Eee kT CME ES TERS ne J111 J112 J113 / TO-92 D Discrete POWER & Signal Technologies MMBFJ111 MMBFJ112 MMBFJ113 G Ss SOT-23 Ss Mark: 6P /6R/6S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Abso | ute Maxi m u m Ratin gs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voe Drain-Gate Voltage 35 Vv Ves Gate-Source Voltage - 35 Vv lor Forward Gate Current 50 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J111-J113 *MMBFJ111 Pp Total Device Dissipation 350 225 mW Derate above 25C 2.8 1.8 mWw/C Roc Thermal Resistance, Junction to Case 125 C/W Resa Thermal Resistance, Junction to Ambient 357 556 C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation CLLPAGWNW / CLLPAGININ / LELPSEININ / OLE / ChE / EeElectrical Characteristics TA = 25C unless otherwise noted N-Channel Switch (continued) Symbol Parameter Test Conditions Min | Max | Units OFF CHARACTERISTICS Vsryess Gate-Source Breakdown Voltage le=-1.0 pA, Vos = 0 -35 Vv lass Gate Reverse Current Ves=-15V, Vos = 0 - 1.0 nA Vesgiot) Gate-Source Cutoff Voltage Vos = 5.0 V, Ip = 1.0 pA J111 - 3.0 - 10 Vv J112 - 1.0 - 5.0 Vv J113 -0.5 - 3.0 Vv ID (ort) Gate-Source Cutoff Voltage Vos = 5.0 V, Ves=-10V 1.0 nA ON CHARACTERISTICS loss Zero-Gate Voltage Drain Current* Vos = 15 V, Ieg= 0 J111 20 mA J112 5.0 mA J113 2.0 mA rpsion) Drain-Source On Resistance Vos < 0.1 V, Veg = 0 J111 30 Q J112 50 Q J113 100 Q SMALL-SIGNAL CHARACTERISTICS Cagion) Drain Gate & Source Gate On Vos = 0, Ves = 0, f = 1.0 MHz 28 pF Cegion) Capacitance dg(off) Drain-Gate Off Capacitance Vos = 0, Vag = - 10 V, f = 1.0 MHz 5.0 pF Crgioth) Source-Gate Off Capacitance Vos = 0, Ves = - 10 V, f = 1.0 MHz 5.0 pF *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 3.0% Typical Characteristics a Oo |p - DRAIN CURRENT (mA) Ves =0V Common Drain-Source Ta= 25C Vest = -2.0V 0.4 0.8 1.2 1.6 Vps- DRAIN-SOURCE VOLTAGE (V) Parameter Interactions oa oS Oo on Oo ss NM Oo Oo 9 ts - TRANSCONDUCTANCE (mmhos) o I a 2 -4 ps -2 Ipss , gis @ Vps = 15V, qs= OPULSED ps @ 1.0mA, Vgg = 0 V spoil) @ Vpg = 15V, Ip=10nA -5 Ves (OFF) - GATE CUTOFF VOLTAGE (V) () JONVLSISSY NO. NIVHd - 7 4 5 -10 CLLPAGWNW / CLLPAGININ / LELPSEININ / OLE / ChE / EeN-Channel Switch (continued) Typical Characteristics (continued) Transfer Characteristics 40 Vasiorn = 30 V < - 25C 5 30 125C iu Vesiotn #720 c 125C B 20 25C z ~ 55C a Pra 9 10 a 0 | -2 -3 Vgs- GATE-SOURCE VOLTAGE (V) Transfer Characteristics @ 30 Z NN Vesiotn =-2.0V E = 55C W tas Z 20 Pe A a NI Yess 20V 5 I - 55C a N 25C z 9 INO i 125C Q 10 = PSS Fr Vpg =15V 25 | a 0 -1 -2 -3 Vgs- GATE-SOURCE VOLTAGE (V) On Resistance vs Drain Current 100 12S Vago TYP = - 2.0V 50 F 25c 125C Vesiotn TYP =-7.0V 20 7 25C Trys @V gs =0 - 55C Ips - DRAIN "ON" RESISTANCE () 1 2 5 10 20 50 100 |p - DRAIN CURRENT (mA) |p -DRAIN CURRENT (mA) J ss - TRANSCONDUCTANCE (mmhos) I pg - NORMALIZED RESISTANCE Transfer Characteristics 16 Vesioin =7 1.8 V Vps=15V ~ 55C 12 125C 8 Vestry =-1-1V 125C 25C 4 7 0 0 -05 -1 -15 Vgs- GATE-SOURCE VOLTAGE (V) Transfer Characteristics 30 pS Vase ="1-8V ~] ep BC 20 he. pane, 25C eo | 125C SS Sy ~~ TN Vascotn =-1.1V 10 - 55C 25C 125C. Vos =15V WO 0 0 -05 -1 -15 Vgs- GATE-SOURCE VOLTAGE (V) Normalized Drain Resistance vs Bias Voltage Vesiorty @ 5.0V, 10: A Ips rps= V 1 Gs Vesoott) { 0 0.2 0.4 0.6 0.8 1 Ves /Vesott)- NORMALIZED GATE-SOURCE VOLTAGE (V) CLLPAGWNW / CLLPAGININ / LELPSEININ / OLE / ChE / EeN-Channel Switch (continued) Typical Characteristics (continued) Transconductance vs Drain Current 100 10 Vestn = -1.4V Vesiorn = 3.0V a oo oa 1 10 |p - DRAIN CURRENT (mA) 9 4, ~ TRANSCONDUCTANCE (mmhos) Capacitance vs Voltage 100 L & Lu g f =01- 1.0 MHz 5 2 2 10 < oO Cis (Vpg = 9) eg Cig (pg = 20) Q 2 Cis (Vps =) Oo 1 0 4 -8 -12 -16 -20 as - GATE-SOURCE VOLTAGE (V) Noise Voltage vs Current 100 [= v DG =15V > iS 9 a 10 > Ww a Oo = < oa 1 0.01 0.1 1 10 | p - DRAIN CURRENT (mA) Output Conductance vs Drain Current a oS Oo Tp =25C f= 1.0 kHz a Oo v a V as(off) =- 2.0V Vascoff) =- 0.85V om Q S 0.1 10 | p - DRAIN CURRENT (mA) 9,4, > OUTPUT CONDUCTANCE (# mhos) Noise Voltage vs Frequency 100 p@= 15V on Oo = 6.0 Hz@ f = 10 Hz, 100 Hz = 0.21 @f2 1.0 kHz a Oo en - NOISE VOLTAGE (nv / Hz) ao 1 0.01 1 10 100 1 - FREQUENCY (kHz) Power Dissipation vs Ambient Temperature 350 300 250 200 oa a o ao P, - POWER DISSIPATION (mW) a 5S Qo Qo 26 50 75 100 125 150 TEMPERATURE (C) CLLPAGWNW / CLLPAGININ / LELPSEININ / OLE / ChE / EeN-Channel Switch (continued) Typical Characteristics (continued) Switching Turn-On Time vs Gate-Source Voltage @25 & Vpp = 3.0V w t 220 r r APPROX. |) INDEPENDENT 5 story = 3.0V 9 =25C 3 15 A =25 ira 5 F410 z 2 = 5 & = 0 0 -2 -4 -6 -8 -10 V gsiot) - GATE-SOURCE CUTOFF VOLTAGE (V) Switching Turn-Off Time vs Drain Current @ g 100 Ty =25C Ww 2 80 Yaseen 224 Vpp = 3.0V i -40V as =-12V 2 60 - -7.5V a(ofty DEVICE 5 v INDEPENDENT P40 GS(off) Ww 3 = 20 t Cc Ww Q =z 0 - 0 2 4 6 8 10 |p - DRAIN CURRENT (mA) CLLPAGWNW / CLLPAGININ / LELPSEININ / OLE / ChE / Ee