BPW21R
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96 1 (5)
Silicon PN Photodiode
Description
BPW21R is a planar Silicon PN photodiode in a hermeti-
cally sealed short TO–5 case, especially designed for high
precision linear applications.
Due to its extremely high dark resistance, the short circuit
photocurrent is linear over seven decades of illumination
level.
On the other hand, there is a strictly logarithmic correla-
tion between open circuit voltage and illumination over
the same range.
The device is equipped with a flat glass window with built
in color correction filter, giving an approximation to the
spectral response of the human eye.
Features
D
Hermetically sealed TO–5 case
D
Flat glass window with built–in color correction fil-
ter for visible radiation
D
Cathode connected to case
D
Wide viewing angle ϕ = ± 50
°
D
Large radiant sensitive area (A=7.5 mm 2)
D
Suitable for visible radiation
D
High sensitivity
D
Low dark current
D
High shunt resistance
D
Excellent linearity
D
For photodiode and photovoltaic cell operation
94 8394
Applications
Sensor in exposure and color measuring purposes
BPW21R
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
2 (5)
Absolute Maximum Ratings
Tamb = 25
_
C
Parameter Test Conditions Symbol Value Unit
Reverse Voltage VR10 V
Power Dissipation Tamb
x
50
°
C PV300 mW
Junction Temperature Tj125
°
C
Operating Temperature Range Tamb –55...+125
°
C
Storage Temperature Range Tstg –55...+125
°
C
Soldering Temperature t
x
5 s Tsd 260
°
C
Thermal Resistance Junction/Ambient RthJA 250 K/W
Basic Characteristics
Tamb = 25
_
C
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA VF1.0 1.3 V
Breakdown Voltage IR = 20
m
A, E = 0 V(BR) 10 V
Reverse Dark Current VR = 5 V, E = 0 Iro 2 30 nA
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 CD1.2 nF
p
VR = 5 V, f = 1 MHz, E = 0 CD400 pF
Dark Resistance VR = 10 mV RD38 G
W
Open Circuit Voltage EA = 1 klx Vo280 450 mV
Temp. Coefficient of VoEA = 1 klx TKVo –2 mV/K
Short Circuit Current EA = 1 klx Ik4.5 9
m
A
Temp. Coefficient of IkEA = 1 klx TKlk –0.05 %/K
Reverse Light Current EA = 1 klx, VR = 5 V Ira 4.5 9
m
A
Sensitivity VR=5V, EA=10–2...105 lx S 9 nA/lx
Angle of Half Sensitivity ϕ±50 deg
Wavelength of Peak Sensitivity
l
p565 nm
Range of Spectral Bandwidth
l
0.5 420...675 nm
Rise Time VR=0V, R L=1k
W
,
l
=660nm tr3.1
m
s
Fall Time VR=0V, R L=1k
W
,
l
=660nm tf3.0
m
s
BPW21R
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96 3 (5)
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
40 60 80 120
10020
I – Reverse Dark Current ( nA )
ro
Tamb – Ambient Temperature ( °C )94 8468
100
101
102
103
104
VR=5V
Figure 1. Reverse Dark Current vs. Ambient Temperature
020406080
0.8
0.9
1.0
1.1
1.3
120
1.2
100
I – Relative Reverse Light Current
ra rel
Tamb – Ambient Temperature ( °C )94 8738
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
I – Short Circuit Current ( A )
k
EA – Illuminance ( lx )94 8476
100
10–2 10–1 101102103104
100
10–1
10–2
10–3
10–4
101
102
m
Figure 3. Short Circuit Current vs. Illuminance
0
400
600
800
1200
1400
1000
200
0.1 1 10
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
100
94 8473
E=0
f=1MHz
Figure 4. Diode Capacitance vs. Reverse Voltage
350 450 550 650
0
0.2
0.4
0.6
0.8
1.0
750
94 8477
S ( ) – Relative Spectral Sensitivity
rel
l
– Wavelength ( nm )
l
V
l
Eye
Figure 5. Relative Spectral Sensitivity vs. Wavelength
0.4 0.2 0 0.2 0.4
S – Relative Sensitivity
rel
0.6
94 8475
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
Figure 6. Relative Radiant Sensitivity vs.
Angular Displacment
BPW21R
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
4 (5)
Dimensions in mm
96 12181
BPW21R
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96 5 (5)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
