BC846 to BC849 VISHAY Vishay Semiconductors Small Signal Transistors (NPN) Features * These transistors are subdivided into three groups (A, B, and C) according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended. * NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. * Especially suited for automatic insertion in thick and thin-film circuits. C 3 2 1 1 B 3 E 2 18822 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part Ordering code Marking Remarks BC846A BC846A-GS18 or BC846A-GS08 1A Tape and Reel BC846B BC846B-GS18 or BC846B-GS08 1B Tape and Reel BC847A BC847A-GS18 or BC847A-GS08 1E Tape and Reel BC847B BC847B-GS18 or BC847B-GS08 1F Tape and Reel BC847C BC847C-GS18 or BC847C-GS08 1G Tape and Reel BC848A BC848A-GS18 or BC848A-GS08 1J Tape and Reel BC848B BC848B-GS18 or BC848B-GS08 1K Tape and Reel BC848C BC848C-GS18 or BC848C-GS08 1L Tape and Reel BC849B BC849B-GS18 or BC849B-GS08 2B Tape and Reel BC849C BC849C-GS18 or BC849C-GS08 2C Tape and Reel Document Number 85115 Rev. 1.2, 12-Mar-04 www.vishay.com 1 BC846 to BC849 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Collector - base voltage Collector - emitter voltage Emitter - base voltage Part Symbol Value Unit BC846 VCBO 80 V BC847 VCBO 50 V BC848 VCBO 30 V BC849 VCBO 30 V BC846 VCES 80 V BC847 VCES 50 V BC848 VCES 30 V BC849 VCES 30 V BC846 VCEO 65 V BC847 VCEO 45 V BC848 VCEO 30 V BC849 VCEO 30 V BC846 VEBO 6 V BC847 VEBO 6 V BC848 VEBO 5 V BC849 VEBO 5 V IC 100 mA ICM 200 mA mA Collector current Collector peak current Peak base current Peak emitter current Tamb = 25 C Power dissipation 1) IBM 200 - IEM 200 mA Ptot 3101) mW Device on fiberglass substrate, see layout on third page. Maximum Thermal Resistance Symbol Value Unit Thermal resistance junction to ambient air Parameter RJA 4501) C/W Thermal resistance junction to substrate backside RSB 3201) C/W Junction temperature Tj 150 C Storage temperature range TS - 65 to + 150 C 1) Test condition Device on fiberglass substrate, see layout on third page. Electrical DC Characteristics Test condition Symbol Small signal current gain (current gain group A) Parameter VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 220 Small signal current gain (current gain group B) VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 330 Small signal current gain (current gain group C) VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 600 Input impedance (current gain group A) VCE = 5 V, IC = 2 mA, f = 1 kHz hie 1.6 Input impedance (current gain group B) VCE = 5 V, IC = 2 mA, f = 1 kHz hie 3.2 www.vishay.com 2 Min Typ. Max. Unit 2.7 4.5 k 4.5 8.5 k Document Number 85115 Rev. 1.2, 12-Mar-04 BC846 to BC849 VISHAY Vishay Semiconductors Test condition Symbol Min Typ. Max. Unit Input impedance (current gain group C) Parameter VCE = 5 V, IC = 2 mA, f = 1 kHz hie 6 8.7 15 k Output admittance (current gain group A) VCE = 5 V, IC = 2 mA, f = 1 kHz hoe 18 30 S Output admittance (current gain group B) VCE = 5 V, IC = 2 mA, f = 1 kHz hoe 30 60 S Output admittance (current gain group C) VCE = 5 V, IC = 2 mA, f = 1 kHz hoe 60 110 S Reverse voltage transfer ratio (current gain group A) VCE = 5 V, IC = 2 mA, f = 1 kHz hre 1.5 x 10-4 Reverse voltage transfer ratio (current gain group B) VCE = 5 V, IC = 2 mA, f = 1 kHz hre 2 x 10-4 Reverse voltage transfer ratio (current gain group C) VCE = 5 V, IC = 2 mA, f = 1 kHz hre 3 x 10-4 DC current gain (current gain group A) VCE = 5 V, IC = 10 A hFE 90 DC current gain (current gain group B) VCE = 5 V, IC = 10 A hFE 150 DC current gain (current gain group C) VCE = 5 V, IC = 10 A hFE 270 DC current gain (current gain group A) VCE = 5 V, IC = 2 mA hFE 110 180 220 DC current gain (current gain group B) VCE = 5 V, IC = 2 mA hFE 200 290 450 DC current gain (current gain group C) VCE = 5 V, IC = 2 mA hFE 420 520 800 Collector saturation voltage IC = 10 mA, IB = 0.5 mA VCEsat 90 250 mV IC = 100 mA, IB = 5 mA VCEsat 200 600 mV Base saturation voltage Base-emitter voltage Collector-base cut-off current IC = 10 mA, IB = 0.5 mA VBEsat 700 mV IC = 100 mA, IB = 5 mA VBEsat 900 mV VCE = 5 V, IC = 2 mA VBEon 700 mV VCE = 5 V, IC = 10 mA VBE 770 mV VCB = 30 V ICBO 15 nA VCB = 30 V, TJ = 150 C ICBO 5 A 580 660 Electrical AC Characteristics Parameter Test condition Part Symbol Min Typ. Gain bandwidth product VCE = 5 V, IC = 10 mA, f = 100 MHz fT 300 Collector-base capacitance VCB = 10 V, f = 1 MHz CCBO 3.5 Emitter - base capacitance VEB = 0.5 V, f = 1 MHz CEBO 9 Noise figure VCE = 5 V, IC = 200 A, RG = 2 k, f = 1 kHz, f = 200 Hz BC846 F VCE = 5 V, IC = 200 A, RG = 2 k, f = 1 kHz, f = 200 Hz BC847 F VCE = 5 V, IC = 200 A, RG = 2 k, f = (30 to 15000) Hz Document Number 85115 Rev. 1.2, 12-Mar-04 Max Unit MHz 6 pF 2 10 dB 2 10 dB pF BC848 F 2 10 dB BC849 F 1.2 4 dB BC849 F 1.4 4 dB www.vishay.com 3 BC846 to BC849 VISHAY Vishay Semiconductors Layout for RJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 1000 500 Tamb = 100 C 400 h FE - DC Current Gain Ptot - Admissible Power Dissipation ( mW ) Typical Characteristics (Tamb = 25 C unless otherwise specified) 300 200 100 0 0 18823 Tamb - Ambient Temperature ( C ) 4 25 C 10 1 0.01 20 40 60 80 100 120 140 160 180 200 Fig. 1 Admissible Power Dissipation vs. Temperature of Substrate Backside www.vishay.com 100 18824 - 50 C VCE = 5 V 0.1 1 10 I C - Collector Current ( mA ) 100 Fig. 2 DC Current Gain vs. Collector Current Document Number 85115 Rev. 1.2, 12-Mar-04 BC846 to BC849 VISHAY Vishay Semiconductors 10 0.1 10 -1 0.05 0.02 10 -2 0.01 tp 0.005 = tp /T = 0 PI T 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p - Pulse Length ( s ) 18825 I CBO - Collector-Base Cutoff Current ( nA ) Fig. 3 Pulse Thermal Resistance vs. Pulse Duration (normalized) 10000 maximum 1000 100 typical 10 Test voltage VCBO : equal to the given maximum value VCES 1 0.1 0 20 40 60 80 100 120 140 160 180 200 Tamb = 100 C - 50 C 0.5 18827 0.2 0.4 0.6 0.8 VBE - Base-Emitter Voltage ( V ) Fig. 5 Collector Current vs. Base-Emitter Voltage Document Number 85115 Rev. 1.2, 12-Mar-04 I C / I B = 20 0.4 0.3 0.2 Tamb = 100 C 0.1 25 C - 50 C 0 0.1 1 10 I C - Collector Current ( mA ) 100 Fig. 7 Collector Saturation Voltage vs. Collector Current 10 1 VCE = 5 V Tamb = 25 C h ie h re 1 h fe h oe 25 C 0 1 10 VCBO , V EBO - Reverse Bias Voltage ( V ) 100 1 0.1 Tamb = 25 C Fig. 6 Collector Base Capacitance, Emitter base Capacitance vs. Bias Voltage h e ( I C ) / h e ( IC = 2 mA ) I C - Collector Current ( mA ) 2 18828 VCE = 5 V 10 C CBO 4 18829 Fig. 4 Collector-Base Cutoff Curent vs. Ambient Temperature 100 C EBO 6 0 0.1 Tamb - Ambient Temperature ( C ) 18826 8 Base Capacitance ( pF ) 0.2 C CBO / C EBO - Collector / Emitter 0.5 VCEsat - Collector Saturation Voltage ( V ) R thSB - Pulse Thermal Resistance 10 0 0.1 0.1 18830 10 1 I C - Collector Current ( mA ) Fig. 8 Relative h-Parameters vs. Collector Current www.vishay.com 5 BC846 to BC849 VISHAY Vishay Semiconductors 20 Tamb = 25 C 18 16 VCE = 10 V 5V F - Noise Figure ( dB ) f T - Gain_Bandwidth Product ( MHz ) 1000 2V 100 14 12 I C = 0.2 mA R G = 2 k f = 1 kHz Df = 200 Hz Tamb = 25 C 10 8 6 4 2 10 0.1 18831 10 1 I C - Collector Current ( mA ) 18834 Fig. 9 Gain-Bandwidth Product vs. Collector Current 20 F - Noise Figure ( dB ) 18 16 0 100 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) Fig. 12 Noise Figure vs. Collector Emitter Voltage VCE = 5 V f = 1 kHz Tamb = 25 C 14 12 R G = 1 M 100 k 10 k 10 8 6 4 1 k 2 0 0.001 18832 500 0.01 0.1 1 I C - Collector Current ( mA ) 10 Fig. 10 Noise Figure vs. Collector Current F - Noise Figure ( dB ) 20 VCE = 5 V 18 f = 120 Hz Tamb = 25 C 16 R G = 1 M 14 500 12 100 k 10 k 10 1 k 8 6 4 2 0 0.001 18833 1 k 0.01 0.1 1 I C - Collector Current ( mA ) 10 Fig. 11 Noise Figure vs. Collector Current www.vishay.com 6 Document Number 85115 Rev. 1.2, 12-Mar-04 BC846 to BC849 VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.8 (0.031) 0.4 (.016) 3 2 1.15 (.045) 0.125 (.005) 0.95 (0.037) 0.95 (.037) 0.95 (0.037) 0.95 (.037) max 0.1 (.004) 0.95 (.037) 2.0 (0.079) 0.175 (.007) 1 1.33 (.052) 1.43 (.056) 0.9 (0.035) ISO Method A 2.6 (.102) 0.4 (.016) Document Number 85115 Rev. 1.2, 12-Mar-04 0.4 (.016) 2.4 (.094) 17418 www.vishay.com 7 BC846 to BC849 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 85115 Rev. 1.2, 12-Mar-04