MJE700 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 ! !

!#  "

  !

. . . designed for general–purpose amplifier and low–speed switching applications.

•High DC Current Gain —

hFE = 2000 (Typ) @ IC = 2.0 Adc

•Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage

Multiplication

•Choice of Packages —

MJE700 and MJE800 series

T0220AB, MJE700T and MJE800T

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

MJE700,T

MJE800,T

ÎÎÎÎ

MJE702

MJE703

MJE802

MJE803

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

4.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

0.1

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎ

CASE 77

ÎÎÎÎ

TO–220

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎ

0.32

ÎÎÎÎ

0.40

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–55 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

CASE 77

TO–220

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

3.13

2.50

ÎÎÎ

C/W

TC, CASE TEMPERATURE (

050 125 150

PD, POWER DISSIPATION (WATTS)

TO–220AB

Figure 1. Power Derating

75 100

TO–126



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE700/D

 Motorola, Inc. 1995













4.0 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

40 WATT

50 WATT





CASE 77–08

TO–225AA TYPE

MJE700–703

MJE800–803

CASE 221A–06

TO–220AB

MJE700T

MJE800T

REV 3

     

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage (1) MJE700,T, MJE800,T

(IC = 50 mAdc, IB = 0) MJE702, MJE703, MJE802, MJE803

ÎÎÎÎ

V(BR)CEO

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) MJE700,T, MJE800,T

(VCE = 80 Vdc, IB = 0) MJE702, MJE703, MJE802, MJE803

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCB = Rated BVCEO, IE = 0)

Collector Cutoff Current (VCB = Rated BVCEO, IE = 0, TC = 100

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

100

500

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 1.5 Adc, VCE = 3.0 Vdc) MJE700,T, MJE702, MJE800,T, MJE802

(IC = 2.0 Adc, VCE = 3.0 Vdc) MJE703, MJE803

(IC = 4.0 Adc, VCE = 3.0 Vdc) All devices

ÎÎÎÎ

hFE

ÎÎÎÎ

750

100

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 1.5 Adc, IB = 30 mAdc) MJE700,T, MJE702, MJE800,T, MJE802

(IC = 2.0 Adc, IB = 40 mAdc) MJE703, MJE803

(IC = 4.0 Adc, IB = 40 mAdc) All devices

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

2.8

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (1)

(IC = 1.5 Adc, VCE = 3.0 Vdc) MJE700,T, MJE702, MJE800,T, MJE802

(IC = 2.0 Adc, VCE = 3.0 Vdc) MJE703, MJE803

(IC = 4.0 Adc, VCE = 3.0 Vdc) All devices

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

1.0

ÎÎÎÎ

—

ÎÎÎ

—

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

0.04 0.2 2.00.1

0.06 0.4 1.0

4.0

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

2.0

1.0

0.8

0.6

0.4

0.2

Figure 2. Switching Times Test Circuit

td @ VBE(off) = 0

PNP

NPN 4.00.6

Figure 3. Switching Times

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.05 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

JC(t) = r(t) R

JC = 2.50

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.1 0.50.2

0.02

Figure 4. Thermal Response (MJE700T, 800T Series)

APPROX

+8.0 V

≈

6.0 k

SCOPE

VCC

–30 V

For td and tr, D1 id disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

+ 4.0 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

APPROX

–12 V

TUT

≈

150

VCC = 30 V

IC/IB = 250 IB1 = IB2

TJ = 25

     

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.05 1.0 2.0 5.0 10 20 50 100 200 1000500

JC(t) = r(t)

JC = 3.12

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.1 0.50.2

Figure 5. Thermal Response (MJE700, 800 Series)

0.03 3.0 30 3000.3

(NORMALIZED)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1 100

2.0

5.0

0.5

Figure 6. MJE700 Series

MJE702, 703

MJE700

1.0

3.0

1.0 ms

70503020107.05.0

100

TJ = 150

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1

Figure 7. MJE800 Series

IC, COLLECTOR CURRENT (AMP)

10070503020107.05.0

0.2

0.7

0.3

7.0 10

2.0

5.0

0.5

1.0

3.0

0.2

0.7

0.3

7.0

5.0 ms

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25

C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

100

1.0 ms

5.0 ms

TJ = 150

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25

C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

MJE802, 803

MJE800

ACTIVE–REGION SAFE–OPERATING AREA

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figures 6 and 7 are based on TJ(pk) = 150

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

C. TJ(pk) may be calculated from the data in Figure 4

or 5. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1

1.0

5.0

0.2

Figure 8. MJE700T

0.5

2.0

5.0

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1

Figure 9. MJE800T

IC, COLLECTOR CURRENT (AMP)

10070503020107.0 5.0 10070503020107.0

1.0

5.0

0.2

0.5

2.0

100

1.0 ms

5.0 ms

TJ = 150

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25

C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

100

1.0 ms

5.0 ms

TJ = 150

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25

C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

     

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)

PNP

MJE700, T Series NPN

MJE800, T Series

Figure 10. DC Current Gain

Figure 11. Collector Saturation Region

Figure 12. “On” Voltages

0.04 IC, COLLECTOR CURRENT (AMP)

300 0.06 0.2

2.0 k

800

4.0 k

hFE, DC CURRENT GAIN

VCE = 3.0 V

TJ = 125

3.0 k

0.1 0.6

–55

1.0 k

0.4 1.0

6.0 k

400

600

2.0 4.0 0.04

300 0.06 0.2

2.0 k

800

4.0 k

hFE, DC CURRENT GAIN

3.0 k

0.1 0.6

1.0 k

0.4 1.0

6.0 k

400

600

2.0 4.0

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.60.1 0.2 0.5 102.0 5.0

IC =

0.5 A 1.0 A

1.0

TJ = 25

3.0

1.0

0.04 IC, COLLECTOR CURRENT (AMP)

1.4

1.0

V, VOLTAGE (VOLTS)

2.2

1.8

0.6

0.2 0.06 0.2 2.00.1 0.60.4 1.0 4.0 0.04 IC, COLLECTOR CURRENT (AMP)

1.4

1.0

V, VOLTAGE (VOLTS)

2.2

1.8

0.6

0.2 0.06 0.2 2.00.1 0.60.4 1.0 4.0

20 50 100

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1 0.2 0.5 102.0 5.01.0

3.0

1.0

20 50 100

VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

2.0 A 4.0 A

TJ = 25

VCE = 3.0 V

TJ = 125

–55

IC =

0.5 A 1.0 A

TJ = 25

2.0 A 4.0 A

VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

TJ = 25

     

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

     

6 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS — CONTINUED

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

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MJE700/D

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