2011-10-13
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BCP51...-BCP53...
PNP Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54 ... BCP56 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Type Marking Pin Configuration Package
BCP51
BCP51-16
BCP52-16
BCP53-10
BCP53-16
*
*
*
*
*
1=B
1=B
1=B
1=B
1=B
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
4=C
4=C
4=C
4=C
4=C
-
-
-
-
-
-
-
-
-
-
SOT223
SOT223
SOT223
SOT223
SOT223
* Marking is the same as type-name
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BCP51...-BCP53...
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BCP51
BCP52
BCP53
VCEO
45
60
80
V
Collector-base voltage
BCP51
BCP52
BCP53
VCBO
45
60
100
Emitter-base voltage VEBO 5
Collector current IC1 A
Peak collector current, tp 10 ms ICM 1.5
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS 120°C
Ptot 2 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 15 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-10-13
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BCP51...-BCP53...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCP51
IC = 10 mA, IB = 0 , BCP52
IC = 10 mA, IB = 0 , BCP53
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCP51
IC = 100 µA, IE = 0 , BCP52
IC = 100 µA, IE = 0 , BCP53
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
DC current gain1)
IC = 5 mA, VCE = 2 V
IC = 150 mA, VCE = 2 V, BCP51
IC = 150 mA, VCE = 2 V, BCP53-10
IC = 150 mA, VCE = 2 V, BCP51-16...BCP53-16
IC = 500 mA, VCE = 2 V
hFE
25
40
63
100
25
-
-
100
160
-
-
250
160
250
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.5 V
Base-emitter voltage1)
IC = 500 mA, VCE = 2 V
VBE(ON) - - 1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT- 125 - MHz
1Pulse test: t < 300µs; D < 2%
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BCP51...-BCP53...
DC current gain hFE = ƒ(IC)
VCE = 2 V
10
EHP00261BCP 51...53
04
10mA
0
10
3
10
5
5
101102
101
C
FE
h
Ι
3
10
2
10
C
100
5
25
C
-50
C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
10
EHP00264BCP 51...53
CEsat
V
0.4 V 0.8
0
10
1
10
2
4
10
5
5
Ι
C
mA
5
3
10
0.2 0.6
C
100
25
C
C
-50
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00263BCP 51...53
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
C
100
25
C
-50
C
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
0
10
EHP00262BCP 51...53
A
T
150
-1
4
10
Ι
CBO
nA
50 100
0
10
1
10
3
10
C
10
2
max
typ
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BCP51...-BCP53...
Transition frequency fT = ƒ(IC)
VCE = 10 V
10
EHP00260BCP 51...53
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
0.4
0.8
1.2
1.6
W
2.4
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
TP
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
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BCP51...-BCP53...
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7
±0.3
B0.25 M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
2011-10-13
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BCP51...-BCP53...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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