June 2016
DocID027716 Rev 2
1/15
This is information on a product in full production.
www.st.com
STP3LN80K5, STU3LN80K5
N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5
Power MOSFET in TO-220 and IPAK packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
V DS
RDS(on) max
ID
STP3LN80K5
800 V
3.25 Ω
2 A
STU3LN80K5
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFET are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order code
Marking
Package
Packing
STP3LN80K5
3LN80K5
TO-220
Tube
STU3LN80K5
IPAK
3
2
1
TAB
IPAK
123
TAB
TO-220
D(2, TAB)
G(1)
S(3) AM01476v1
Contents
STP3LN80K5, STU3LN80K5
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DocID027716 Rev 2
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1 IPAK package information ............................................................... 10
4.2 TO-220 type A package information ................................................ 12
5 Revision history ............................................................................ 14
STP3LN80K5, STU3LN80K5
Electrical ratings
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3/15
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
2
A
ID
Drain current (continuous) at TC = 100 °C
1.25
A
ID(1)
Drain current (pulsed)
8
A
PTOT
Total dissipation at TC = 25 °C
45
W
dv/dt (2)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt (3)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature range
- 55 to 150
°C
Tj
Operating junction temperature range
Notes:
(1)Pulse width limited by safe operating area.
(2)ISD ≤ 2 A, di/dt ≤ 100 A/µs; VDSpeak < V(BR)DSS, VDD = 640 V.
(3)VDS ≤ 640 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
TO-220
IPAK
Rthj-case
Thermal resistance junction-case
2.78
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
100
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
0.7
A
EAS
Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD = 50 V)
155
mJ
Electrical characteristics
STP3LN80K5, STU3LN80K5
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DocID027716 Rev 2
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5: On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0 V
800
V
IDSS
Zero gate voltage
drain current
VDS = 800 V, VGS = 0 V
1
µA
VDS = 800 V, VGS = 0 V,
TC = 125 °C(1)
50
µA
IGSS
Gate body leakage
current
VGS = ± 20 V, VGS = 0 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 1 A
2.75
3.25
Ω
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
102
-
pF
Coss
Output capacitance
-
11
-
pF
Crss
Reverse transfer capacitance
-
0.1
-
pF
Cotr(1)
Equivalent capacitance time
related
VDS = 0 to 640 V, VGS = 0 V
-
20
-
pF
Coer(2)
Equivalent capacitance
energy related
-
7
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
12
-
Ω
Qg
Total gate charge
VDD = 640 V, ID = 2 A,
VGS = 10 V ( see Figure 17:
"Test circuit for gate charge
behavior" )
-
2.63
-
nC
Qgs
Gate-source charge
-
0.91
-
nC
Qgd
Gate-drain charge
-
1.53
-
nC
Notes:
(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
(2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS
increases from 0 to 80% VDSS
STP3LN80K5, STU3LN80K5
Electrical characteristics
DocID027716 Rev 2
5/15
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 400 V, ID = 1 A, RG = 4.7 Ω,
VGS = 10 V ( see Figure 16: "Test
circuit for resistive load switching
times" and Figure 21: "Switching
time waveform" )
-
6.2
-
ns
tr
Rise time
-
7
-
ns
td(off)
Turn-off delay time
-
30
-
ns
tf
Fall time
-
26
-
ns
Table 8: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
2
A
ISDM(1)
Source-drain current
(pulsed)
-
8
A
VSD(2)
Forward on voltage
ISD = 2 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
ISD = 2 A, di/dt = 100 A/µs,
VDD = 60 V ( see Figure 18: "Test
circuit for inductive load switching
and diode recovery times" )
-
210
ns
Qrr
Reverse recovery
charge
-
0.8
µC
IRRM
Reverse recovery
current
-
7.6
A
trr
Reverse recovery time
ISD = 2 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C, (see
Figure 18: "Test circuit for
inductive load switching and diode
recovery times" )
-
345
ns
Qrr
Reverse recovery
charge
-
1.2
µC
IRRM
Reverse recovery
current
-
7.2
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ± 1 mA, ID = 0 A
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
Electrical characteristics
STP3LN80K5, STU3LN80K5
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DocID027716 Rev 2
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for TO-220
Figure 3: Thermal impedance for TO-220
Figure 4: Safe operating area for IPAK
Figure 5: Thermal impedance for IPAK
Figure 6: Output characteristics
Figure 7: Transfer characteristics
KCG34360
c
10-4 10-3 10-2 10-1 tp (s)
10-5
10-1
10-2
100
STP3LN80K5, STU3LN80K5
Electrical characteristics
DocID027716 Rev 2
7/15
Figure 8: Gate charge vs gate-source voltage
Figure 9: Static drain-source on-resistance
Figure 10: Capacitance variations
Figure 11: Source-drain diode forward
characteristics
Figure 12: Normalized gate threshold
voltage vs temperature
Figure 13: Normalized on-resistance vs
temperature
Electrical characteristics
STP3LN80K5, STU3LN80K5
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DocID027716 Rev 2
Figure 14: Normalized V(BR)DSS vs
temperature
Figure 15: Maximum avalanche energy vs
starting TJ
STP3LN80K5, STU3LN80K5
Test circuits
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9/15
3 Test circuits
Figure 16: Test circuit for resistive load
switching times
Figure 17: Test circuit for gate charge
behavior
Figure 18: Test circuit for inductive load
switching and diode recovery times
Figure 19: Unclamped inductive load test
circuit
Figure 20: Unclamped inductive waveform
Figure 21: Switching time waveform
AM01469v10
47 kΩ
2.7 kΩ
1 kΩ
IG= CONST 100 Ω D.U.T.
+
pulse width
VGS
2200
μF
VG
VDD
RL
Package information
STP3LN80K5, STU3LN80K5
10/15
DocID027716 Rev 2
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 IPAK package information
Figure 22: IPAK (TO-251) type A package outline
STP3LN80K5, STU3LN80K5
Package information
DocID027716 Rev 2
11/15
Table 10: IPAK (TO-251) type A package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
0.95
b4
5.20
5.40
B5
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
2.28
e1
4.40
4.60
H
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
1.00
V1
10°
Package information
STP3LN80K5, STU3LN80K5
12/15
DocID027716 Rev 2
4.2 TO-220 type A package information
Figure 23: TO-220 type A package outline
STP3LN80K5, STU3LN80K5
Package information
DocID027716 Rev 2
13/15
Table 11: TO-220 type A mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
Revision history
STP3LN80K5, STU3LN80K5
14/15
DocID027716 Rev 2
5 Revision history
Table 12: Document revision history
Date
Revision
Changes
09-Jul-2015
1
Initial release
28-Jun-2016
2
Updated title and features in cover page.
Updated Section 1: "Electrical ratings".
Updated Section 2: "Electrical characteristics".
Added Section 2.1: "Electrical characteristics (curves)".
Document status promoted from preliminary to production data.
Minor text changes.
STP3LN80K5, STU3LN80K5
DocID027716 Rev 2
15/15
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