BCP51...-BCP53... PNP Silicon AF Transistors * For AF driver and output stages * High collector current * Low collector-emitter saturation voltage * Complementary types: BCP54 ... BCP56 (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCP51 * 1=B 2=C 3=E 4=C - - SOT223 BCP51-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP52-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP53-10 * 1=B 2=C 3=E 4=C - - SOT223 BCP53-16 * 1=B 2=C 3=E 4=C - - SOT223 * Marking is the same as type-name 1 2011-10-13 BCP51...-BCP53... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCP51 45 BCP52 60 BCP53 80 Collector-base voltage Unit VCBO BCP51 45 BCP52 60 BCP53 100 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current, tp 10 ms ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 2 W 150 C A mA TS 120C Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS -65 ... 150 Value 15 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-10-13 BCP51...-BCP53... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCP51 45 - - IC = 10 mA, IB = 0 , BCP52 60 - - IC = 10 mA, IB = 0 , BCP53 80 - - IC = 100 A, IE = 0 , BCP51 45 - - IC = 100 A, IE = 0 , BCP52 60 - - IC = 100 A, IE = 0 , BCP53 100 - - 5 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector-base cutoff current ICBO A VCB = 30 V, IE = 0 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 C - - 20 DC current gain1) - hFE IC = 5 mA, VCE = 2 V 25 - - IC = 150 mA, VCE = 2 V, BCP51 40 - 250 IC = 150 mA, VCE = 2 V, BCP53-10 63 100 160 IC = 150 mA, VCE = 2 V, BCP51-16...BCP53-16 100 160 250 IC = 500 mA, VCE = 2 V 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 125 - Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 100 MHz 1Pulse test: t < 300s; D < 2% 3 2011-10-13 BCP51...-BCP53... DC current gain hFE = (IC) Collector-emitter saturation voltage VCE = 2 V IC = (VCEsat ), hFE = 10 10 3 h FE BCP 51...53 EHP00261 5 C 10 2 BCP 51...53 10 4 EHP00264 mA 10 3 100 C 25 C 5 -50 C 100 C 25 C -50 C 5 10 2 5 10 1 10 1 5 5 10 0 0 10 10 1 10 2 10 0 mA 10 4 10 3 0 0.2 0.6 0.4 C V V CEsat Base-emitter saturation voltage Collector cutoff current ICBO = (TA) IC = (VBEsat), hFE = 10 VCBO = 30 V 10 4 C BCP 51...53 EHP00263 10 4 CBO mA BCP 51...53 EHP00262 nA max 10 3 10 0.8 3 100 C 25 C -50C 10 2 10 2 typ 10 1 10 1 10 0 10 0 0 0.2 0.4 0.6 0.8 V 10 -1 1.2 V BEsat 0 50 100 C 150 TA 4 2011-10-13 BCP51...-BCP53... Transition frequency fT = (IC) VCE = 10 V BCP 51...53 10 3 Total power dissipation P tot = (TS) EHP00260 2.4 MHz W 5 Ptot fT 1.6 10 2 1.2 5 0.8 0.4 10 1 10 1 10 0 10 2 mA 0 0 10 3 15 30 45 60 90 105 120 C 75 150 TS C Permissible Pulse Load RthJS = (tp) Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 Ptotmax/PtotDC RthJS 10 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp TP 5 2011-10-13 Package SOT223 1.60.1 6.5 0.2 A 0.1 MAX. 3 0.1 7 0.3 3 2 0.5 MIN. 1 2.3 0.7 0.1 B 15 MAX. 4 3.5 0.2 Package Outline BCP51...-BCP53... 4.6 0.28 0.04 0...10 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 6 2011-10-13 BCP51...-BCP53... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-10-13