISHAY
BC846 to BC849
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
